Author
Lan Kim
Bio: Lan Kim is an academic researcher from Myongji University. The author has contributed to research in topics: Thermal management of high-power LEDs & Thermal resistance. The author has an hindex of 1, co-authored 1 publications receiving 84 citations.
Papers
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TL;DR: In this article, the thermal transient measurements of high-power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the literature.
Abstract: Thermal transient measurements of high power GaN-based light-emitting diodes (LEDs) with multichip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multichip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multichip LEDs has been analogized.
86 citations
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TL;DR: It was found that the thermal improvement of the LED module led to the enhancement of the light output power and radiant intensity and the temperature calibrating factor, 0.046 nm/°C, was calculated from the peak wavelengths of the LEDs modules.
59 citations
TL;DR: In this article, a method for creating compact thermal models of single-chip and multi-chip LED package is developed and evaluated with good agreement between the finite volume simulation and experimental data.
53 citations
TL;DR: In this article, the authors describe a novel thermal characterization method of GaN-based Light Emitting Diode (LED) package driven under the Alternating Current (AC) mode.
Abstract: In this paper we describe a novel thermal characterization method of GaN-based Light Emitting Diode (LED) package driven under the Alternating Current (AC) mode. The result was compared with the results from the thermal analysis for LED package operated under the Direct Current (DC) condition. Different from the DC condition, the junction temperature rise with the operation time of LED package was exhibited in a band formation. Finite Volume Method (FVM) was utilized to calculate the thermal performance of LED package under the AC condition using the input power extracted from the output current and voltage from the AC power supply. The experimental result was in a good agreement with the simulation data.
42 citations
TL;DR: A 3D simulation model has been created and simulated with Comsol Multiphysics software and one LED spot light device with a defected LED module was found in photometric measurements and IR-imaging.
38 citations
TL;DR: In this paper, the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate was demonstrated.
Abstract: We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm2 exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q)rr of GaN-SBD is one twentieth of Si-diode at 175°C.
37 citations