Koushik Guha

Bio: Koushik Guha is an academic researcher from National Institute of Technology, Silchar. The author has contributed to research in topics: Capacitive sensing & Capacitance. The author has an hindex of 12, co-authored 115 publications receiving 474 citations. Previous affiliations of Koushik Guha include K L University.

HWPSO: A new hybrid whale-particle swarm optimization algorithm and its application in electronic design optimization problems

Abstract: In this paper, a new population based hybrid meta-heuristic algorithm called the Hybrid Whale-Particle Swarm Optimization Algorithm (HWPSO) for solving complex optimization problems has been proposed. The proposed algorithm tries to overcome the limitations associated in a Particle Swarm Optimization (PSO) exploration phase i.e. Stagnation Effect, by hybridizing with a whale optimization algorithm (WOA) in a novel way as WOA has been reported to have very good exploration capability. During hybridization, two novel techniques have been employed, namely ‘Forced’ Whale and ‘Capping’ Phenomenon. The ‘Forced’ WOA is introduced in exploration phase and it enables the WOA to guide PSO for better local optima avoidance and concurrently a new ‘Capping’ phenomenon is employed which restricts the WOA search mechanism during exploitation phase, thereby converging the solution faster to a global optimum value. The performance of the proposed HWPSO has tested on 18 benchmark mathematical functions and 3 Electronics Design Optimization problems. The simulation results indicate that the proposed algorithm outperforms many state of the art algorithms by achieving a better optima with a very low standard deviation for most of the benchmark functions used. The effectiveness of the proposed HWPSO has been also validated by statistical as well as complexity analysis. The performance of HWPSO algorithm is also found to be satisfactory in all three cases of electronics design optimization problems, which have been further validated with standard design tools and found to be in close agreement with each other.

Fabrication and Characterization of Capacitive RF MEMS Perforated Switch

Abstract: In this paper, we have designed, simulated, fabricated, and characterized a clamped-clamped micro mechanical structure-based shunt capacitive RF MEMS switch. The clamped–clamped micromechanical structure is micromachined using a gold metal thickness of 500 nm. AlN is used as a dielectric material, and it is deposited using the dc sputtering PVD process. In the MEMS technology, particularly in devices fabrication, releasing the membrane is a difficult task, and here, we have presented a novel wet process to release the membrane. Primarily, the S1813 sacrificial layer is etched by using the piranha solution and cleaned with the IPA solution. Critical point drying is done after fabrication to reduce the stiction effect on the switch. Overall, the switch requires the pull-in voltage of 5.5 V for 1.8- $\mu \text{m}$ displacement. In the process of optimization, primarily, the switch is designed and simulated using finite-element method tools. The reliability of the capacitive RF MEMS switches depends on the stiction problem caused by dielectric charging, and the proposed capacitive switch dielectric charging behavior is characterized using the CV curve method.

A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam

Abstract: This paper deals with the approach to accurately model the capacitance of non-uniform meander based RF MEMS shunt switch with perforated structure. Here the general analytical model of capacitance is proposed for both up state and down state condition of the switch. The model also accounts for fringing capacitance due to beam thickness and etched holes on the beam. Calculated results are validated with the simulated results of full 3D FEM solver Coventorware in both the conditions of the switch. Variation of Up-state and Down-state capacitances with different dielectric thicknesses and voltages are plotted and error of analytical value is estimated and analyzed. Three benchmark models of parallel plate capacitance are modified for MEMS switch operation and their results are compared with the proposed model. Percentage contribution of fringing capacitance in up-state and down-state is approx. 25% and 2%, respectively, of the total capacitance. The model shows good accuracy with the mean error of −4.45% in up-state and −5.78% in down-state condition for a wide range of parameter variations and −2.13% for ligament efficiency of μ = 0.3.

Design and Flow Analysis of MEMS based Piezo-electric Micro Pump

Abstract: Controlled drug delivery in medical application plays a prominent role, that can be achieved by micro-drug delivery devices. The efficient working of the controlled drug delivery system depends on the micropump in it. This paper presents theoretical, design and simulated analysis of piezoelectrically actuated micropump constructed using PZT-5H material, quartz channel, and a PDMS membrane. The designed micro pump is analyzed for different structural, material changes by considering turbulent and laminar flows. The turbulent flow model is having a flow rate of 0.039 µ3m/s, while laminar flow is having 0.029 µ3m/s at a less operating voltage of 5 V.

Design and simulation of fixed–fixed flexure type RF MEMS switch for reconfigurable antenna

Abstract: This Paper Presents the design and simulation of RF MEMS switch taken on Microstrip patch antenna loaded with the circular type CSRR. The Tunability of the patch antenna is achieved when the two switches moves from upstate to down state arranged on the feeding line provided with the CPW. The actuation voltage required to move the switch downwards is 7.6 V. The switch operates at transition time of 0.8 µsec with the capacitance ratio 10. The return loss (S11) of antenna − 28.67 dB is observed at the frequency of 19 GHz when one switch is in on state and at 16 GHz frequency the S11 of − 29.31 dB is achieved by actuating the 2 switches at a time, which gives the reconfigurable property of the antenna. The antenna provides 2 GHz and 5 GHz frequency shift when single and both the switches are in on state. The antenna can be tuned for various applications in the range of 15–30 GHz frequency. The characteristics of switch has been observed by simulating the switch design in FEM tool and results have been compared with theoretical calculations. The tunable characteristics of antenna has been observed and presented by using HFSSV.13 tool.

A comprehensive survey: Whale Optimization Algorithm and its applications

Abstract: Whale Optimization Algorithm (WOA) is an optimization algorithm developed by Mirjalili and Lewis in 2016. An overview of WOA is described in this paper, rooted from the bubble-net hunting strategy, besides an overview of WOA applications that are used to solve optimization problems in various categories. The best solution has been determined to make something as functional and effective as possible through the optimization process by minimizing or maximizing the parameters involved in the problems. Research and engineering attention have been paid to Meta-heuristics for purposes of decision-making given the growing complexity of models and the needs for quick decision making in the engineering. An updated review of research of WOA is provided in this paper for hybridization, improved, and variants. The categories included in the reviews are Engineering, Clustering, Classification, Robot Path, Image Processing, Networks, Task Scheduling, and other engineering applications. According to the reviewed literature, WOA is mostly used in the engineering area to solve optimization problems. Providing an overview and summarizing the review of WOA applications are the aims of this paper.

Particle Swarm Optimization: A Comprehensive Survey

Abstract: Particle swarm optimization (PSO) is one of the most well-regarded swarm-based algorithms in the literature. Although the original PSO has shown good optimization performance, it still severely suffers from premature convergence. As a result, many researchers have been modifying it resulting in a large number of PSO variants with either slightly or significantly better performance. Mainly, the standard PSO has been modified by four main strategies: modification of the PSO controlling parameters, hybridizing PSO with other well-known meta-heuristic algorithms such as genetic algorithm (GA) and differential evolution (DE), cooperation and multi-swarm techniques. This paper attempts to provide a comprehensive review of PSO, including the basic concepts of PSO, binary PSO, neighborhood topologies in PSO, recent and historical PSO variants, remarkable engineering applications of PSO, and its drawbacks. Moreover, this paper reviews recent studies that utilize PSO to solve feature selection problems. Finally, eight potential research directions that can help researchers further enhance the performance of PSO are provided.

A Review of Actuation and Sensing Mechanisms in MEMS-Based Sensor Devices

Abstract: Over the last couple of decades, the advancement in Microelectromechanical System (MEMS) devices is highly demanded for integrating the economically miniaturized sensors with fabricating technology. A sensor is a system that detects and responds to multiple physical inputs and converting them into analogue or digital forms. The sensor transforms these variations into a form which can be utilized as a marker to monitor the device variable. MEMS exhibits excellent feasibility in miniaturization sensors due to its small dimension, low power consumption, superior performance, and, batch-fabrication. This article presents the recent developments in standard actuation and sensing mechanisms that can serve MEMS-based devices, which is expected to revolutionize almost many product categories in the current era. The featured principles of actuating, sensing mechanisms and real-life applications have also been discussed. Proper understanding of the actuating and sensing mechanisms for the MEMS-based devices can play a vital role in effective selection for novel and complex application design.

Scaling properties of the tunneling field effect transistor (TFET) : Device and circuit

Abstract: The scaling properties of the tunneling field effect transistor (TFET) are shown using standard 130 nm, 90 nm, and 65 nm CMOS process flows. For the different technology nodes the temperature dependence is presented. The device characteristic does not show degradation after a combined voltage and temperature cycle. It is shown that the TFET dependence on the design parameters, i.e. channel width and length, is comparable to that of the standard MOSFET. Experimental and simulation results are presented for mixed MOSFET/TFET circuits. The usage of the TFET does not cause delay degradation. The static power consumption and signal integrity are improved compared to the CMOS realization.