Louis E. Brus

Bio: Louis E. Brus is an academic researcher from Columbia University. The author has contributed to research in topics: Raman spectroscopy & Excited state. The author has an hindex of 113, co-authored 347 publications receiving 63052 citations. Previous affiliations of Louis E. Brus include Massachusetts Institute of Technology & United States Naval Research Laboratory.

Electron–electron and electron‐hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state

Abstract: We model, in an elementary way, the excited electronic states of semiconductor crystallites sufficiently small (∼50 A diam) that the electronic properties differ from those of bulk materials. In this limit the excited states and ionization processes assume a molecular‐like character. However, diffraction of bonding electrons by the periodic lattice potential remains of paramount importance in the crystallite electronic structure. Schrodinger’s equation is solved at the same level of approximation as used in the analysis of bulk crystalline electron‐hole states (Wannier excitons). Kinetic energy is treated by the effective mass approximation, and the potential energy is due to high frequency dielectric solvation by atomic core electrons. An approximate formula is given for the lowest excited electronic state energy. This expression is dependent upon bulk electronic properties, and contains no adjustable parameters. The optical f number for absorption and emission is also considered. The same model is applied to the problem of two conduction band electrons in a small crystallite, in order to understand how the redox potential of excess electrons depends upon crystallite size.

Anomalous lattice vibrations of single- and few-layer MoS2.

Abstract: Molybdenum disulfide (MoS2) of single- and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S−Mo−S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.

Fluorescence intermittency in single cadmium selenide nanocrystals

Abstract: SEMICONDUCTOR nanocrystals offer the opportunity to study the evolution of bulk materials properties as the size of a system increases from the molecular scale1,2. In addition, their strongly size-dependent optical properties render them attractive candidates as tunable light absorbers and emitters in optoelectronic devices such as light-emitting diodes3,4 and quantum-dot lasers5,6, and as optical probes of biological systems7. Here we show that light emission from single fluorescing nanocrystals of cadmium selenide under continuous excitation turns on and off intermittently with a characteristic timescale of about 0.5 seconds. This intermittency is not apparent from ensemble measurements on many nanocrystals. The dependence on excitation intensity and the change in on/off times when a passivating, high-bandgap shell of zinc sulphide encapsulates the nanocrystal8,9 suggests that the abrupt turning off of luminescence is caused by photo-ionization of the nanocrystal. Thus spectroscopic measurements on single nanocrystals can reveal hitherto unknown aspects of their photophysics.

Fluorescence intermittency in single cadmium selenide nanocrystals

Abstract: SEMICONDUCTOR nanocrystals offer the opportunity to study the evolution of bulk materials properties as the size of a system increases from the molecular scale 1,2 . In addition, their strongly size-dependent optical properties render them attractive candidates as tunable light absorbers and emitters in optoelectronic devices such as light-emitting diodes 3,4 and quantum-dot lasers 5, 6 and as optical probes of biological systems'. Here we show that light emission from single fluorescing nanocrystals of cadmium selenide under continuous excitation turns on and off intermittently with a characteristic timescale of about 0.5 seconds. This intermittency is not apparent from ensemble measurements on many nanocrystals. The dependence on excitation intensity and the change in on/off times when a passivating, high-bandgap shell of zinc sulphide encapsulates the nanocrystal 8,9 suggests that the abrupt turning off of luminescence is caused by photoionization of the nanocrystal. Thus spectroscopic measurements on single nanocrystals can reveal hitherto unknown aspects of their photophysics.

The electronic properties of graphene

Abstract: This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

Abstract: We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

Atomically thin MoS2: a new direct-gap semiconductor

Abstract: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material