Lekshmi Eswaramoorthy

Bio: Lekshmi Eswaramoorthy is an academic researcher. The author has contributed to research in topics: Semiconductor & Monolayer. The author has co-authored 1 publications.

Engineering Purcell factor anisotropy for dark and bright excitons in two dimensional semiconductors

Abstract: Tightly bound dark excitons in atomically thin semiconductors can be used for various optoelectronic applications including light storage and quantum communication. Their optical accessibility is however limited due to their out-of-plane transition dipole moment. We thus propose to strengthen the coupling of dark excitons in two dimensional materials with out-of-plane resonant modes of a cavity at room temperature, by engineering the anisotropy in the Purcell factor. A silica micro-disk characterised by high confinement of light in small modal volume, high Q-factor and free spectral range is used to couple to the excitons in monolayer transition metal dichalcogenides. We show numerically that the tapering of sidewalls of the micro-disk is an extremely versatile route for achieving the selective coupling of whispering gallery modes to light emitted from out-of-plane dipoles to the detriment of that from in-plane ones for four representative monolayer transition metal dichalcogenides.

Low-Cost Plasmonic Platform for Photon-Emission Engineering of Two-Dimensional Semiconductors

Abstract: Although the field of 2D materials has democratized materials science by making high quality samples accessible cheaply, due to the atomically thin nature of these systems, an integration with nanostructures is almost always required to obtain a significant optical response. Traditionally, these nanostructures are fabricated via electron beam lithography or focused ion beam milling, which are expensive and large area fabrication can be further time consuming. In order to overcome this problem, we report the integration of 2D semiconductors on a cost-effective and large area fabricated nanocone platform. We show that the plasmon modes of our nanocone structures lead to photoluminescence (PL) enhancement of monolayer WSe$_2$ by about eight to ten times compared to the non-plasmonic case, consistent with finite-difference time-domain simulations. Excitation power-dependent measurements reveal that our nanocone platform enables a versatile route to engineering the relative exciton trion contributions to the emission.

Engineering photoluminescence using low-cost platform in two-dimensional transition-metal dichalcogenides

Abstract: Atomically thin two-dimensional transition metal dichalcogenides have fascinated researchers due to their unique electronic and optical properties. The control of exciton-trion dynamics in two-dimensional semiconductors is critical for their application in optoelectronic devices. One way to engineer the exciton-trion dynamics is by applying strain in the monolayers of these two-dimensional materials using nanostructured substrates. Here we demonstrate a versatile route to engineering the exciton-trion dynamics in monolayer WSe2 by applying biaxial strain. A polytetrafluoroethylene (PTFE) nanocone array decorated by thin gold film and fabricated via colloidal lithography is used to create the strain in the superposed monolayer. To distinguish the effect of strain and plasmonics, we compare our results on the nanocone surface with the one for monolayer WSe2 on a plane gold film.

Gate tunable light–matter interaction in natural biaxial hyperbolic van der Waals heterostructures

Abstract: Abstract The recent discovery of natural biaxial hyperbolicity in van der Waals crystals, such as α -MoO 3 , has opened up new avenues for mid-IR nanophotonics due to their deep subwavelength phonon polaritons. However, a significant challenge is the lack of active tunability of these hyperbolic phonon polaritons. In this work, we investigate heterostructures of graphene and α -MoO 3 for actively tunable hybrid plasmon phonon polariton modes via electrostatic gating in the mid-infrared spectral region. We observe a unique propagation direction dependent hybridization of graphene plasmon polaritons with hyperbolic phonon polaritons for experimentally feasible values of graphene chemical potential. We further report an application to tunable valley quantum interference in this system with a broad operational bandwidth due to the formation of these hybrid modes. This work presents a lithography-free alternative for actively tunable, anisotropic spontaneous emission enhancement using a sub-wavelength thick naturally biaxial hyperbolic material.

Indirect bandgap MoSe2 resonators for light-emitting nanophotonics.

Abstract: Transition metal dichalcogenides (TMDs) are promising for new generation nanophotonics due to their unique optical properties. However, in contrast to direct bandgap TMD monolayers, bulk samples have an indirect bandgap that restricts their application as light emitters. On the other hand, the high refractive index of these materials allows for effective light trapping and the creation of high-Q resonators. In this work, a method for the nanofabrication of microcavities from indirect TMD multilayer flakes, which makes it possible to achieve pronounced resonant photoluminescence enhancement due to the cavity modes, is proposed. Whispering gallery mode (WGM) resonators are fabricated from bulk indirect MoSe2 using resistless scanning probe lithography. A micro-photoluminescence (μ-PL) investigation revealed the WGM spectra of the resonators with an enhancement factor up to 100. The characteristic features of WGMs are clearly seen from the scattering experiments which are in agreement with the results of numerical simulations. It is shown that the PL spectra in the fabricated microcavities are contributed by two mechanisms demonstrating different temperature dependences. The indirect PL, which is quenched with the temperature decrease, and the direct PL which almost does not depend on the temperature. The results of the work show that the suggested approach has great prospects in nanophotonics.

A photonic integrated chip platform for interlayer exciton valley routing

Abstract: Interlayer excitons in two-dimensional semiconductor heterostructures show suppressed electron–hole overlap resulting in longer radiative lifetimes as compared to intralayer excitons. Such tightly bound interlayer excitons are relevant for important optoelectronic applications, including light storage and quantum communication. Their optical accessibility is, however, limited due to their out-of-plane transition dipole moment. In this work, we design a complementary metal–oxide–semiconductor-compatible photonic integrated chip platform for enhanced near-field coupling of these interlayer excitons with the whispering gallery modes of a microresonator, exploiting the high confinement of light in a small modal volume and high-quality factor of the system. Our platform allows for highly selective emission routing via engineering an asymmetric light transmission that facilitates efficient readout and channeling of the excitonic valley state from such systems.