An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A method of making a thin film transistor comprises (a) solution depositing a dispersion comprising semiconducting metal oxide nanoparticles onto a substrate, (b) sintering the nanoparticles to form a semiconductor layer, and (c) optionally subjecting the resulting semiconductor layer to post-deposition processing.

Method for making electronic devices using metal oxide nanoparticles

A method, comprising: depositing (142) a first material over at least a portion of a substrate (102) by use of one or more solution processes to form a first material layer (108), at least a portion of said first material layer (108) comprising inorganic dielectric material; depositing (146) a second material over and/or in contact with said at least a portion of said first material layer (108) by use of one or more solution processes to form a second material layer (108), at least a portion of said second material layer (108) comprising organic dielectric material, to form at least a portion of a dielectric device layer; and altering (144, 148) said at least a portion of said first and/or said second material layer (108) at least in part.

Method of forming a solution processed device

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Circuit modules and methods of construction thereof that contain composite meta-material dielectric bodies that have high effective values of real permittivity but which minimize reflective losses, through the use of host dielectric (organic or ceramic), materials having relative permittivities substantially less than ceramic dielectric inclusions embedded therein. The composite meta-material bodies permit reductions in physical lengths of electrically conducting elements such as antenna element(s) without adversely impacting radiation efficiency. The meta-material structure may additionally provide frequency band filtering functions that would normally be provided by other components typically found in an RF front-end.

Ceramic antenna module and methods of manufacture thereof

Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same. A flowing aerosol is generated that includes droplets of a precursor medium dispersed in a gas phase. The precursor medium contains a liquid vehicle and at least one precursor. At least a portion of the liquid vehicle is removed from the droplets of precursor medium under conditions effective to convert the precursor to the nanoparticles or the matrix and form the multi-component particles.

Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same

Precursor compositions having a low conversion temperature and methods for the fabrication of recessed electrical features from the precursor compositions. The electrical features can be conductors, resistors and dielectric features. The precursor compositions are deposited into recessed features, such as trenches, formed in a substrate and are reacted at a low temperature to form electrical features having good electrical and mechanical properties. The substrate can be a low temperature substrate, such as an organic substrate.

Methods and compositions for the formation of recessed electrical features on a substrate

A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a viscosity of at least about 1000 centipoise and can be deposited by screen printing. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver and/or copper metal for the formation of highly conductive features.

Precursor compositions for the deposition of electrically conductive features

Precursor compositions for the deposition of electronic features such as resistors and dielectric components and methods for the deposition of the precursor compositions. The precursor compositions have a low viscosity, such as not greater than about 1000 centipoise and can be deposited using a direct-write tool. The precursors also have a low conversion temperature, enabling the formation of electronic features on a wide variety of substrates, including low temperature substrates.

Precursor compositions and methods for the deposition of passive electrical components on a substrate

In a method of depositing a metal sulfide film on a substrate (7), a solution containing at least one metal compound precursor comprising at least one thiocarboxylate ligand SECR, wherein E is selected from the group consisting of O and S and wherein R is selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, halogenated alkyl, and halogenated aryl is prepared. The substrate in a substrate chamber (4) is heated to a reaction temperature by a heating means (5). The solution is evaporated to form vapors of the metal compound precursor by the use of an aerosol generator (1). The vapors and the substrate heated to the reaction temperature are contacted. The reaction temperature is sufficient to decompose the metal compound precursor to form a metal sulfide film of at least one metal on the substrate.

Klaus Kunze

Papers

Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same

Methods and compositions for the formation of recessed electrical features on a substrate

Precursor compositions for the deposition of electrically conductive features

Precursor compositions and methods for the deposition of passive electrical components on a substrate

Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodentate or multidentate ligands