Kritika Aditya

TL;DR: This letter investigates the RF performance of a negative capacitance FinFET using BSIM-CMG compact model extracted from DC and RF measured data of 10-nm technology node devices, and finds that NC-FinFET’s cut-off frequency is a function of LaTeX, and observes that the self-heating effect in NC-finFET increases with increase ininline-formula.

TL;DR: The characterization and modeling of multi-finger gate all around (GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz shows a good correlation with the measurement data and the self-heating effect (SHE) is significant in short-channel silicon on insulator (SOI) NWFets.

TL;DR: In this article, a metal ferroelectric insulator semiconductor (MFIS) -type junctionless accumulation mode (JAM) negative capacitance (NC)-FinFET with reduced self-heating is proposed for the low-power Internet-of-Things (IoT) applications at 7-nm technology node.

TL;DR: In this paper, the authors have performed DC model parameter extraction and statistical process variations for 7nm target device using industry standard BSIM-CMG model using 1000 Monte Carlo simulation runs.

TL;DR: In this paper, the effect of silicon-on-insulator (SOI) thickness scaling in fully and partially depleted SOI and PD-SOI devices is analyzed for their transient response to heavy-ion irradiation.