Kyusun Choi

Bio: Kyusun Choi is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Flash ADC & CMOS. The author has an hindex of 15, co-authored 43 publications receiving 864 citations. Previous affiliations of Kyusun Choi include Foundation University, Islamabad.

Fat tree encoder design for ultra-high speed flash A/D converters

Abstract: The thermometer code-to-binary code encoder has become the bottleneck of ultra-high speed flash ADCs. In this paper, the authors present the fat tree thermometer code-to-binary code encoder that is highly suitable for ultra-high speed flash ADCs. The simulation and the implementation results show that the fat tree encoder outperforms the commonly used ROM encoder in terms of speed and power for the 6 bit CMOS flash ADC case. The speed is improved by almost a factor of 2 when using the fat tree encoder, which in fact demonstrates the fat tree encoder is an effective solution for the bottleneck problem in ultra-high speed ADCs.

“The CMOS Inverter” as a Comparator in ADC Designs

Abstract: This paper introduces a single-ended non-offset-cancelled flash ADC architecture, the “Threshold Inverter Quantizer” (TIQ). The TIQ is based on a CMOS inverter cell, in which the voltage transfer characteristics (VTC) are changed by systematic transistor sizing. As a result, a significant improvement of speed and reduction of area and power consumption is achieved. A sample TIQ based flash ADC chip including 3-bit, 4-bit and 6-bit versions together has been designed and fabricated with the 2 μ standard CMOS n-well technology. The proposed ADC cells are suitable for System-on-Chip (SoC) applications in high speed wireless products.

A 1-GSPS CMOS flash A/D converter for system-on-chip applications

Abstract: This paper presents an ultrafast CMOS flash A/D converter design and performance. Although the featured A/D converter is designed in CMOS, the performance is compatible to that of GaAs technology currently available. To achieve high-speed in CMOS, the featured A/D converter utilizes the Threshold Inverter Quantization (TIQ) technique. A 6-bit TIQ based flash A/D converter was designed with the 0.25 /spl mu/m standard CMOS technology parameter. It operates with sampling rates up to 1 GSPS, dissipates 66.87 mW of power at 2.5 V, and occupies 0.013 mm/sup 2/ area. The proposed A/D converter is suitable for System-on-Chip (SoC) applications in wireless products and other ultra high speed applications.

High frequency piezoelectric MEMS ultrasound transducers

Abstract: High-frequency ultrasound array transducers using piezoelectric thin films on larger structures are being developed for high-resolution imaging systems. The increase in resolution is achieved by a simultaneous increase in operating frequency (30 MHz to about 1 GHz) and close coupling of the electronic circuitry. Two different processing methods were explored to fabricate array transducers. In one implementation, a xylophone bar transducer was prototyped, using thin film PbZr0.52Ti0.48O3 (PZT) as the active piezoelectric layer. In the other, the piezoelectric transducer was prepared by mist deposition of PZT films over electroplated Ni posts. Because the PZT films are excited through the film thickness, the drive voltages of these transducers are low, and close coupling of the electronic circuitry is possible. A complementary metal-oxide-semiconductor (CMOS) transceiver chip for a 16-element array was fabricated in 0.35-mum process technology. The ultrasound front-end chip contains beam-forming electronics, receiver circuitry, and analog-to-digital converters with 3-Kbyte on-chip buffer memory.

CMOS Ultrasound Transceiver Chip for High-Resolution Ultrasonic Imaging Systems

Abstract: The proposed CMOS ultrasound transceiver chip will enable the development of portable high resolution, high-frequency ultrasonic imaging systems. The transceiver chip is designed for close-coupled MEMS transducer arrays which operate with a 3.3-V power supply. In addition, a transmit digital beamforming system architecture is supported in this work. A prototype chip containing 16 receive and transmit channels with preamplifiers, time-gain compensation amplifiers, a multiplexed analog-to-digital converter with 3 kB of on-chip SRAM, and 50-MHz resolution time delayed excitation pulse generators has been fabricated. By utilizing a shared A/D converter architecture, the number of A/D converter and SRAM is cut down to one, unlike typical digital beamforming systems which need 16 A/D converters for 16 receive channels. The chip was fabricated in a 0.35-mum standard CMOS process. The chip size is 10 mm2, and its average power consumption in receive mode is approximately 270 mW with a 3.3-V power supply. The transceiver chip specifications and designs are described, as well as measured results of each transceiver component and initial pulse-echo experimental results are presented.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Design and analysis of an adaptive transcutaneous power telemetry for biomedical implants

Abstract: Inductively coupled coil pair is the most common way of wirelessly transferring power to medical implants. However, the coil displacements and/or loading changes may induce large fluctuations in transmitted power into the implant if no adaptive control is used. In such cases, it is required to transmit excessive power to accommodate all the working conditions, which substantially reduces the power efficiency and imposes potential safety concerns. We have implemented a power transfer system with adaptive control technique to eliminate the power variations due to the loading or coupling coefficient changes. A maximum of 250mW power is transmitted through an optimized coil pair driven by Class-E power amplifier. Load shift keying is implemented to wirelessly transfer data back from the secondary to primary side over the same coil pair, with data rate of 3.3 kbps and packet error rate less than 10/sup -5/. A pseudo pulsewidth modulation has been designed to facilitate back data transmission along with forward power transmission. Through this back telemetry the system transmits the information on received power, back from implant to primary side. According to the data received, the system adjusts the supply voltage of the Class-E power amplifier through a digitally controlled dc-dc converter, thus varying the power sent to the implant. The key system parameters are optimized to ensure the stability of the closed-loop system. Measurements show that the system can transmit the 'just-needed' power for a wide range of coil separation and/or loading conditions, with power efficiency doubled when compared to the uncompensated link.

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

Abstract: Piezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.