Koji Takeda

Bio: Koji Takeda is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Photonic crystal & Laser. The author has an hindex of 24, co-authored 210 publications receiving 2303 citations. Previous affiliations of Koji Takeda include University of Tokyo.

Large-scale integration of wavelength-addressable all-optical memories on a photonic crystal chip

Abstract: Large-scale densely integrated optical memory on a single photonic crystal chip is demonstrated. The wavelength-division-multiplexing (WDM) capabilities of nanophotonic memories are exploited for optical addressing. This work may enable optical random-access memories and a large-scale WDM photonic network-on-chip.

Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers

Abstract: High-speed modulation and 4.4 fJ bit−1 data transmission is demonstrated using a photonic-crystal nanocavity laser. Its current threshold of 4.8 µA, modulation current efficiency of 2.0 GHz µA−0.5 and output power of 2.17 µW may enable on-chip photonic networks in combination with recently developed high-sensitivity receivers.

Photonic crystal lasers using wavelength-scale embedded active region

Abstract: Lasers with ultra-low operating energy are desired for use in chip-to-chip and on-chip optical interconnects. If we are to reduce the operating energy, we must reduce the active volume. Therefore, a photonic crystal (PhC) laser with a wavelength-scale cavity has attracted a lot of attention because a PhC provides a large Q-factor with a small volume. To improve this device's performance, we employ an embedded active region structure in which the wavelength-scale active region is buried with an InP PhC slab. This structure enables us to achieve effective confinement of both carriers and photons, and to improve the thermal resistance of the device. Thus, we have obtained a large external differential quantum efficiency of 55% and an output power of ?10?dBm by optical pumping. For electrical pumping, we use a lateral p?i?n structure that employs Zn diffusion and Si ion implantation for p-type and n-type doping, respectively. We have achieved room-temperature continuous-wave operation with a threshold current of 7.8??A and a maximum 3?dB bandwidth of 16.2?GHz. The results of an experimental bit error rate measurement with a 10?Gbit?s?1 NRZ signal reveal the minimum operating energy for transferring a single bit of 5.5?fJ. These results show the potential of this laser to be used for very short reach interconnects. We also describe the optimal design of cavity quality (Q) factor in terms of achieving a large output power with a low operating energy using a calculation based on rate equations. When we assume an internal absorption loss of 20?cm?1, the optimized coupling Q-factor is 2000.

Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator

Abstract: Hybrid silicon optical modulator brings efficiency benefits. Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach–Zehnder (MZ) modulators will limit further increases in transmission capacity1,2,3,4. To overcome this, we introduce III–V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage–length product (VπL), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-µm-long InGaAsP/Si metal-oxide–semiconductor (MOS) capacitor phase-shifter and obtain a VπL of 0.09 Vcm in accumulation mode, an insertion loss of ∼1.0 dB, a cutoff frequency of ∼2.2 GHz in depletion mode and a 32-Gbit s–1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.

Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

Abstract: We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.

Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals

Abstract: Control of spontaneously emitted light lies at the heart of quantum optics. It is essential for diverse applications ranging from miniature lasers and light-emitting diodes, to single-photon sources for quantum information, and to solar energy harvesting. To explore such new quantum optics applications, a suitably tailored dielectric environment is required in which the vacuum fluctuations that control spontaneous emission can be manipulated. Photonic crystals provide such an environment: they strongly modify the vacuum fluctuations, causing the decay of emitted light to be accelerated or slowed down, to reveal unusual statistics, or to be completely inhibited in the ideal case of a photonic bandgap. Here we study spontaneous emission from semiconductor quantum dots embedded in inverse opal photonic crystals. We show that the spectral distribution and time-dependent decay of light emitted from excitons confined in the quantum dots are controlled by the host photonic crystal. Modified emission is observed over large frequency bandwidths of 10%, orders of magnitude larger than reported for resonant optical microcavities. Both inhibited and enhanced decay rates are observed depending on the optical emission frequency, and they are controlled by the crystals’ lattice parameter. Our experimental results provide a basis for all-solid-state dynamic control of optical quantum systems.

Integrated all-photonic non-volatile multi-level memory

Abstract: Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy.

Integrated microwave photonics

Abstract: Recent advances in photonic integration have propelled microwave photonic technologies to new heights. The ability to interface hybrid material platforms to enhance light–matter interactions has led to the development of ultra-small and high-bandwidth electro-optic modulators, low-noise frequency synthesizers and chip signal processors with orders-of-magnitude enhanced spectral resolution. On the other hand, the maturity of high-volume semiconductor processing has finally enabled the complete integration of light sources, modulators and detectors in a single microwave photonic processor chip and has ushered the creation of a complex signal processor with multifunctionality and reconfigurability similar to electronic devices. Here, we review these recent advances and discuss the impact of these new frontiers for short- and long-term applications in communications and information processing. We also take a look at the future perspectives at the intersection of integrated microwave photonics and other fields including quantum and neuromorphic photonics. This Review discusses recent advances of microwave photonic technologies and their applications in communications and information processing, as well as their potential implementations in quantum and neuromorphic photonics.

Optical Packet and Burst Switching Technologies for the Future Photonic Internet

Abstract: This paper reviews advanced optical burst switching (OBS) and optical packet switching (OPS) technologies and discusses their roles in the future photonic Internet. Discussions include optoelectronic and optical systems technologies as well as systems integration into viable network elements (OBS and OPS routers). Optical label switching (OLS) offers a unified multiple-service platform with effective and agile utilization of the available optical bandwidth in support of voice, data, and multimedia services on the Internet Protocol. In particular, OLS routers with wavelength routing switching fabrics and parallel optical labeling allow forwarding of asynchronously arriving variable-length packets, bursts, and circuits. By exploiting contention resolution in wavelength, time, and space domains, the OLS routers can achieve high throughput without resorting to a store-and-forward method associated with large buffer requirements. Testbed demonstrations employing OLS edge routers show high-performance networking in support of multimedia and data communications applications over the photonic Internet with optical packets and bursts switched directly at the optical layer

Nanophotonics: shrinking light-based technology.

Abstract: The study of light at the nanoscale has become a vibrant field of research, as researchers now master the flow of light at length scales far below the optical wavelength, largely surpassing the classical limits imposed by diffraction. Using metallic and dielectric nanostructures precisely sculpted into two-dimensional (2D) and 3D nanoarchitectures, light can be scattered, refracted, confined, filtered, and processed in fascinating new ways that are impossible to achieve with natural materials and in conventional geometries. This control over light at the nanoscale has not only unveiled a plethora of new phenomena but has also led to a variety of relevant applications, including new venues for integrated circuitry, optical computing, solar, and medical technologies, setting high expectations for many novel discoveries in the years to come.