Kyung-min Kim

TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.

TL;DR: TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with and appear to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events.

TL;DR: In this article, the leakage current density of a TiO2 film with an equivalent oxide thickness of 1.0-1.5 nm was 10−6−10−8A∕cm2 at ± 1V.

TL;DR: This study proposes and experimentally demonstrates an artificial nociceptor based on a diffusive memristor with critical dynamics for the first time, and builds an artificial sensory alarm system to experimentally demonstrate the feasibility and simplicity of integrating such novel artificial nOCICEptor devices in artificial intelligence systems, such as humanoid robots.

TL;DR: In this Review, memristors are examined from the frameworks of both von Neumann and neuromorphic computing architectures and a new logic computational process based on the material implication is discussed, which will substantially decrease the energy consumption for futuristic information technology.