Showing papers by "Kostya S. Novoselov published in 2019"

Magnetic 2D materials and heterostructures.

Abstract: The family of two-dimensional (2D) materials grows day by day, hugely expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals (vdW) heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member: 2D magnets. The situation has changed over the past 2 years with the introduction of a variety of atomically thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus on the case of the two most studied systems-semiconducting CrI3 and metallic Fe3GeTe2-and illustrate the physical phenomena that have been observed. Special attention will be given to the range of new van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field.

Magnetic 2D materials and heterostructures

Abstract: The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years with the introduction of a variety of atomically-thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus, in particular, on the case of the two most studied systems - semiconducting CrI$_3$ and metallic Fe$_3$GeTe$_2$ - and illustrate the physical phenomena that have been observed. Special attention will be given to the range of novel van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field.

Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures

Abstract: Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moire superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moire superlattice can lead to the observation of electronic minibands5–7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor–insulator transition at magic twist angles8. Here, using semiconducting heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moire superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moire pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures9. Excitonic bands in MoSe2/WS2 heterostructures can hybridize, resulting in a resonant enhancement of moire superlattice effects.

Resonantly hybridised excitons in moir\'e superlattices in van der Waals heterostructures

Abstract: Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moire superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moire superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moire pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.

All Inkjet-Printed Graphene-Silver Composite Ink on Textiles for Highly Conductive Wearable Electronics Applications

Abstract: Inkjet-printed wearable electronic textiles (e-textiles) are considered to be very promising due to excellent processing and environmental benefits offered by digital fabrication technique. Inkjet-printing of conductive metallic inks such as silver (Ag) nanoparticles (NPs) are well-established and that of graphene-based inks is of great interest due to multi-functional properties of graphene. However, poor ink stability at higher graphene concentration and the cost associated with the higher Ag loading in metal inks have limited their wider use. Moreover, graphene-based e-textiles reported so far are mainly based on graphene derivatives such as graphene oxide (GO) or reduced graphene oxide (rGO), which suffers from poor electrical conductivity. Here we report inkjet printing of highly conductive and cost-effective graphene-Ag composite ink for wearable e-textiles applications. The composite inks were formulated, characterised and inkjet-printed onto PEL paper first and then sintered at 150 °C for 1 hr. The sheet resistance of the printed patterns is found to be in the range of ~0.08–4.74 Ω/sq depending on the number of print layers and the graphene-Ag ratio in the formulation. The optimised composite ink was then successfully printed onto surface pre-treated (by inkjet printing) cotton fabrics in order to produce all-inkjet-printed highly conductive and cost-effective electronic textiles.

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr 3

Abstract: Van der Waals heterostructures, which are composed of layered two-dimensional materials, offer a platform to investigate a diverse range of physical phenomena and could be of use in a variety of applications. Heterostructures containing two-dimensional ferromagnets, such as chromium triiodide (CrI3), have recently been reported, which could allow two-dimensional spintronic devices to be developed. Here we study tunnelling through thin ferromagnetic chromium tribromide (CrBr3) barriers that are sandwiched between graphene electrodes. In devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localized states. In contrast, in the devices with ferromagnetic barriers, the major tunnelling mechanisms are the emission of magnons at low temperatures and the scattering of electrons on localized magnetic excitations at temperatures above the Curie temperature. Magnetoresistance in the graphene electrodes further suggests induced spin–orbit coupling and proximity exchange via the ferromagnetic barrier. Tunnelling with magnon emission offers the possibility of spin injection.Electrons can tunnel through thin ferromagnetic CrBr3 barriers, sandwiched between graphene electrodes, via the emission of magnons, which suggests that these magnetic tunnel barriers could be used for spin injection.

Micromagnetometry of two-dimensional ferromagnets

Abstract: The study of atomically thin ferromagnetic crystals has led to the discovery of unusual magnetic behaviour and provided insight into the magnetic properties of bulk materials. However, the experimental techniques that have been used to explore ferromagnetism in such materials cannot probe the magnetic field directly. Here, we show that ballistic Hall micromagnetometry can be used to measure the magnetization of individual two-dimensional ferromagnets. Our devices are made by van der Waals assembly in such a way that the investigated ferromagnetic crystal is placed on top of a multi-terminal Hall bar made from encapsulated graphene. We use the micromagnetometry technique to study atomically thin chromium tribromide (CrBr3). We find that the material remains ferromagnetic down to monolayer thickness and exhibits strong out-of-plane anisotropy. We also find that the magnetic response of CrBr3 varies little with the number of layers and its temperature dependence cannot be described by the simple Ising model of two-dimensional ferromagnetism. Graphene-based Hall magnetometers can be used to study the magnetization of two-dimensional ferromagnets.

All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits

Abstract: A well-defined insulating layer is of primary importance in the fabrication of passive (e.g., capacitors) and active (e.g., transistors) components in integrated circuits. One of the most widely known two-dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, noncontact approach, which also allows for device design flexibility, produces no material wastage, and offers compatibility with almost any surface of interest, including flexible substrates. In this work, we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 ± 0.3 nF cm–2 for a dielectric thickness of ∼3 μm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 ± 1.7. The inkjet printed hBN dielectric has ...

Ultrahigh Performance of Nanoengineered Graphene-Based Natural Jute Fiber Composites.

Abstract: Natural fibers composites are considered as a sustainable alternative to synthetic composites due to their environmental and economic benefits. However, they suffer from poor mechanical and interfacial properties due to a random fiber orientation and weak fiber-matrix interface. Here we report nanoengineered graphene-based natural jute fiber preforms with a new fiber architecture (NFA) which significantly improves their mechanical properties and performances. Our graphene-based NFA of jute fiber preform enhances the Young modulus of jute-epoxy composites by ∼324% and tensile strength by ∼110% more than untreated jute fiber composites, by arranging fibers in a parallel direction through individualization and nanosurface engineering with graphene derivatives. This could potentially lead to manufacturing of high-performance natural alternatives to synthetic composites in various stiffness-driven applications.

Electrochemistry of the Basal Plane versus Edge Plane of Graphite Revisited

Abstract: The electrochemical activity of the basal plane and edge plane of graphite has long been a subject of an extensive debate. While significant advances have been made, several gaps still exist in our...

Graphene Thermal Emitter with Enhanced Joule Heatingand Localized Light Emission in Air

Abstract: Controlling thermal radiation in nanoscale is critical for verifying the Planck’s law in subwavelength limit, and is the key for a range of innovative technologies including energy, display and sec...

Dimensional reduction, quantum Hall effect and layer parity in graphite films

Abstract: The quantum Hall effect (QHE) originates from discrete Landau levels forming in a two-dimensional electron system in a magnetic field1. In three dimensions, the QHE is forbidden because the third dimension spreads Landau levels into overlapping bands, destroying the quantization. Here we report the QHE in graphite crystals that are up to hundreds of atomic layers thick, a thickness at which graphite was believed to behave as a normal, bulk semimetal2. We attribute this observation to a dimensional reduction of electron dynamics in high magnetic fields, such that the electron spectrum remains continuous only in the field direction, and only the last two quasi-one-dimensional Landau bands cross the Fermi level3,4. Under these conditions, the formation of standing waves in sufficiently thin graphite films leads to a discrete spectrum allowing the QHE. Despite the large thickness, we observe differences between crystals with even and odd numbers of graphene layers. Films with odd layer numbers show reduced QHE gaps, as compared to films of similar thicknesses but with even numbers because the latter retain the inversion symmetry characteristic of bilayer graphene5,6. We also observe clear signatures of electron–electron interactions including the fractional QHE below 0.5 K. The quantum Hall effect is thought to exist only in two-dimensional materials. Here, transport measurements show that thin graphite slabs have a 2.5-dimensional version, with a parity effect for samples with odd and even number of layers.

Stacking Order in Graphite Films Controlled by van der Waals Technology.

Abstract: In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked def...

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Abstract: Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices. The possibility to combine planar and van der Waals heterostructures holds great promise for nanoscale electronic devices. Here, the authors report an innovative method to synthesise embedded graphene quantum dots within hexagonal boron nitride matrix for vertical tunnelling single electron transistor applications.

Excess resistivity in graphene superlattices caused by umklapp electron–electron scattering

Abstract: In electronic transport, umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals1,2. However, umklapp scattering is difficult to demonstrate in experiment, as it is easily obscured by other dissipation mechanisms1–6. Here we show that electron–electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperature and carrier density. The umklapp processes cause giant excess resistivity that rapidly increases with increasing superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of magnitude as compared to standard, non-superlattice graphene devices. The umklapp scattering exhibits a quadratic temperature dependence accompanied by a pronounced electron–hole asymmetry with the effect being much stronger for holes than electrons. In addition to being of fundamental interest, our results have direct implications for design of possible electronic devices based on heterostructures featuring superlattices. An increase in electrical resistance caused by the fundamental process of electrons scattering off of each other (umklapp scattering) is observed in graphene superlattice devices. This will limit the electrical properties of such devices.

Stacking transition in rhombohedral graphite

Abstract: Few-layer graphene (FLG) has recently been intensively investigated for its variable electronic properties, which are defined by a local atomic arrangement. While the most natural arrangement of layers in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking, characterized by a relatively high-energy barrier, can also occur. When both types of stacking occur in one FLG device, the arrangement results in an in-plane heterostructure with a domain wall (DW). In this paper, we present two approaches to demonstrate that the ABC stacking in FLG can be controllably and locally turned into the ABA stacking. In the first approach, we introduced Joule heating, and the transition was characterized by 2D peak Raman spectra at a submicron spatial resolution. The transition was initiated in a small region, and then the DW was controllably shifted until the entire device became ABA stacked. In the second approach, the transition was achieved by illuminating the ABC region with a train of 790-nm-wavelength laser pulses, and the transition was visualized by transmission electron microscopy in both diffraction and dark-field imaging modes. Further, using this approach, the DW was visualized at a nanoscale spatial resolution in the dark-field imaging mode.

Electronic phase separation in topological surface states of rhombohedral graphite

Abstract: Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.

High-temperature electronic devices enabled by hBN-encapsulated graphene

Abstract: Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).

Stress transfer at the nanoscale on graphene ribbons of regular geometry

Abstract: The knowledge of the mechanism of stress transfer from a polymer matrix to a 2-dimensional nano-inclusion such as a graphene flake is of paramount importance for the design and the production of effective nanocomposites. For efficient reinforcement the shape of the inclusion must be accurately controlled since the axial stress transfer from matrix to the inclusion is affected by the axial-shear coupling observed upon loading of a flake of irregular geometry. Herein, we study true axial phenomena on regular- exfoliated-graphene micro-ribbons which are perfectly aligned to the loading direction. We exploit the strain sensitivity of vibrational wave numbers in order to map point-by-point the strain built up along the length of graphene. By considering the balance of shear-to-axial forces, we identify the shear stress at the interface and develop a universal inverse-length parameter that governs the stress transfer process at the nanoscale. An important parameter that has come out of this approach is the prediction and measurement of the transfer length that is required for efficient stress in these systems.

Stacking transition in rhombohedral graphite

Abstract: Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking characterized by a relatively high energy barrier can also occur. When both stacking occur in the same FLG device this results in in-plane heterostructure with a domain wall (DW). We show that ABC stacking in FLG can be controllably and locally turned into ABA stacking by two following approaches. In the first approach, Joule heating was introduced and the transition was characterized by 2D-peak Raman spectra at a submicron spatial resolution. The observed transition was initiated at a small region and then the DW controllably shifted until the entire device became ABA stacked. In the second approach, the transition was achieved by illuminating the ABC region with a train of laser pulses of 790 nm wavelength, while the transition was visualized by transmission electron microscopy in both diffraction and dark field modes. Also, with this approach, a DW was visualized in the dark-field imaging mode, at a nanoscale spatial resolution.

Ultra-thin van der Waals crystals as semiconductor quantum wells

Abstract: Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials.

Electrochemistry of the Basal Plane versus Edge Plane of Graphite Revisited

Abstract: The electrochemical activity of the basal plane and edge plane of graphite has long been a subject of an extensive debate. While significant advances have been made, several gaps still exist in our understanding of this issue, namely, the relative differences in the electrochemical activity of the perfect basal plane and perfect edge plane and the dependence of measurable electrochemical quantities on the edge/defect density of the basal plane. In this work, we employ a microdroplet electrochemical cell technique and atomic force microscopy to measure localized electrochemical properties of the graphitic surface with known edge coverage. The electron transfer rate, capacitance, and density of electronic states of the perfect basal plane and perfect edge plane are estimated, and a qualitative model is proposed for the dependence of the electrochemical quantities on the defect density of the basal plane.

Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene

Abstract: The evolution of the manifestation of levels of defects in h-BN in tunneling through graphene/h-BN/graphene heterostructures with various degrees of perfection, from completely defectless to those with several tens of levels in the band gap of h-BN, has been studied. It has been shown that the behavior of these levels is related to the motion of Dirac points and the chemical potentials of graphene layers at change in the bias and gate voltages, which is described by the electrostatic model of an ideal defectless heterostructure. The density of states of graphene in a magnetic field has been studied by its probing by the level of a single defect with a sensitivity allowing the detection of splitting of the zeroth Landau level caused by the lifting of the spin and valley degeneracy already at B ∼ 4 T.

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Abstract: Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

Convergent and divergent beam electron holography and reconstruction of adsorbates on free-standing two-dimensional crystals

Abstract: Van der Waals heterostructures have been lately intensively studied because they offer a large variety of properties that can be controlled by selecting 2D materials and their sequence in the stack. The exact arrangement of the layers as well as the exact arrangement of the atoms within the layers, both are important for the properties of the resulting device. However, it is very difficult to control and characterize the exact position of the atoms and the layers in such heterostructures, in particular, along the vertical (z) dimension. Recently it has been demonstrated that convergent beam electron diffraction (CBED) allows quantitative three-dimensional mapping of atomic positions in three-dimensional materials from a single CBED pattern. In this study we investigate CBED in more detail by simulating and performing various CBED regimes, with convergent and divergent wavefronts, on a somewhat simplified system: a two-dimensional (2D) monolayer crystal. In CBED, each CBED spot is in fact an in-line hologram of the sample, where in-line holography is known to exhibit high intensity contrast in detection of weak phase objects that are not detectable in conventional in-focus imaging mode. Adsorbates exhibit strong intensity contrast in the zero and higher order CBED spots, whereas lattice deformation such as strain or rippling cause noticeable intensity contrast only in the first and higher order CBED spots. The individual CBED spots can thus be reconstructed as typical in-line holograms, and a resolution of 2.13 A can in principle be achieved in the reconstructions. We provide simulated and experimental examples of CBED of a 2D monolayer crystal. The simulations show that individual CBED spots can be treated as in-line holograms and sample distributions such as adsorbates, can be reconstructed. Individual atoms can be reconstructed from a single CBED pattern provided the later exhibits high-order CBED spots. The experimental results were obtained in a transmission electron microscope (TEM) at 80 keV on free-standing monolayer hBN containing adsorbates. Examples of reconstructions obtained from experimental CBED patterns at a resolution of 2.7 A are shown. CBED technique can be potentially useful for imaging individual biological macromolecules, because it provides a relatively high resolution and does not require additional scanning procedure or multiple image acquisitions and therefore allows minimizing the radiation damage.

Hall micromagnetometry of individual two-dimensional ferromagnets

Abstract: The recent advent of atomically-thin ferromagnetic crystals has allowed experimental studies of two-dimensional (2D) magnetism that not only exhibits novel behavior due to the reduced dimensionality but also often serves as a starting point for understanding of the magnetic properties of bulk materials. Here we employ ballistic Hall micromagnetometry to study magnetization of individual 2D ferromagnets. Our devices are multilayer van der Waals (vdW) heterostructures comprising of an atomically-thin ferromagnetic crystal placed on top of a Hall bar made from encapsulated graphene. 2D ferromagnets can be replaced repeatedly, making the graphene-based Hall magnetometers reusable and expanding a range of their possible applications. The technique is applied for the quantitative analysis of magnetization and its behavior in atomically thin CrBr3. The compound is found to remain ferromagnetic down to a monolayer thickness and exhibit high out-of-plane anisotropy. We report how the critical temperature changes with the number of layers and how domain walls propagate through the ultimately thin ferromagnets. The temperature dependence of magnetization varies little with thickness, in agreement with the strongly layered nature of CrBr3. The observed behavior is markedly different from that given by the simple 2D Ising model normally expected to describe 2D easy-axis ferromagnetism. Due to the increasingly common usage of vdW assembly, the reported approach offers vast possibilities for investigation of 2D magnetism and related phenomena.

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic microcavities

Abstract: Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.

Ultra-High Performance of Nano-Engineered Graphene-Based Natural Jute Fiber Composites

Abstract: Natural fibers composites are considered as sustainable alternative to synthetic composites due to their environmental and economic benefits. However, they suffer from poor mechanical and interfacial properties due to a random fiber orientation and weak fiber-matrix interface. Here we report nano-engineered graphene-based natural jute fiber preforms with a new fiber architecture (NFA) which significantly improves their properties and performances. Our graphene-based NFA of jute fiber perform enhances Young modulus of jute-epoxy composites by ~324% and tensile strength by ~110% more than untreated jute fiber composites, by arranging fibers in parallel direction through individualisation and nano surface engineering with graphene derivatives. This could potentially lead to manufacturing of high performance natural alternatives to synthetic composites in various stiffness driven high performance applications.