L
L. J. Mandalapu
Researcher at University of California, Riverside
Publications - 19
Citations - 1456
L. J. Mandalapu is an academic researcher from University of California, Riverside. The author has contributed to research in topics: Photoluminescence & Molecular beam epitaxy. The author has an hindex of 13, co-authored 19 publications receiving 1427 citations.
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High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
TL;DR: In this article, the acceptor energy level of Sb dopant is estimated to be 0.2 eV above the valence band, which is an excellent dopant for reliable and reproducible p-type ZnO fabrication.
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Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy
TL;DR: In this article, photoluminescence spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018cm−3 and acceptor binding energy of 0.14 eV.
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Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes
TL;DR: In this article, a p-n homojunction light-emitting diodes were fabricated based on p-type Sb-doped ZnO∕n-type Ga-dope thin films, which yielded strong near-band edge emissions in temperature-dependent and injection current-dependent electroluminescence measurements.
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p-type behavior from Sb-doped ZnO heterojunction photodiodes
TL;DR: In this article, the p-type behavior of Sb-doped ZnO was studied by carrying out I-V and capacitance-voltage (C-V) measurements.
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p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
TL;DR: The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements as discussed by the authors.