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Author

Lívia Souza Ribeiro

Bio: Lívia Souza Ribeiro is an academic researcher from University of São Paulo. The author has contributed to research in topics: Infrared spectroscopy & Fourier transform infrared spectroscopy. The author has co-authored 3 publications.

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Proceedings ArticleDOI
24 Apr 2008
TL;DR: In this article, the authors compared epitaxial layers of PbSnTe, grown high quality crystalline by Hot Wall Beam Epitaxy (HWBE) technique, directly over single crystal BaF2 wafers, p type.
Abstract: Analyzes generates by Scanning Electronic Microscopy (SEM/BSE), Fourier Transform Infrared Spectroscopy (FTIR) and X‐Ray Diffraction (XRD) were used in order to compare epitaxial layers of PbSnTe, grown high quality crystalline by Hot Wall Beam Epitaxy—HWBE technique, directly over single crystal BaF2 wafers, p type The PbSnTe/BaF2 heterostructures were analyzed electrically by Hall Effect (HE), in electrical contacts in the PbSnTe layers (Van der Pauw method), and optoeletronic by Detectivity (D), are used as thermal infrared detectors that work with the wavelength—3 μm<λ<14 μm at 77 K temperature