L
Liyuan Zhang
Researcher at Southern University of Science and Technology
Publications - 63
Citations - 2131
Liyuan Zhang is an academic researcher from Southern University of Science and Technology. The author has contributed to research in topics: Graphene & Magnetic field. The author has an hindex of 19, co-authored 57 publications receiving 1676 citations. Previous affiliations of Liyuan Zhang include Brookhaven National Laboratory & Renmin University of China.
Papers
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ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes.
TL;DR: Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/ nanowires across paired Au electrodes using dielectrophoresis to form the Schottky diode.
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Three-dimensional quantum Hall effect and metal–insulator transition in ZrTe 5
Fangdong Tang,Yafei Ren,Peipei Wang,Ruidan Zhong,John Schneeloch,Shengyuan A. Yang,Kun Yang,Patrick A. Lee,Genda Gu,Zhenhua Qiao,Liyuan Zhang +10 more
TL;DR: Evidence of the three-dimensional quantum Hall effect and a magnetic-field-driven quantum phase transition are observed in zirconium pentatelluride crystals, providing experimental evidence of the 3D QHE and a promising platform for further exploration of exotic quantum phases and transitions in 3D systems.
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Atomic force microscope local oxidation nanolithography of graphene
TL;DR: In this paper, the local oxidation nanopatterning of graphene films was demonstrated by an atomic force microscope and the technique provided a method to form insulating trenches in graphene flakes and to fabricate nanodevices with sub-nanometer precision.
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AFM local oxidation nanolithography of graphene
TL;DR: In this paper, the local oxidation nanopatterning of graphene films was demonstrated by an atomic force microscope and the technique provided a method to form insulating trenches in graphene flakes and to fabricate nanodevices with sub-nm precision.
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Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2 /Graphene/SnS2 p-g-n Junctions.
Alei Li,Alei Li,Qianxue Chen,Peipei Wang,Yuan Gan,Tailei Qi,Peng Wang,Fangdong Tang,Judy Z. Wu,Rui Chen,Liyuan Zhang,Youpin Gong +11 more
TL;DR: A novel 2D h-BN/p-MoTe2 /graphene/n-SnS2 /h-BN p-g-n junction, fabricated by a layer-by-layer dry transfer, demonstrates high-sensitivity, broadband photodetection at room temperature, suggesting that the vdW p- g-n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh-s sensitivity and broadband photonic detectors.