L
Ludovic Goux
Researcher at Katholieke Universiteit Leuven
Publications - 221
Citations - 6661
Ludovic Goux is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Resistive random-access memory & Programmable metallization cell. The author has an hindex of 37, co-authored 216 publications receiving 5620 citations. Previous affiliations of Ludovic Goux include University of Hasselt.
Papers
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Proceedings ArticleDOI
10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation
Bogdan Govoreanu,Gouri Sankar Kar,Y. Y. Chen,Vasile Paraschiv,Stefan Kubicek,Andrea Fantini,Iuliana Radu,Ludovic Goux,Sergiu Clima,Robin Degraeve,N. Jossart,O. Richard,T. Vandeweyer,K. Seo,Paul Hendrickx,Geoffrey Pourtois,Hugo Bender,L. Altimime,Dirk Wouters,Jorge A. Kittl,Malgorzata Jurczak +20 more
TL;DR: In this paper, the smallest HfO 2 -based resistive RAM (RRAM) cell was reported, featuring a novel Hf/HfO x resistive element stack, with an area of less than 10×10 nm2, fast ns-range on/off switching times at lowvoltages and with a switching energy per bit of <0.1pJ.
Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
Journal ArticleDOI
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.
Umberto Celano,Ludovic Goux,Attilio Belmonte,Karl Opsomer,Alexis Franquet,Andreas Schulze,Christophe Detavernier,Christophe Detavernier,Olivier Richard,Hugo Bender,Malgorzata Jurczak,Wilfried Vandervorst +11 more
TL;DR: This Letter reports for the first time on the three-dimensional (3D) observation of the shape of the conductive filament and concludes that the dynamic filament-growth is limited by the cation transport.
Journal ArticleDOI
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Ludovic Goux,Piotr Czarnecki,Yang Yin Chen,Luigi Pantisano,XinPeng Wang,Robin Degraeve,Bogdan Govoreanu,Malgorzata Jurczak,Dirk Wouters,L. Altimime +9 more
TL;DR: In this paper, the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells was studied.
Journal ArticleDOI
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Yang Yin Chen,Ludovic Goux,Sergiu Clima,Bogdan Govoreanu,Robin Degraeve,Gouri Sankar Kar,Andrea Fantini,Guido Groeseneken,Dirk Wouters,Malgorzata Jurczak +9 more
TL;DR: In this paper, an endurance/retention performance tradeoff was identified on the 40 nm × 40 nm HfO2/Metal cap bipolar RRAM devices in a 1T1R configuration.