Author
Luigia Lanni
Other affiliations: Intel
Bio: Luigia Lanni is an academic researcher from Royal Institute of Technology. The author has contributed to research in topics: Silicon carbide & Integrated circuit. The author has an hindex of 15, co-authored 30 publications receiving 571 citations. Previous affiliations of Luigia Lanni include Intel.
Papers
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TL;DR: In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C.
Abstract: Successful operation of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C. Nonmonotonous temperature dependence (previously predicted by simulations but now measured) was observed for the transistor current gain; in the range -40 °C-300 °C it decreased when the temperature increased, while it increased in the range 300 °C-500 °C. Stable noise margins of ~ 1 V were measured for a 2-input OR/NOR gate operated on -15 V supply voltage from 0 °C to 500 °C for both OR and NOR output.
84 citations
TL;DR: In this article, a monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented, which is used in an inverting negative feedback amplifier configuration.
Abstract: A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature ...
69 citations
TL;DR: In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated.
Abstract: Operation up to 300 °C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or- nor gate operated on - 15 V supply voltage from 27 °C up to 300 °C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.
61 citations
TL;DR: In this article, a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 °C up to 500 °C, is demonstrated for 15-mA load current.
Abstract: In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 °C up to 500 °C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 °C–500 °C. For both line and load regulations, degradation of 50% from 25 °C to 300 °C and improvement of 50% from 300 °C to 500 °C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 °C–500 °C.
38 citations
TL;DR: Silicon carbide integrated circuits have been suggested for extreme environment operation as discussed by the authors. But the challenge of a new technology is to develop process flow, circuit models and circuit designs for extreme environments operation.
Abstract: Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for ...
32 citations
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1,146 citations
TL;DR: In this paper, the authors reviewed the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport in 4H-SiC power metal oxide Semiconductor Field Effect Transistors.
Abstract: A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.
220 citations
TL;DR: The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.
Abstract: Substitution of Si with Au and Ir in Ti3SiC2 through a solid-state diffusion process allows the synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 phases able to form Ohmic contacts with SiC stable at high temperatures under ambient air conditions.
128 citations
TL;DR: In this paper, short-term demonstrations of packaged 4H-SiC junction field effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature.
Abstract: Short-term demonstrations of packaged 4H-SiC junction field-effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature believed unprecedented for electrical operation of a semiconductor IC. The expanded temperature range should assist temperature acceleration testing/qualification of such ICs intended for long-term use in applications near 500 °C ambient, and perhaps spawn new applications. Ceramic package assembly leakage currents inhibited the determination of some intrinsic SiC device/circuit performance properties at these extreme temperatures, so it is conceivable that even higher operating temperatures might be obtained from SiC JFET ICs by employing packaging and circuit design intended/optimized for T $\ge800$ °C.
94 citations
TL;DR: In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C.
Abstract: Successful operation of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C. Nonmonotonous temperature dependence (previously predicted by simulations but now measured) was observed for the transistor current gain; in the range -40 °C-300 °C it decreased when the temperature increased, while it increased in the range 300 °C-500 °C. Stable noise margins of ~ 1 V were measured for a 2-input OR/NOR gate operated on -15 V supply voltage from 0 °C to 500 °C for both OR and NOR output.
84 citations