Krishna Mainali

Bio: Krishna Mainali is an academic researcher from North Carolina State University. The author has contributed to research in topics: Insulated-gate bipolar transistor & Transformer. The author has an hindex of 17, co-authored 39 publications receiving 1128 citations. Previous affiliations of Krishna Mainali include National University of Singapore.

Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters

Abstract: Medium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the active front end converter for solid-state transformers (SSTs). The transformerless intelligent power substation (TIPS) is one such application for these devices. TIPS is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid. It is an all SiC device-based multistage SST. This paper focuses on the advantages, design considerations, and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference. The efficiency of the TIPS topology is also calculated using the experimentally measured loss data of the devices and the high-frequency transformer. Experimental results captured on a developed prototype of TIPS along with its measured efficiency are also given.

Conducted EMI Mitigation Techniques for Switch-Mode Power Converters: A Survey

Abstract: Several techniques to mitigate conducted electromagnetic interference (EMI) in switch-mode power supplies (SMPS) have been reported in literature. Of these, this paper reviews those techniques that are primarily meant for ac-dc and dc-dc power converters. The techniques are broadly classified based on two criteria-1) reduction of the noise after generation and 2) reduction of the noise at the generation stage itself. A detailed classification and review of various noise mitigation techniques currently available in literature are presented. It is believed that the classification and review of the conducted EMI mitigation techniques presented in this paper would be useful to SMPS researchers and designers.

A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

Abstract: The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems.

Design Considerations of a 15-kV SiC IGBT-Based Medium-Voltage High-Frequency Isolated DC–DC Converter

Abstract: A dual active bridge (DAB) is a zero-voltage switching (ZVS) high-power isolated dc–dc converter The development of a 15-kV SiC insulated-gate bipolar transistor switching device has enabled a noncascaded medium voltage (MV) isolated dc–dc DAB converter It offers simple control compared to a cascaded topology However, a compact-size high frequency (HF) DAB transformer has significant parasitic capacitances for such voltage Under high voltage and high $dV/dT$ switching, the parasitics cause electromagnetic interference and switching loss They also pose additional challenges for ZVS The device capacitance and slowing of $dV/dT$ play a major role in deadtime selection Both the deadtime and transformer parasitics affect the ZVS operation of the DAB Thus, for the MV-DAB design, the switching characteristics of the devices and MV HF transformer parasitics have to be closely coupled For the ZVS mode, the current vector needs to be between converter voltage vectors with a certain phase angle defined by deadtime, parasitics, and desired converter duty ratio This paper addresses the practical design challenges for an MV-DAB application

Design and evaluation of isolated gate driver power supply for medium voltage converter applications

Abstract: The commercial gate drivers are available upto 6.5 kV IGBTs. With the advances in the SiC, power devices rated beyond 10 kV are being researched. These devices will have use on medium voltage power converters. Commercial gate drivers rated for such high voltages are not available. These power devices have very high dv/dts (30–100 kV/µs) at switching transitions. Such high dv/dts bring in challenges in the gate driver design. The isolation stage of the gate power supply needs to have very low coupling capacitance to limit the high frequency circulating currents from reaching the gate driver control circuits. Also, the isolation stage has to be designed with insulation several times higher than the peak system voltage level. In this paper, design, development and evaluation of the gate power supply for medium voltage level applications have been investigated. Several isolation transformer designs have been investigated and optimum design, with very low coupling capacitance ≈ 0.5 pF, has been identified and used in the gate driver design. Experimental characterization of the transformer has been done. The performance of the gate driver power supply has been evaluated in several MV power converters, using 10 kV SiC MOSFETs.

Iterative Learning Control: Brief Survey and Categorization

Abstract: In this paper, the iterative learning control (ILC) literature published between 1998 and 2004 is categorized and discussed, extending the earlier reviews presented by two of the authors. The papers includes a general introduction to ILC and a technical description of the methodology. The selected results are reviewed, and the ILC literature is categorized into subcategories within the broader division of application-focused and theory-focused results.

The Smart Transformer: Impact on the Electric Grid and Technology Challenges

Abstract: The increasing proliferation of renewable energy resources and new sizeable loads like electric vehicle (EV) charging stations has posed many technical and operational challenges to distribution grids [1]. Encouraged by attractive tax incentives and promotion policies, local grid end consumers are becoming not only consumers of electricity but, in many cases, also producers. The actual electric distribution system limits the use of renewable energy resources, offers poor EV infrastructure, and is based on a unidirectional information flow from sources to control centers.

Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters

Abstract: Medium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the active front end converter for solid-state transformers (SSTs). The transformerless intelligent power substation (TIPS) is one such application for these devices. TIPS is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid. It is an all SiC device-based multistage SST. This paper focuses on the advantages, design considerations, and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference. The efficiency of the TIPS topology is also calculated using the experimentally measured loss data of the devices and the high-frequency transformer. Experimental results captured on a developed prototype of TIPS along with its measured efficiency are also given.