L
Lixin Ge
Researcher at University of Florida
Publications - 3
Citations - 380
Lixin Ge is an academic researcher from University of Florida. The author has contributed to research in topics: MOSFET & CMOS. The author has an hindex of 3, co-authored 3 publications receiving 370 citations.
Papers
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Journal ArticleDOI
Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
Lixin Ge,Jerry G. Fossum +1 more
TL;DR: In this article, a compact physics-based quantum effects model for symmetrical double-gate (DG) MOSFETs of arbitrary Si-film thickness is developed and demonstrated.
Journal ArticleDOI
Speed superiority of scaled double-gate CMOS
TL;DR: In this paper, the authors used a generic process/physics-based compact model for double-gate MOSFETs and supplemented with model-predicted on-state currents and gate capacitances for varying supply voltages (V/sub DD/).
Journal ArticleDOI
Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits
Lixin Ge,Jerry G. Fossum,Bin Liu +2 more
TL;DR: In this paper, a velocity-overshoot model is developed, implemented in metal oxide semiconductor field effect transistor (MOSFET) circuit models, verified based on measured current-voltage data and Monte Carlo-simulation results, and demonstrated in performance projections for 25 nm bulk-Si complementary metal-oxide-semiconductor (CMOS).