L
L. De Michielis
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 11
Citations - 379
L. De Michielis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Electron mobility & MOSFET. The author has an hindex of 8, co-authored 11 publications receiving 358 citations.
Papers
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Journal ArticleDOI
Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
TL;DR: In this paper, the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current.
Journal ArticleDOI
Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
TL;DR: In this article, the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process is reported.
Proceedings ArticleDOI
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
TL;DR: In this article, a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism is proposed.
Journal ArticleDOI
The High-Mobility Bended n-Channel Silicon Nanowire Transistor
Kirsten E. Moselund,M. Najmzadeh,P. Dobrosz,Sarah H. Olsen,Didier Bouvet,L. De Michielis,V. Pott,Adrian M. Ionescu +7 more
TL;DR: In this article, a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the channel was presented.
Proceedings ArticleDOI
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
Kirsten E. Moselund,P. Dobrosz,Sarah H. Olsen,V. Pott,L. De Michielis,Dimitrios Tsamados,Didier Bouvet,Anthony O'Neill,Adrian M. Ionescu +8 more
TL;DR: In this article, the mobility enhancement due to strain in bended NW MOSFETs was investigated by Raman spectroscopy, and the performance gain of bended compared to non-bended structures was most pronounced in low field conditions and at low temperatures.