scispace - formally typeset
Search or ask a question
Author

L. Gonzo

Bio: L. Gonzo is an academic researcher. The author has contributed to research in topics: Polycrystalline silicon & Silicon. The author has an hindex of 1, co-authored 1 publications receiving 4 citations.

Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the surface of highly phosphorus-doped polysilicon films produced by low pressure chemical vapour deposition (LPCVD) was investigated using scanning tunneling microscopy (STM) in air.

4 citations


Cited by
More filters
Journal ArticleDOI
A. Pleschinger1, J. Lutz1, F. Kuchar1, H. Noll, M. Pippan 
TL;DR: In this paper, the surface topography and structure of polycrystalline silicon films were investigated using atomic force microscopy (OFM) measurements on undoped as-grown samples with deposition temperatures between 550 and 630°C.
Abstract: The surface topography and structure of low-pressure chemical vapour-deposited silicon films grown on the thermal oxide of (100) silicon substrates have been investigated using atomic force microscopy. The measurements have been performed on undoped as-grown samples with deposition temperatures between 550 and 630°C and after ex situ phosphorus doping for samples deposited at 620°C. The transition from amorphous to polycrystalline deposition of the silicon film takes place in the temperature range 570-600°C. At 570°C a small number of crystallites are embedded in an amorphous matrix. With increasing temperature the number of crystallites grows rapidly and at 600°C the deposited film is polycrystalline. Doping from a POCl 3 source and subsequent annealing of films deposited at 620°C causes complete recrystallization. For the first time it has been possible to investigate the topography and the grain structure of polycrystalline silicon films using a scanning probe technique only. Our clear distinction between these two features allows controversial results from different characterization methods to be clarified.

8 citations

Journal ArticleDOI
TL;DR: In this paper, the mean grain sizes of P-doped polycrystalline silicon films produced by low-pressure chemical vapour deposition (LPCVD) were investigated using scanning electron microscopy (SEM).

8 citations

Journal ArticleDOI
TL;DR: In this article, the surface topography and structure of low-pressure chemical vapor deposited silicon films on thermal oxide grown on (100) silicon substrates have been investigated after different processing steps.
Abstract: The surface topography and structure of low-pressure chemical vapor deposited silicon films on thermal oxide grown on (100) silicon substrates have been investigated after different processing steps. Atomic force microscopy topographic measurements are performed on undoped as-grown samples and after ex situ phosphorous doping from a POCl3 source. In addition, topographies of the doped films are obtained using constant current scanning tunneling microscopy on hydrofluoric acid passivated surfaces under high vacuum. As a result we have found that surface topography and roughness are mainly determined by the deposition process. Roughness of films deposited at 620 °C is related to the grain structure represented by hillocks with typical lateral dimensions between 50 and 150 nm in the images. Doping by high temperature diffusion and subsequent annealing causes a complete recrystallisation of the film, leading to typical lateral grain sizes between 200 and 600 nm. However, the surface topography of the doped fi...

6 citations