Author
Leslie H. Allen
Other affiliations: Cornell University, National Institute of Standards and Technology, LSI Corporation
Bio: Leslie H. Allen is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Thin film & Annealing (metallurgy). The author has an hindex of 33, co-authored 82 publications receiving 4808 citations. Previous affiliations of Leslie H. Allen include Cornell University & National Institute of Standards and Technology.
Papers published on a yearly basis
Papers
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TL;DR: The latent heat of fusion for Sn particles formed by evaporation on inert substrate with radii ranging from 5 to 50 nm has been measured directly using a novel scanning nanocalorimeter and a particle-size-dependent reduction of $\ensuremath{\Delta}{H}_{m}$ has been observed.
Abstract: For the first time, the latent heat of fusion $\ensuremath{\Delta}{H}_{m}$ for Sn particles formed by evaporation on inert substrate with radii ranging from 5 to 50 nm has been measured directly using a novel scanning nanocalorimeter. A particle-size-dependent reduction of $\ensuremath{\Delta}{H}_{m}$ has been observed. An ``excluded volume'' is introduced to describe the latent heat of fusion from the enhanced surface melting of small particles. Melting point depression has also been found by our nanocalorimetric technique.
825 citations
TL;DR: In this article, a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n−GaN (∼1017 cm−3) using an Al/Ti bilayer metallisation scheme was reported.
Abstract: We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n‐GaN (∼1017 cm−3) using an Al/Ti bilayer metallization scheme. Four different thin‐film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron‐beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 °C in a N2 ambient using rapid thermal annealing techniques. The lowest value for the specific contact resistivity of 8×10−6 Ω cm2, was obtained using Ti/Al metallization with anneals of 900 °C for 30 s. X‐ray diffraction and Auger electron spectroscopy depth profile were employed to investigate the metallurgy of contact formation.
464 citations
TL;DR: In this paper, the melting behavior of 0.1\char21{}10-nm-thick discontinuous indium films formed by evaporation on amorphous silicon nitride is investigated by an ultrasensitive thin-film scanning calorimetry technique.
Abstract: The melting behavior of 0.1\char21{}10-nm-thick discontinuous indium films formed by evaporation on amorphous silicon nitride is investigated by an ultrasensitive thin-film scanning calorimetry technique. The films consist of ensembles of nanostructures for which the size dependence of the melting temperature and latent heat of fusion are determined. The relationship between the nanostructure radius and the corresponding melting point and latent heat is deduced solely from experimental results (i.e., with no assumed model) by comparing the calorimetric measurements to the particle size distributions obtained by transmission electron microscopy. It is shown that the melting point of the investigated indium nanostructures decreases as much as 110 K for particles with a radius of 2 nm. The experimental results are discussed in terms of existing melting point depression models. Excellent agreement with the homogeneous melting model is observed.
425 citations
TL;DR: The ultrasensitive differential scanning calorimetry is used to observe the glass transition in thin (1-400 nm) spin-cast films of polystyrene, poly (2-vinyl pyridine) and poly (methyl methacrylate) on a platinum surface and it is found that there is no appreciable dependence of theGlass transition temperature over the thickness range from hundreds of nanometers down to 3 nm thick films.
Abstract: The ultrasensitive differential scanning calorimetry is used to observe the glass transition in thin (1-400 nm) spin-cast films of polystyrene, poly (2-vinyl pyridine) and poly (methyl methacrylate) on a platinum surface. A pronounced glass transition is observed even at a thickness as small as 1-3 nm. Using the high heating (20-200 K/ms) and cooling (1-2 K/ms in glass transition region) rates which are typical for this technique, we do not observe appreciable dependence of the glass transition temperature over the thickness range from hundreds of nanometers down to 3 nm thick films. The evolution of calorimetric data with film thickness is discussed in terms of broadening of transition dynamics and loss of transition contrast.
209 citations
TL;DR: In this paper, an etch rate of 8.5 A/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm.
Abstract: Reactive ion etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 A/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films after etching. Oxygen contamination has been detected from the AES profiles of etched GaN samples.
205 citations
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28 Jul 2005
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。
18,940 citations
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...
10,260 citations
7,711 citations
TL;DR: This paper introduces the localized surface plasmon resonance (LSPR) sensor and describes how its exquisite sensitivity to size, shape and environment can be harnessed to detect molecular binding events and changes in molecular conformation.
Abstract: Recent developments have greatly improved the sensitivity of optical sensors based on metal nanoparticle arrays and single nanoparticles. We introduce the localized surface plasmon resonance (LSPR) sensor and describe how its exquisite sensitivity to size, shape and environment can be harnessed to detect molecular binding events and changes in molecular conformation. We then describe recent progress in three areas representing the most significant challenges: pushing sensitivity towards the single-molecule detection limit, combining LSPR with complementary molecular identification techniques such as surface-enhanced Raman spectroscopy, and practical development of sensors and instrumentation for routine use and high-throughput detection. This review highlights several exceptionally promising research directions and discusses how diverse applications of plasmonic nanoparticles can be integrated in the near future.
6,352 citations
TL;DR: The use of nanosphere lithography for the fabrication of highly reproducible and robust SERS substrates is described and progress in applying SERS to the detection of chemical warfare agents and several biological molecules is described.
Abstract: The ability to control the size, shape, and material of a surface has reinvigorated the field of surface-enhanced Raman spectroscopy (SERS). Because excitation of the localized surface plasmon resonance of a nanostructured surface or nanoparticle lies at the heart of SERS, the ability to reliably control the surface characteristics has taken SERS from an interesting surface phenomenon to a rapidly developing analytical tool. This article first explains many fundamental features of SERS and then describes the use of nanosphere lithography for the fabrication of highly reproducible and robust SERS substrates. In particular, we review metal film over nanosphere surfaces as excellent candidates for several experiments that were once impossible with more primitive SERS substrates (e.g., metal island films). The article also describes progress in applying SERS to the detection of chemical warfare agents and several biological molecules.
2,986 citations