K
Kostya S. Novoselov
Researcher at National University of Singapore
Publications - 442
Citations - 234951
Kostya S. Novoselov is an academic researcher from National University of Singapore. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 115, co-authored 392 publications receiving 207392 citations. Previous affiliations of Kostya S. Novoselov include University of Manchester & Russian Academy of Sciences.
Papers
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The mechanics of graphene nanocomposites: A review
TL;DR: In this paper, the preparation and characterisation of different forms of graphene are reviewed and different techniques that have been employed to prepare graphene such as mechanical and solution exfoliation, and chemical vapour deposition are discussed briefly.
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Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
Roman V. Gorbachev,Ibtsam Riaz,Rahul R. Nair,Rashid Jalil,L. Britnell,Branson D. Belle,Ernie W. Hill,Kostya S. Novoselov,Kenji Watanabe,Takashi Taniguchi,Andre K. Geim,Peter Blake +11 more
TL;DR: The identification of single- and few- layer boron nitride is described, its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions.
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Molecular doping of graphene
Tim O. Wehling,Kostya S. Novoselov,Sergey V. Morozov,E. E. Vdovin,Mikhail I. Katsnelson,and A. K. Geim,Alexander I. Lichtenstein +6 more
TL;DR: This letter presents the first joint experimental and theoretical investigation of adsorbate-induced doping of graphene, and shows that this peculiar density of states (DOS) of graphene is ideal for "chemical sensor" applications and explains the recently observed NO2 single molecule detection.
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Magnetic 2D materials and heterostructures.
TL;DR: In this paper, the authors discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently, focusing on the case of the two most studied systems-semiconducting CrI3 and metallic Fe3GeTe2.
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Raman Fingerprint of Charged Impurities in Graphene
TL;DR: In this article, strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage were reported, revealing the presence of excess charges even in the absence of intentional doping.