Systems and methods for implementing array cameras configured to perform super- resolution processing to generate higher resolution super-resolved images using a plurality of captured images and lens stack arrays that can be utilized in array cameras are disclosed. Lens stack arrays in accordance with many embodiments of the invention include lens elements formed on substrates separated by spacers, where the lens elements, substrates and spacers are configured to form a plurality of optical channels, at least one aperture located within each optical channel, at least one spectral filter located within each optical channel, where each spectral filter is configured to pass a specific spectral band of light, and light blocking materials located within the lens stack array to optically isolate the optical channels.

Capturing and processing of images using monolithic camera array with heterogeneous imagers

The theory of image formation is formulated in terms of the coherence function in the object plane, the diffraction distribution function of the image-forming system and a function describing the structure of the object. There results a four-fold integral involving these functions, and the complex conjugate functions of the latter two. This integral is evaluated in terms of the Fourier transforms of the coherence function, the diffraction distribution function and its complex conjugate. In fact, these transforms are respectively the distribution of intensity in an 'effective source', and the complex transmission of the optical system-they are the data initially known and are generally of simple form. A generalized 'transmission factor' is found which reduces to the known results in the simple cases of perfect coherence and complete incoherence. The procedure may be varied in a manner more suited to non-periodic objects. The theory is applied to study inter alia the influence of the method of illumination on the images of simple periodic structures and of an isolated line.

On the diffraction theory of optical images

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

Apparatus and method for immersion lithography

A catadioptric projection objective for projecting a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, having: a first objective part for projecting an object field lying in the object plane into a first real intermediate image; a second objective part for generating a second real intermediate image with the radiation coming from the first objective part; a third objective part for generating a third real intermediate image with the radiation coming from the second objective part; and a fourth objective part for projecting the third real intermediate image into the image plane.

Catadioptric Projection Objective

There is provided an exposure method that includes the steps of forming a phase shift mask having a desired pattern and a cyclic dummy pattern overlaid onto the desired pattern, a part of the desired pattern to be resolved by effects of the dummy pattern being thicker than the dummy pattern's line width, illuminating the phase shift mask by using illumination light having a peak near or on an optical axis in an intensity distribution to transfer the desired pattern onto the exposure plane by projecting light having passed through the phase shift mask onto the exposure plane.

Exposure method and apparatus

A newly developed sub-resolution assist feature (SRAF) placement technique with two-dimensional
transmission cross coefficient (2D-TCC) is described in this paper. In SRAF placement with 2D-TCC, Hopkins'
aerial image equation with four-dimensional TCC is decomposed into the sum of Fourier transforms of diffracted
light weighted by 2D-TCC, introducing an approximated aerial image so as to place SRAFs into a given reticle
layout. SRAFs are placed at peak positions of the approximated aerial image for enhanced resolution. Since the
approximated aerial image can handle the full optical model, SRAFs can be automatically optimized to the given
optical condition to generate the optimized reticle. The validity of this technique was confirmed by experiment
using a Canon FPA6000-ES6a, 248 nm with a numerical aperture (NA) of 0.86. A binary reticle optimized by this
technique with mild off-axis illumination was used in the experiment. Both isolated and dense 100 nm contacts (k 1 
= 0.35) were simultaneously resolved with the aid of this technique.

Resolution enhancement by aerial image approximation with 2D-TCC

In this paper, a new resolution enhancement technique named 2D-TCC technique is proposed. This method can enhance resolution of line patterns as well as that of contact hole patterns by the use of an approximate aerial image. The aerial image, which is obtained by 2D-TCC calculation, expresses the degree of coherence at the image plane of a projection optic considering mask transmission at the object plane. OPC of desired patterns and placement of assist patterns can be simultaneously performed according to an approximate aerial image called a 2D-TCC map. Fast calculation due to truncation of a series in calculating an aerial image is another advantage. Results of mask optimization for various line patterns and the validity of the 2D-TCC technique by simulations and experiments are reported.

Mask optimization for arbitrary patterns with 2D-TCC resolution enhancement technique

The extendibility of 2D-TCC technique to an isolated line of 45 nm width is investigated in this paper. The 2D-TCC
technique optimizes mask patterns placing assist pattern automatically. For 45 nm line patterns, the assist pattern width
generally becomes much smaller than the exposure wavelength of 193 nm. Thus, the impact of the topography of a mask
is examined using an electro-magnetic field (EMF) simulation. This simulation indicates that unwanted assist pattern
printings are brought about by assist patterns with a smaller size than expected by the Kirchhoff's approximation. The
difference, however, can be easily solved by giving a bias to the main pattern in the optimized mask. The main pattern
bias decreases DOF very little. Furthermore, DOF simulated with a thick mask model is roughly the same as that
simulated with a thin mask model. Therefore the topography of the optimized mask does not have an influence on the
assist pattern position of the optimized mask. From these results, we have confirmed that the 2D-TCC technique can be
extended to the optimization of 45 nm line patterns. As one of the notable features, the optimized aperiodic assist pattern
greatly reduces MEEF compared with the conventional periodic assist pattern. To verify the feasibility of the 2D-TCC
technique for 45 nm line, we performed experiment with an optimized mask. Experimental results showed that DOF
increased with the number of assist pattern as simulation indicated. In addition, a defect whose length was twice that of
the assist pattern did not have an influence on CD. From these results we have confirmed that the 2D-TCC technique can
enhance the resolution of 45 nm line and has practical feasibility.

Extension of the 2D-TCC technique to optimize mask pattern layouts

A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system includes the steps of forming data for the predetermined pattern, forming data for the auxiliary pattern, and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.

Kenji Yamazoe

Papers

Exposure method and apparatus

Resolution enhancement by aerial image approximation with 2D-TCC

Mask optimization for arbitrary patterns with 2D-TCC resolution enhancement technique

Extension of the 2D-TCC technique to optimize mask pattern layouts

Method for setting mask pattern and its illumination condition