Luis A. Jauregui

TL;DR: It is shown that grain boundaries give a significant Raman 'D' peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

TL;DR: In this paper, single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu are studied and individual boundaries between coalescing grains affect graphene's electronic properties.

TL;DR: The SPP-based near-field spectroscopy significantly improves experimental capabilities for probing and manipulating exciton dynamics of atomically thin materials, thus opening up new avenues for realizing active metasurfaces and robust optoelectronic systems, with potential applications in information processing and communication.

TL;DR: The uniformity and high yield of the nanowires provide a promising route to make significant contributions to the manufacture of nanotechnology-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliable and a reproducible way.

TL;DR: In this paper, the intensity ratio between Raman 'D' and 'G' peaks, ID/IG (commonly used to characterize disorder in graphene), is observed to initially increase almost linearly with the number (Ne) of plasma-etching pulses, but later decreases at higher Ne values.