Author
Kuk-Hwan Kim
Other affiliations: KAIST
Bio: Kuk-Hwan Kim is an academic researcher from University of Michigan. The author has contributed to research in topics: Resistive random-access memory & Layer (electronics). The author has an hindex of 17, co-authored 72 publications receiving 3402 citations. Previous affiliations of Kuk-Hwan Kim include KAIST.
Papers
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TL;DR: A high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the Memristor element.
Abstract: Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
853 citations
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TL;DR: Large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system with excellent reproducibility and reliability are demonstrated and facilitates further studies on hybrid nano/CMOS systems.
Abstract: We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a write-once type memory depending on the device configuration. The demonstration of large-scale crossbar arrays with excellent reproducibility and reliability also facilitates further studies on hybrid nano/CMOS systems.
619 citations
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TL;DR: It is shown that in nanoscale two-terminal resistive switches the resistance switching can be dominated by the formation of a single conductive filament, making them well suited for memory or logic operations using conventional or emerging hybrid nano/CMOS architectures.
Abstract: We show that in nanoscale two-terminal resistive switches the resistance switching can be dominated by the formation of a single conductive filament. The probabilistic filament formation process strongly affects the device operation principle, and can be programmed to facilitate new functionalities such as multibit switching with partially formed filaments. In addition, the nanoscale switches exhibit excellent performance metrics making them well suited for memory or logic operations using conventional or emerging hybrid nano/CMOS architectures.
362 citations
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TL;DR: In this article, the memristive behavior is attributed to the migration of oxygen vacancies upon bias which modulates the interplay between Schottky barrier emission and tunneling at the WOX/electrode interface.
Abstract: Nanoscale memristive devices using tungsten oxide as the switching layer have been fabricated and characterized. The devices show the characteristics of a flux-controlled memristor such that the conductance change is governed by the history of the applied voltage signals, leading to synaptic behaviors including long-term potentiation and depression. The memristive behavior is attributed to the migration of oxygen vacancies upon bias which modulates the interplay between Schottky barrier emission and tunneling at the WOX/electrode interface. A physical model incorporating ion drift and diffusion effects using an internal state variable representing the area of the conductive region has been proposed to explain the observed memristive behaviors. A SPICE model has been further developed that can be directly incorporated into existing circuit simulators. This type of device can be fabricated with low-temperature processes and has potential applications in synaptic computations and as analog circuit components.
361 citations
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TL;DR: In this article, the authors report on nanoscale resistive memory devices that exhibit diodelike I-V characteristics at on-state with reverse bias current suppressed to below 10−13 A and rectifying ratio >106.
Abstract: We report studies on nanoscale resistive memory devices that exhibit diodelike I-V characteristics at on-state with reverse bias current suppressed to below 10−13 A and rectifying ratio >106 The intrinsic diodelike characteristics are robust during device operation and can survive >108 write/erase programming cycles The devices can be programmed at reduced programming voltages compared to earlier studies without the initial high-voltage forming process Multibit storage capability was also reported The intrinsic diode characteristics provide a possible solution to suppress crosstalk in high-density crossbar memory or logic arrays particularly for those based on bipolar resistive switches (memristors)
230 citations
Cited by
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[...]
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …
33,785 citations
28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。
18,940 citations
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TL;DR: A nanoscale silicon-based memristor device is experimentally demonstrated and it is shown that a hybrid system composed of complementary metal-oxide semiconductor neurons and Memristor synapses can support important synaptic functions such as spike timing dependent plasticity.
Abstract: A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal−oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.
3,650 citations
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TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Abstract: Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.
3,037 citations
01 Jan 2010
TL;DR: In this paper, the authors describe a scenario where a group of people are attempting to find a solution to the problem of "finding the needle in a haystack" in the environment.
Abstract: 中枢神経系疾患の治療は正常細胞(ニューロン)の機能維持を目的とするが,脳血管障害のように機能障害の原因が細胞の死滅に基づくことは多い.一方,脳腫瘍の治療においては薬物療法や放射線療法といった腫瘍細胞の死滅を目標とするものが大きな位置を占める.いずれの場合にも,細胞死の機序を理解することは各種病態や治療法の理解のうえで重要である.現在のところ最も研究の進んでいる細胞死の型はアポトーシスである.そのなかで重要な位置を占めるミトコンドリアにおける反応および抗アポトーシス因子について概要を紹介する.
2,716 citations