Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Methods and systems for utilizing design data in combination with inspection data

A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment system for initially aligning the substrate beneath the charged particle beam. To function most efficiently there is also a vacuum system for evacuating and repressurizing a chamber containing the substrate. The vacuum system can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum system can simultaneously evacuate a plurality of substrates prior to inspection and repressurize the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison system for comparing the pattern on the substrate with a second pattern.

Electron beam inspection system and method

Methods and systems for determining a critical dimension and overlay of a specimen

A laser imaging system is used to analyze defects on semiconductor wafers that have been detected by patterned wafer defect detecting systems (wafer scanners). The laser imaging system replaces optical microscope review stations now utilized in the semiconductor fab environment to examine detected optical anomalies that may represent wafer defects. In addition to analyzing defects, the laser imaging system can perform a variety of microscopic inspection functions including defect detection and metrology. The laser imaging system uses confocal laser scanning microscopy techniques, and operates under class 1 cleanroom conditions and without exposure of the wafers to operator contamination or airflow. Unlike scanning electron microscopes (SEMs) that have previously been used for defect analysis, the laser imaging system will not damage samples or slow processing, costs significantly less to implement than an SEM, can produce a three dimensional image which provides quantitative dimensional information, and allows sub-surface viewing of defects lying beneath dielectric layers. The laser imaging system is adaptable to cluster or in-situ applications, where examination of defects or structures during on-line processing can be performed.

Laser imaging system for inspection and analysis of sub-micron particles

A method for inspecting lithography masks includes generating integrated circuit design data and using context information from the integrated circuit design data to inspect a mask.

Method and system for context-specific mask inspection

Optical inspection apparatus for detecting differences between two dies in a photomask and including a carriage for supporting the objects to be inspected and for simultaneously moving such objects along an inspection path, an illuminator for illuminating corresponding portions of the objects as they are moved along the inspection path, electro-optical detectors for individually inspecting the illuminated portions and for developing first and second electrical signals respectively corresponding thereto, electronic memories for storing the first and second electrical signals, a computer for scanning the memories and for electronically aligning a readout of the first signal relative to a readout of the second signal, and a comparator for comparing the electronically aligned signals and for indicating any differences therebetween.

Automatic photomask inspection system and apparatus

A system for automatic micro and macro inspection of patterned wafers, including a X-Y stage for supporting and positioning a wafer at a macro inspection station and a micro inspection station, a plurality of cassettes for storing a plurality of patterned wafers before and after inspection, a transfer arm and apparatus for transferring a wafer from the cassettes to a predetermined location on the X-Y stage, apparatus for centering the wafer on the macro inspection station, apparatus for aligning the wafer to obtain a preselected orientation for macro inspection, an optical system for effecting macro inspection of the wafer and storing a unique image thereof, apparatus for moving the wafer from the macro inspection station to the micro inspection station so that the area of the wafer corresponding to the stored unique image is in a micro optical path, autofocus apparatus for automatically focusing the lowest magnification objective lens on the area of the wafer to derive a real time image, a comparitor for comparing the stored unique image to the real time image, apparatus responsive to the comparison of the stored unique image and the real time image and operative to more precisely position the wafer in the micro optical path, apparatus for using areas of the wafer displaced one from the other to obtain more precise alignment of the wafer, apparatus for performing a pre-established micro inspection of selected areas of the wafer and apparatus for returning the wafer to a storage cassette.

Kenneth Levy

Papers

Automatic photomask inspection system and apparatus

Electronic control of an automatic wafer inspection system