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Lea M. Metin

Bio: Lea M. Metin is an academic researcher from Honeywell. The author has contributed to research in topics: Silicon & Boron. The author has an hindex of 3, co-authored 6 publications receiving 27 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, a boron-inkjet printing method was used to create high efficiency n-type Si cells with a Voc of 644 mV, a Jsc of 38.6 mA/cm2, and a fill factor of 76.3%.
Abstract: Formation of a well-passivated boron emitter for mass production of low-cost and high-efficiency n-type silicon solar cells is a major challenge in the photovoltaic industry. In this letter, we report on a novel and commercially viable method, inkjet printing, to create boron emitters. Phosphorus diffusion was used on the rear to form a back-surface held in conjunction with chemically grown oxide/silicon nitride (SiNx) stack on the front and back for surface passivation. Finally, front and back screen-printed contacts were formed through the dielectric stacks to fabricate large-area (239 cm2) n-type cells. This technology resulted in 19.0%-efficient p+-n-n+ cells with a Voc of 644 mV, a Jsc of 38.6 mA/cm2, and a fill factor of 76.3%. This demonstrates for the hrst time the promise of boron-inkjet-printing technology for low-cost and high-performance n-type Si cells.

14 citations

Proceedings ArticleDOI
03 Jun 2012
TL;DR: In this article, a commercially viable screen printing technology to create boron emitters was reported, which resulted in 193 % high efficient large n-type solar cells with an opencircuit voltage V oc of 653 mV, short-circuit current density J sc of 377 mA/cm2, and fill factor FF of 783 % Co-diffusion and co-firing reduced the number of processing steps compared to the traditional technologies like BBr 3 diffusion.
Abstract: Formation of low-cost boron-doped emitters for mass production of n-type silicon solar cells is a major challenge in the PV industry In this paper, we report on commercially viable screen printing technology to create boron emitters A screen-printed boron emitter and phosphorus implanted back surface field were formed simultaneously by a co-annealing process Front and back surfaces were passivated by chemically-grown oxide/PECVD silicon nitride stack Front and back contacts were formed by traditional screen printing and firing processes with silver/aluminum grid on front and local silver contacts on the rear This resulted in 193 % high efficient large are (239cm2) n-type solar cells with an open-circuit voltage V oc of 653 mV, short-circuit current density J sc of 377 mA/cm2, and fill factor FF of 783 % Co-diffusion and co-firing reduced the number of processing steps compared to the traditional technologies like BBr 3 diffusion Detailed cell analysis gave a bulk lifetime of over 1 ms, the emitter saturation current density J 0e of 101 fA/cm2, and base saturation current density J 0b of 259 fA/cm2 respectively This demonstrates the potential of this novel technology for production of low-cost high-efficiency cells

7 citations

Proceedings ArticleDOI
19 Jun 2011
TL;DR: In this article, a screen-printed 19.3% n-type silicon cell with V oc of 646 mV, J sc of 39.4 mA/cm2, and FF of 75.6 % was reported.
Abstract: Formation of boron emitters for mass production of low-cost and high efficiency n-type silicon solar cells is a major challenge in the PV industry. In this paper, we report on the successful fabrication of high efficiency screen-printed 19.3% n-type silicon cell with V oc of 646 mV, J sc of 39.4 mA/cm2, and FF of 75.6 %, using boron dopant ink applied by inkjet printing to create boron-doped emitter. The detailed internal quantum efficiency (IQE) analysis showed excellent front surface recombination velocity (FSRV) of 15,000 cm/s and back surface recombination velocity (BSRV) of 66 cm/s. This demonstrates for the first time the promise of boron dopant ink for high performance n-type silicon solar cells.

3 citations

Patent
24 Oct 2011
TL;DR: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink composition are provided in this article, where an exemplification of a dopant composition comprises a compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element.
Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element Further, the dopant ink composition includes a silicon-containing compound

3 citations

Patent
02 Jun 2014
TL;DR: In this paper, a liquid titanium oxide (LTO) composition is described, and methods for forming such compositions, methods for etching material layers using such compositions are provided, as well as methods to etch material layers with such compositions.
Abstract: Liquid titanium oxide compositions, methods for forming such compositions, and methods for etching material layers using such compositions are provided. In accordance with an exemplary embodiment, a liquid titanium oxide composition contains a solvent system, an organotitanate, and a high boiling point solvent having a boiling point in the range of about 140°C to about 400°C.

Cited by
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Journal ArticleDOI
TL;DR: In the past few decades, the fabrication of solar cells has been considered as one of the most promising ways to meet the increasing energy demands to support the development of modern society as well as to control the environmental pollution caused by the combustion of fossil fuels as discussed by the authors.
Abstract: In the past few decades, the fabrication of solar cells has been considered as one of the most promising ways to meet the increasing energy demands to support the development of modern society as well as to control the environmental pollution caused by the combustion of fossil fuels. A number of different types of solar cells, such as silicon solar cells (Si), Cu-based chalcogenides (Cu(In,Ga)Se2/Cu2ZnSn(S,Se)4) thin film solar cells (TFSC), dye-sensitized solar cells (DSSC), organic solar cells (OSC), and perovskite solar cells (PVSC), have been implemented in the photovoltaic technology. However, the high manufacturing costs of solar cells is one of the major obstacles for their wide-scale application. In this regard, inkjet printing has attracted tremendous interest in both academic research and industrial applications among all the various kinds of fabrication techniques and is believed to be one of the most promising methods to meet these requirements. The great advantages of inkjet printing are that the process is contactless, maskless and has a high material utilization rate, and good scalability, and compatibility of the roll-to-roll process. Additionally, the maskless nature of inkjet printing allows for freedom of design, which enables multi-functional properties of solar cells (i.e., power source and artwork) to be realized. In this review, the recent advances in inkjet printing with the deposition of different layers of various types of solar cells are summarized in detail and prospectives for the future development of printed/flexible solar cells are covered.

87 citations

Journal ArticleDOI
TL;DR: Investigations of inkjet-printing in the field of silicon photovoltaics are reviewed, focusing on the different inkjet processes for individual fabrication steps of a solar cell.
Abstract: The world's ever increasing demand for energy necessitates technologies that generate electricity from inexhaustible and easily accessible energy sources. Silicon photovoltaics is a technology that can harvest the energy of sunlight. Its great characteristics have fueled research and development activities in this exciting field for many years now. One of the most important activities in the solar cell community is the investigation of alternative fabrication and structuring technologies, ideally serving both of the two main goals: device optimization and reduction of fabrication costs. Inkjet technology is practically evaluated along the whole process chain. Research activities cover many processes, such as surface texturing, emitter formation, or metallization. Furthermore, the inkjet technology itself is manifold as well. It can be used to apply inks that serve as a functional structure, present in the final device, as mask for subsequent structuring steps, or even serve as a reactant source to activate chemical etch reactions. This article reviews investigations of inkjet-printing in the field of silicon photovoltaics. The focus is on the different inkjet processes for individual fabrication steps of a solar cell. A technological overview and suggestions about where future work will be focused on are also provided. The great variety of the investigated processes highlights the ability of the inkjet technology to find its way into many other areas of functional printing and printed electronics.

66 citations

Journal ArticleDOI
TL;DR: In this article, the evolution and current state, and potential areas of near future research focus, of leading inorganic materials based solar cells, including bulk crystalline, amorphous thin-films, and nanomaterials-based solar cells are reviewed.

56 citations

Journal ArticleDOI
TL;DR: In this paper, an effective chemical etching treatment to remove a boron-rich layer which has a significant negative impact on n-type silicon (Si) solar cells with a BORON emitter was reported.
Abstract: This paper reports on an effective chemical etching treatment to remove a boron-rich layer which has a significant negative impact on n-type silicon (Si) solar cells with boron emitter. A nitric acid-grown oxide/silicon nitride stack passivation on the boron-rich layer-etched boron emitter markedly decreases the emitter saturation current density J0e from 430 to 100 fA/cm2. This led to 1.6% increase in absolute cell efficiency including 22 mV increase in open-circuit voltage Voc and 1.9 mA/cm2 increase in short-circuit current density Jsc. This resulted in screen-printed large area (239 cm2) n-type Si solar cells with efficiency of 19.0%.

49 citations

Journal ArticleDOI
TL;DR: In this article, the fabrication of front junction n-type Si solar cells on 239 cm 2 Cz using ion implanted boron emitter and phosphorus back surface field (BSF) in combination with screen printed metallization was reported.

43 citations