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Kenneth B. K. Teo

Researcher at University of Cambridge

Publications -  124
Citations -  8455

Kenneth B. K. Teo is an academic researcher from University of Cambridge. The author has contributed to research in topics: Carbon nanotube & Field electron emission. The author has an hindex of 41, co-authored 123 publications receiving 7971 citations. Previous affiliations of Kenneth B. K. Teo include Massachusetts Institute of Technology.

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Superhydrophobic Carbon Nanotube Forests

TL;DR: In this paper, the creation of a stable, superhydrophobic surface using the nanoscale roughness inherent in a vertically aligned carbon nanotube forest together with a thin conformal hydrophobic poly(tetrafluoroethylene) (PTFE) coating on the surface of the nanotubes was demonstrated.
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Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition

TL;DR: In this paper, the growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system was reported, and the growth properties were studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure.
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Microwave devices: carbon nanotubes as cold cathodes.

TL;DR: A microwave diode that uses a cold-cathode electron source consisting of carbon nanotubes and that operates at high frequency and at high current densities is described.
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Carbon nanotubes as field emission sources

TL;DR: In this article, the PECVD growth process, and the microfabrication techniques needed to produce well defined carbon nanotube based micro-electron sources for use in novel parallel e-beam lithography and high frequency microwave amplifier systems are reviewed.
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Uniform patterned growth of carbon nanotubes without surface carbon

TL;DR: In this paper, the authors demonstrate a technique that enables high yield, uniform, and preferential growth of perfectly aligned carbon nanotubes by using plasma-enhanced chemical-vapor deposition (PECVD).