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Kevin P. Pipe

Bio: Kevin P. Pipe is an academic researcher from University of Michigan. The author has contributed to research in topics: Semiconductor laser theory & Thermoelectric effect. The author has an hindex of 31, co-authored 116 publications receiving 4857 citations. Previous affiliations of Kevin P. Pipe include University of Pennsylvania & Massachusetts Institute of Technology.


Papers
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Journal ArticleDOI
TL;DR: Reducing dopant volume is found to be as important as optimizing carrier concentration when maximizing ZT in OSCs, and this stands in sharp contrast to ISCs, for which these parameters have trade-offs.
Abstract: The conversion efficiency of heat to electricity in thermoelectric materials depends on both their thermopower and electrical conductivity. It is now reported that, unlike their inorganic counterparts, organic thermoelectric materials show an improvement in both these parameters when the volume of dopant elements is minimized; furthermore, a high conversion efficiency is achieved in PEDOT:PSS blends.

1,366 citations

Journal ArticleDOI
TL;DR: It is shown that a blend of two polymers with high miscibility and appropriately chosen linker structure can yield a dense and homogeneously distributed thermal network.
Abstract: A high density of strong hydrogen bonds connecting two polymers that are homogeneously mixed in a thin film is shown to enhance the intrachain thermal conductance, boosting thermal transport in fully organic layers. Thermal conductivity is an important property for polymers, as it often affects product reliability (for example, electronics packaging), functionality (for example, thermal interface materials) and/or manufacturing cost1. However, polymer thermal conductivities primarily fall within a relatively narrow range (0.1–0.5 W m−1 K−1) and are largely unexplored. Here, we show that a blend of two polymers with high miscibility and appropriately chosen linker structure can yield a dense and homogeneously distributed thermal network. A sharp increase in cross-plane thermal conductivity is observed under these conditions, reaching over 1.5 W m−1 K−1 in typical spin-cast polymer blend films of nanoscale thickness, which is approximately an order of magnitude larger than that of other amorphous polymers.

424 citations

Journal ArticleDOI
TL;DR: A general design rule and a method to effectively reduce radiationless transitions and hence greatly enhance phosphorescence efficiency of metal-free organic materials in a variety of amorphous polymer matrices is presented, based on the restriction of molecular motions in the proximity of embedded phosphors.
Abstract: Metal-free organic phosphorescent materials are attractive alternatives to the predominantly used organometallic phosphors but are generally dimmer and are relatively rare, as, without heavy-metal atoms, spin-orbit coupling is less efficient and phosphorescence usually cannot compete with radiationless relaxation processes. Here we present a general design rule and a method to effectively reduce radiationless transitions and hence greatly enhance phosphorescence efficiency of metal-free organic materials in a variety of amorphous polymer matrices, based on the restriction of molecular motions in the proximity of embedded phosphors. Covalent cross-linking between phosphors and polymer matrices via Diels-Alder click chemistry is devised as a method. A sharp increase in phosphorescence quantum efficiency is observed in a variety of polymer matrices with this method, which is ca. two to five times higher than that of phosphor-doped polymer systems having no such covalent linkage.

306 citations

Journal ArticleDOI
TL;DR: In this article, the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermography in various devices.
Abstract: CCD-based thermoreflectance microscopy has emerged as a high resolution, non-contact imaging technique for thermal profiling and performance and reliability analysis of numerous electronic and optoelectronic devices at the micro-scale. This thermography technique, which is based on measuring the relative change in reflectivity of the device surface as a function of change in temperature, provides high-resolution thermal images that are useful for hot spot detection and failure analysis, mapping of temperature distribution, measurement of thermal transient, optical characterization of photonic devices and measurement of thermal conductivity in thin films. In this paper we review the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermoreflectance microscopy in various devices.

223 citations

Journal ArticleDOI
TL;DR: In this article, a planar heterojunction (PHJ) and bulk heter-junction organic photovoltaic (OPV) cells were investigated using transparent electrodes composed of ultrathin, unpatterned metal films.
Abstract: Transparent electrodes composed of ultrathin, unpatterned metal films are investigated in planar heterojunction (PHJ) and bulk heterojunction organic photovoltaic (OPV) cells. Optimal electrode composition and thickness are deduced from electrical and optical models and experiments, enabling a PHJ-OPV cell to be realized using a silver anode, achieving power conversion efficiency parity with an analogous cell that uses an indium tin oxide anode. Beneficial aspects of smooth, unpatterned metal films as transparent electrodes in OPV cells are also discussed in the text.

221 citations


Cited by
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01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

29,323 citations

Journal ArticleDOI
Wei Zeng1, Lin Shu1, Qiao Li1, Song Chen1, Fei Wang1, Xiaoming Tao1 
TL;DR: This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products.
Abstract: Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption

1,626 citations

Journal ArticleDOI
24 Jun 2009-ACS Nano
TL;DR: These nanowire films are electromechanically very robust, with all but the thinnest films showing no change in sheet resistance when flexed over >1000 cycles, which makes these films ideal as replacements for indium tin oxide as transparent electrodes.
Abstract: We have used aqueous dispersions of silver nanowires to prepare thin, flexible, transparent, conducting films. The nanowires are of length and diameter close to 6.5 μm and 85 nm, respectively. At low thickness, the films consist of networks but appear to become bulk-like for mean film thicknesses above ∼160 nm. These films can be very transparent with optical transmittance reaching as high as 92% for low thickness. The transmittance (550 nm) decreases with increasing thickness, consistent with an optical conductivity of 6472 S/m. The films are also very uniform; the transmittance varies spatially by typically <2%. The sheet resistance decreases with increasing thickness, falling below 1 Ω/◻ for thicknesses above 300 nm. The DC conductivity increases from 2 × 105 S/m for very thin films before saturating at 5 × 106 S/m for thicker films. Similarly, the ratio of DC to optical conductivity increases with increasing thickness from 25 for the thinnest films, saturating at ∼500 for thicknesses above ∼160 nm. We...

1,530 citations

Journal Article
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Abstract: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications

1,479 citations

Journal ArticleDOI
29 Sep 2017-Science
TL;DR: The mechanisms and strategies for improving thermoelectric efficiency are reviewed and how to report material performance is discussed, as well as how to develop high-performance materials out of nontoxic and earth-abundant elements.
Abstract: BACKGROUND Heat and electricity are two forms of energy that are at opposite ends of a spectrum Heat is ubiquitous, but with low quality, whereas electricity is versatile, but its production is demanding Thermoelectrics offers a simple and environmentally friendly solution for direct heat-to-electricity conversion A thermoelectric (TE) device can directly convert heat emanating from the Sun, radioisotopes, automobiles, industrial sectors, or even the human body to electricity Electricity also can drive a TE device to work as a solid-state heat pump for distributed spot-size refrigeration TE devices are free of moving parts and feasible for miniaturization, run quietly, and do not emit greenhouse gasses The full potential of TE devices may be unleashed by working in tandem with other energy-conversion technologies Thermoelectrics found niche applications in the 20th century, especially where efficiency was of a lower priority than energy availability and reliability Broader (beyond niche) application of thermoelectrics in the 21st century requires developing higher-performance materials The figure of merit, ZT, is the primary measure of material performance Enhancing the ZT requires optimizing the adversely interdependent electrical resistivity, Seebeck coefficient, and thermal conductivity, as a group On the microscopic level, high material performance stems from a delicate concert among trade-offs between phase stability and instability, structural order and disorder, bond covalency and ionicity, band convergence and splitting, itinerant and localized electronic states, and carrier mobility and effective mass ADVANCES Innovative transport mechanisms are the fountain of youth of TE materials research In the past two decades, many potentially paradigm-changing mechanisms were identified, eg, resonant levels, modulation doping, band convergence, classical and quantum size effects, anharmonicity, the Rashba effect, the spin Seebeck effect, and topological states These mechanisms embody the current states of understanding and manipulating the interplay among the charge, lattice, orbital, and spin degrees of freedom in TE materials Many strategies were successfully implemented in a wide range of materials, eg, V2VI3 compounds, VVI compounds, filled skutterudites and clathrates, half-Heusler alloys, diamond-like structured compounds, Zintl phases, oxides and mixed-anion oxides, silicides, transition metal chalcogenides, and organic materials In addition, advanced material synthesis and processing techniques, for example, melt spinning, self-sustaining heating synthesis, and field-assisted sintering, helped reach a much broader phase space where traditional metallurgy and melt-growth recipes fell short Given the ubiquity of heat and the modular aspects of TE devices, these advances ensure that thermoelectrics plays an important role as part of a solutions package to address our global energy needs OUTLOOK The emerging roles of spin and orbital states, new breakthroughs in multiscale defect engineering, and controlled anharmonicity may hold the key to developing next generation TE materials To accelerate exploring the broad phase space of higher multinary compounds, we need a synergy of theory, machine learning, three-dimensional printing, and fast experimental characterizations We expect this synergy to help refine current materials selection and make TE materials research more data driven We also expect increasing efforts to develop high-performance materials out of nontoxic and earth-abundant elements The desire to move away from Freon and other refrigerant-based cooling should shift TE materials research from power generation to solid-state refrigeration International round-robin measurements to cross-check the high ZT values of emerging materials will help identify those that hold the most promise We hope the renewable energy landscape will be reshaped if the recent trend of progress continues into the foreseeable future

1,457 citations