L. F. Eastman

Bio: L. F. Eastman is an academic researcher from Cornell University. The author has contributed to research in topics: Quantum well & Phonon. The author has an hindex of 7, co-authored 11 publications receiving 824 citations.

Scattering of electrons at threading dislocations in GaN

Abstract: A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.

Calculation of the conduction band discontinuity for Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As heterojunction

Abstract: Photoluminescence studies at 4 K on Ga0.47In0.53As/ Al0.48In0.52As single quantum wells exhibit emission ranging from 1.318 eV for a 15‐A well to 0.82 eV for thick wells. The emission energy of each single quantum well is compared to theoretical curves which are generated from a finite potential square well model. The closest agreement between the experimental curves and the theoretical curves occurs when the conduction band discontinuity is taken to be 70% of the band‐gap discontinuity or 0.52 eV.

Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape

Abstract: Effective nonlinear gain coefficients due to the effects of carrier diffusion, capture, and escape are derived from the carrier transport equations. The quantum capture and escape processes between the confined states and the unconfined states are calculated from first principles by evaluating the carrier-polar longitudinal optical phonon interactions. The dc and ac capture times and escape times are derived from evaluating the net capture current of carriers. The differences in capture and escape times between dc and ac operating conditions are numerically investigated. We find that both dc and ac escape times are strongly dependent on the quantum well structure. This differs from the dc and ac capture times that are not sensitive to the quantum well structure. We also find that the dc escape time predicted by the classical thermionic emission theory will no longer be valid for narrow or shallow quantum wells. We show that both dc and ac capture and escape time ratios will increase as the carrier temperature and the carrier density in the quantum well increase. Therefore, we suggest that the possible cause of the resonant frequency degradation and dramatic increase in the damping rate results from the increase of the ac capture to escape time ratio by the effects of carrier heating. Two theoretical models (2N and 3N models) were used to study the effects of carrier diffusion-capture-escape on the modulation response of quantum-well lasers and a distributed model of carrier transport in quantum-well lasers is proposed. Their implications in designing high-speed quantum-well lasers are discussed. >

Hot carrier and hot phonon effects on high-speed quantum well lasers

Abstract: We present a theoretical model to analyze the hot carrier and hot phonon effect on the modulation response of semiconductor quantum well lasers. We find that the carrier heating strongly depends on the energy relaxation time of carriers and the lifetime of longitudinal‐optic (LO) phonons. Furthermore, the carrier heating will significantly decrease the differential gain and increase the nonlinear gain coefficient and thus reduce the modulation bandwidth. From the numerical result, we demonstrate the bottleneck effect of the hot LO phonons on the modulation response of quantum well lasers. This implies that reducing the lifetime of LO phonons, for example, by doping in the quantum well, will most effectively decrease the carrier temperature and thus improve the modulation bandwidth.

Anisotropic transport in modulation‐doped quantum‐well structures

Abstract: Anisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.

Band parameters for III–V compound semiconductors and their alloys

Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Abstract: Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15

Gan : processing, defects, and devices

Abstract: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Abstract: REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 x 10(8) to 1 x 10(12) cm-2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Abstract: Two dimensional electron gases in Al x Ga 12x N/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance‐voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined