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Léonard Schué

Other affiliations: Université de Montréal
Bio: Léonard Schué is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Luminescence & Exciton. The author has an hindex of 6, co-authored 9 publications receiving 381 citations. Previous affiliations of Léonard Schué include Université de Montréal.

Papers
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Claudia Backes1, Claudia Backes2, Amr M. Abdelkader3, Concepción Alonso4, Amandine Andrieux-Ledier5, Raul Arenal6, Raul Arenal7, Jon Azpeitia6, Nilanthy Balakrishnan8, Luca Banszerus9, Julien Barjon5, Ruben Bartali10, Sebastiano Bellani11, Claire Berger12, Claire Berger13, Reinhard Berger14, M.M. Bernal Ortega15, Carlo Bernard16, Peter H. Beton8, André Beyer17, Alberto Bianco18, Peter Bøggild19, Francesco Bonaccorso11, Gabriela Borin Barin20, Cristina Botas, Rebeca A. Bueno6, Daniel Carriazo21, Andres Castellanos-Gomez6, Meganne Christian, Artur Ciesielski18, Tymoteusz Ciuk, Matthew T. Cole, Jonathan N. Coleman2, Camilla Coletti11, Luigi Crema10, Huanyao Cun16, Daniela Dasler22, Domenico De Fazio3, Noel Díez, Simon Drieschner23, Georg S. Duesberg24, Roman Fasel20, Roman Fasel25, Xinliang Feng14, Alberto Fina15, Stiven Forti11, Costas Galiotis26, Costas Galiotis27, Giovanni Garberoglio28, Jorge M. Garcia6, Jose A. Garrido, Marco Gibertini29, Armin Gölzhäuser17, Julio Gómez, Thomas Greber16, Frank Hauke22, Adrian Hemmi16, Irene Hernández-Rodríguez6, Andreas Hirsch22, Stephen A. Hodge3, Yves Huttel6, Peter Uhd Jepsen19, I. Jimenez6, Ute Kaiser30, Tommi Kaplas31, HoKwon Kim29, Andras Kis29, Konstantinos Papagelis27, Konstantinos Papagelis32, Kostas Kostarelos33, Aleksandra Krajewska34, Kangho Lee24, Changfeng Li35, Harri Lipsanen35, Andrea Liscio, Martin R. Lohe14, Annick Loiseau5, Lucia Lombardi3, María Francisca López6, Oliver Martin22, Cristina Martín36, Lidia Martínez6, José A. Martín-Gago6, José I. Martínez6, Nicola Marzari29, Alvaro Mayoral37, Alvaro Mayoral7, John B. McManus2, Manuela Melucci, Javier Méndez6, Cesar Merino, Pablo Merino6, Andreas Meyer22, Elisa Miniussi16, Vaidotas Miseikis11, Neeraj Mishra11, Vittorio Morandi, Carmen Munuera6, Roberto Muñoz6, Hugo Nolan2, Luca Ortolani, A. K. Ott3, A. K. Ott38, Irene Palacio6, Vincenzo Palermo39, John Parthenios27, Iwona Pasternak40, Amalia Patanè8, Maurizio Prato41, Maurizio Prato21, Henri Prevost5, Vladimir Prudkovskiy12, Nicola M. Pugno42, Nicola M. Pugno43, Nicola M. Pugno44, Teófilo Rojo45, Antonio Rossi11, Pascal Ruffieux20, Paolo Samorì18, Léonard Schué5, Eki J. Setijadi10, Thomas Seyller46, Giorgio Speranza10, Christoph Stampfer9, I. Stenger5, Wlodek Strupinski40, Yuri Svirko31, Simone Taioli28, Simone Taioli47, Kenneth B. K. Teo, Matteo Testi10, Flavia Tomarchio3, Mauro Tortello15, Emanuele Treossi, Andrey Turchanin48, Ester Vázquez36, Elvira Villaro, Patrick Rebsdorf Whelan19, Zhenyuan Xia39, Rositza Yakimova, Sheng Yang14, G. Reza Yazdi, Chanyoung Yim24, Duhee Yoon3, Xianghui Zhang17, Xiaodong Zhuang14, Luigi Colombo49, Andrea C. Ferrari3, Mar García-Hernández6 
Heidelberg University1, Trinity College, Dublin2, University of Cambridge3, Autonomous University of Madrid4, Université Paris-Saclay5, Spanish National Research Council6, University of Zaragoza7, University of Nottingham8, RWTH Aachen University9, Kessler Foundation10, Istituto Italiano di Tecnologia11, University of Grenoble12, Georgia Institute of Technology13, Dresden University of Technology14, Polytechnic University of Turin15, University of Zurich16, Bielefeld University17, University of Strasbourg18, Technical University of Denmark19, Swiss Federal Laboratories for Materials Science and Technology20, Ikerbasque21, University of Erlangen-Nuremberg22, Technische Universität München23, Bundeswehr University Munich24, University of Bern25, University of Patras26, Foundation for Research & Technology – Hellas27, Center for Theoretical Studies, University of Miami28, École Polytechnique Fédérale de Lausanne29, University of Ulm30, University of Eastern Finland31, Aristotle University of Thessaloniki32, University of Manchester33, Polish Academy of Sciences34, Aalto University35, University of Castilla–La Mancha36, ShanghaiTech University37, University of Exeter38, Chalmers University of Technology39, Warsaw University of Technology40, University of Trieste41, Queen Mary University of London42, Instituto Politécnico Nacional43, University of Trento44, University of the Basque Country45, Chemnitz University of Technology46, Charles University in Prague47, University of Jena48, University of Texas at Dallas49
29 Jan 2020
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
Abstract: © 2020 The Author(s). We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV-VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resourceconsuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown.

330 citations

Journal ArticleDOI
TL;DR: A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (h-BN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals, finding a high quantum yield value comparable to that of direct band-gap semiconductors.
Abstract: A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (h-BN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of $\ensuremath{\sim}50%$ is found for h-BN at 10 K comparable to that of direct band-gap semiconductors. This bright luminescence at 215 nm remains stable up to room temperature, evidencing the strongly bound character of excitons in bulk h-BN. Ab initio calculations of the exciton dispersion confirm the indirect nature of the lowest-energy exciton whose binding energy is found equal to $300\ifmmode\pm\else\textpm\fi{}50\text{ }\text{ }\mathrm{meV}$, in agreement with the thermal stability observed in luminescence. The direct exciton is found at a higher energy but very close to the indirect one, which solves the long debated Stokes shift in bulk h-BN.

86 citations

Journal ArticleDOI
22 Jun 2017
TL;DR: In this paper, micro-Raman measurements on hBN flakes made of a few atomic layers, prepared by mechanical exfoliation, were performed to define appropriate measurements conditions suitable for thin layers avoiding undesirable heating induced effects.
Abstract: Hexagonal boron nitride (hBN) has recently gained a strong interest as a strategic component in engineering van der Waals heterostructures built with two dimensional crystals such as graphene. This work reports micro-Raman measurements on hBN flakes made of a few atomic layers, prepared by mechanical exfoliation. The temperature dependence of the Raman scattering in hBN is investigated first such as to define appropriate measurements conditions suitable for thin layers avoiding undesirable heating induced effects. We further focus on the low frequency Raman mode corresponding to the rigid shearing oscillation between adjacent layers, found to be equal to 52.5 cm-1 in bulk hBN. For hBN sheets with thicknesses below typically 4 nm, the frequency of this mode presents discrete values, which are found to decrease down to 46.0(5) cm-1 for a three-layer hBN, in good agreement with the linear-chain model. This makes Raman spectroscopy a relevant tool to quantitatively determine the number of layers in ultra thin hBN sheets, below 8L.

81 citations

Journal ArticleDOI
TL;DR: In this paper, the same so-called S series in the 5.6-6 eV range has been found for various bulk and exfoliated hexagonal boron nitride (hBN) samples.
Abstract: Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6–6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals.

52 citations

Journal ArticleDOI
TL;DR: It is demonstrated that organic dye molecules are passivated and photostable when they are encapsulated inside a boron nitride nanotube (dyes@BNNT), which reduces the toxicity of the dyes and induces exceptional chemical robustness, even in harsh conditions.
Abstract: Fluorescence is ubiquitous in life science and used in many fields of research ranging from ecology to medicine. Among the most common fluorogenic compounds, dyes are being exploited in bioimaging for their outstanding optical properties from UV down to the near IR (NIR). However, dye molecules are often toxic to living organisms and photodegradable, which limits the time window for in vivo experiments. Here, it is demonstrated that organic dye molecules are passivated and photostable when they are encapsulated inside a boron nitride nanotube (dyes@BNNT). The results show that the BNNTs drive an aggregation of the encapsulated dyes, which induces a redshifted fluorescence from visible to NIR-II. The fluorescence remains strong and stable, exempt of bleaching and blinking, over a time scale longer than that of free dyes by more than 104 . This passivation also reduces the toxicity of the dyes and induces exceptional chemical robustness, even in harsh conditions. These properties are highlighted in bioimaging where the dyes@BNNT nanohybrids are used as fluorescent nanoprobes for in vivo monitoring of Daphnia Pulex microorganisms and for diffusion tracking on human hepatoblastoma cells with two-photon imaging.

27 citations


Cited by
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TL;DR: It is found that two distinct types of blinking are possible: conventional (A-type) blinking due to charging and discharging of the nanocrystal core, in which lower photoluminescence intensities correlate with shorter photolumscence lifetimes; and a second sort (B-type), in which large changes in the emission intensity are not accompanied by significant changes in emission dynamics.
Abstract: Photoluminescence blinking—random switching between states of high (ON) and low (OFF) emissivities—is a universal property of molecular emitters found in dyes, polymers, biological molecules and artificial nanostructures such as nanocrystal quantum dots, carbon nanotubes and nanowires. For the past 15 years, colloidal nanocrystals have been used as a model system to study this phenomenon. The occurrence of OFF periods in nanocrystal emission has been commonly attributed to the presence of an additional charge, which leads to photoluminescence quenching by non-radiative recombination (the Auger mechanism). However, this ‘charging’ model was recently challenged in several reports. Here we report time-resolved photoluminescence studies of individual nanocrystal quantum dots performed while electrochemically controlling the degree of their charging, with the goal of clarifying the role of charging in blinking. We find that two distinct types of blinking are possible: conventional (A-type) blinking due to charging and discharging of the nanocrystal core, in which lower photoluminescence intensities correlate with shorter photoluminescence lifetimes; and a second sort (B-type), in which large changes in the emission intensity are not accompanied by significant changes in emission dynamics. We attribute B-type blinking to charge fluctuations in the electron-accepting surface sites. When unoccupied, these sites intercept ‘hot’ electrons before they relax into emitting core states. Both blinking mechanisms can be electrochemically controlled and completely suppressed by application of an appropriate potential.

590 citations

Dissertation
30 Apr 2007
TL;DR: In this paper, the discovery of superconductivity in intercalated graphite compounds C6Yb and C6Ca was discussed and a novel technique for synthesis of these intercalates has been developed, and is presented in detail.
Abstract: This thesis concerns the discovery of superconductivity in the intercalated graphite compounds C6Yb and C6Ca. A novel technique for synthesis of these intercalates has been developed, and is presented in detail. These two materials are shown to superconduct at 6.5K and 11.5K respectively. The superconductivity is demonstrated by measurements of the magnetisation and resistivity. Initial measurements of the superconducting transition of these materials as a function of pressure shows an increase in the transition with increasing pressure.

485 citations