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Kenji Watanabe

Researcher at National Institute for Materials Science

Publications -  2949
Citations -  182262

Kenji Watanabe is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 167, co-authored 2359 publications receiving 129337 citations. Previous affiliations of Kenji Watanabe include Tohoku University & National Institutes of Natural Sciences, Japan.

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Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
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Unconventional superconductivity in magic-angle graphene superlattices

TL;DR: The realization of intrinsic unconventional superconductivity is reported—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle.
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Correlated insulator behaviour at half-filling in magic-angle graphene superlattices

TL;DR: It is shown experimentally that when this angle is close to the ‘magic’ angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling, and these flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons.
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One-dimensional electrical contact to a two-dimensional material.

TL;DR: In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.
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Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

TL;DR: HBN is shown to be a promising material for compact ultraviolet laser devices because it has a direct bandgap in the ultraviolet region and evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided.