Lis K. Nanver

Bio: Lis K. Nanver is an academic researcher from University of Twente. The author has contributed to research in topics: Silicon & Diode. The author has an hindex of 29, co-authored 308 publications receiving 3796 citations. Previous affiliations of Lis K. Nanver include MESA+ Institute for Nanotechnology & Delft University of Technology.

Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks

Abstract: This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q>100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, ft=50 GHz) high voltage breakdown transistor (VCBO=14 V, VCEO>3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm2

Surface-passivated high-resistivity silicon substrates for RFICs

Abstract: Surface passivation of high-resistivity silicon (HRS) by amorphous silicon thin-film deposition is demonstrated as a novel technique for establishing HRS as a microwave substrate. Metal-oxide-silicon (MOS) capacitor measurements are used to characterize the silicon surface properties. An increase of the quality factor (Q) of a 10-nH spiral inductor by 40% to Q=15 and a 6.5-dB lower attenuation of a coplanar waveguide (CPW) at 17 GHz indicate the beneficial effect of the surface passivation for radio frequency (RF) and microwave applications. Regarding CPW attenuation, a nonpassivated 3000-/spl Omega//spl middot/cm substrate is equivalent to a 70-/spl Omega//spl middot/cm passivated substrate. Surface-passivated HRS, having minimum losses, a high permittivity, and a high thermal conductivity, qualifies as a close-to-ideal radio frequency and microwave substrate.

“Distortion-Free” Varactor Diode Topologies for RF Adaptivity

Abstract: Varactor diode-based circuit topologies, which can act as high-Q “distortion-free” tunable capacitive elements, are presented. These diodes are implemented in a novel ultra low-loss silicon-on-glass technology, with resulting measured Q's of over 200 at 2 GHz. The measured IM3 improvement compared to traditional single varactor tuning techniques is greater than 30 dB.

Chemical Vapor Deposition of α -Boron Layers on Silicon for Controlled Nanometer-Deep p + n Junction Formation

Abstract: Nanometer-thick amorphous boron (?-B) layers were formed on (100) Si during exposure to diborane (B2H6) in a chemical vapor deposition (CVD) system, either at atmospheric or reduced pressures, at temperatures down to 500°C. The dependence of the growth mechanism on processing parameters was investigated by analytical techniques, such as transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), in conjunction with extensive electrical characterization. In particular, devices fabricated by B deposition effectively demonstrated that p + doping of the silicon substrate can be achieved within 10 nm from the surface in a manner that is finely controlled by the B2H6 exposure conditions. High-quality, extremely ultrashallow, p + n junctions were fabricated, and their saturation current was tuned from high Schottky-like values to low deep pn junction-like values by the increasing of the deposited B layer thickness. This junction formation exhibited high selectivity, isotropy, spatial homogeneity, and compatibility with standard Si device fabrication.

A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown

Abstract: Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance R/sub TH/, critical temperature T/sub crit/ and critical current J/sub C,crit/, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20/spl deg/C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for T/sub crit/ and J/sub C,crit/ becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

Phd by thesis

Abstract: Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Handbook of Chemistry and Physics

Abstract: There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

A User’s Guide

Abstract: OUTPU T 29 OUTPU T 30 OUTPU T 31 OUTPU T 32 OUTPU T 25 OUTPU T 26 OUTPU T 27 OUTPU T 28 OUTPU T 21 OUTPU T 22 OUTPU T 23 OUTPU T 24 OUTPU T 17 OUTPU T 18 OUTPU T 19 OUTPU T 20 OUTPU T 13 OUTPU T 14 OUTPU T 15 OUTPU T 16 OUTPU T 9 OUTPU T 10 OUTPU T 11 OUTPU T 12 OUTPU T 5 OUTPU T 6 OUTPU T 7 OUTPU T 8 OUTPU T 1 OUTPU T 2 OUTPU T 3 OUTPU T 4 29 30 31 32 25 26 27 28 21 22 23 24 17 18 19 20 13 14 15 16 9