K
Kenneth A. Jones
Researcher at United States Army Research Laboratory
Publications - 183
Citations - 3441
Kenneth A. Jones is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Ohmic contact & Annealing (metallurgy). The author has an hindex of 23, co-authored 183 publications receiving 2952 citations. Previous affiliations of Kenneth A. Jones include University of Maryland, College Park.
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
R. D. Vispute,V. Talyansky,Supab Choopun,R. P. Sharma,Thirumalai Venkatesan,Maoqi He,Xiaohui Tang,Joshua B. Halpern,Michael G. Spencer,Y. X. Li,Lourdes Salamanca-Riba,Agis A. Iliadis,Kenneth A. Jones +12 more
TL;DR: In this paper, high-resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface and lattice matched epitaxy.
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High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides
R. D. Vispute,V. Talyansky,Z. Trajanovic,Supab Choopun,M. Downes,R. P. Sharma,T. Venkatesan,M. C. Woods,R. T. Lareau,Kenneth A. Jones,Agis A. Iliadis +10 more
TL;DR: In this paper, it has been shown that it is possible to grow epitaxial AlN films of thickness 1000 A on epi-ZnO/sapphire.
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Deposition factors and band gap of zinc-blende AlN
Margarita P. Thompson,Gregory W. Auner,Tsvetanka Zheleva,Kenneth A. Jones,Steven J. Simko,James N. Hilfiker +5 more
TL;DR: The formation of a thin 3C-SiC layer on the Si(001) surface is one of the important factors for the formation of zinc-blende AlN.
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Growth of epitaxial GaN films by pulsed laser deposition
R. D. Vispute,V. Talyansky,R. P. Sharma,Supab Choopun,M. Downes,T. Venkatesan,Kenneth A. Jones,Agis A. Iliadis,M. Asif Khan,J. W. Yang +9 more
TL;DR: In this article, high crystalline quality epitaxial GaN films with thicknesses 0.5-1.5 μm have been successfully grown directly on Al2O3(0001) substrate by pulsed laser deposition (PLD).