In response to the 2013 Update of the European Strategy for Particle Physics, the Future Circular Collider (FCC) study was launched, as an international collaboration hosted by CERN. This study covers a highest-luminosity high-energy lepton collider (FCC-ee) and an energy-frontier hadron collider (FCC-hh), which could, successively, be installed in the same 100 km tunnel. The scientific capabilities of the integrated FCC programme would serve the worldwide community throughout the 21st century. The FCC study also investigates an LHC energy upgrade, using FCC-hh technology. This document constitutes the second volume of the FCC Conceptual Design Report, devoted to the electron-positron collider FCC-ee. After summarizing the physics discovery opportunities, it presents the accelerator design, performance reach, a staged operation scenario, the underlying technologies, civil engineering, technical infrastructure, and an implementation plan. FCC-ee can be built with today’s technology. Most of the FCC-ee infrastructure could be reused for FCC-hh. Combining concepts from past and present lepton colliders and adding a few novel elements, the FCC-ee design promises outstandingly high luminosity. This will make the FCC-ee a unique precision instrument to study the heaviest known particles (Z, W and H bosons and the top quark), offering great direct and indirect sensitivity to new physics.

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FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2

http://lbk.fe.uni-lj.si/pdfs/tibt2015.pdf

Electroporation-based applications in biotechnology.

Silymarin consists of a family of flavonoids (silybin, isosilybin, silychristin, silydianin and taxifoline) commonly found in the dried fruit of the milk thistle plant Silybum marianum. Although silymarin's role as an antioxidant and hepatoprotective agent is well known, its role as an anticancer agent has begun to emerge. Extensive research within the last decade has shown that silymarin can suppress the proliferation of a variety of tumor cells (e.g., prostate, breast, ovary, colon, lung, bladder); this is accomplished through cell cycle arrest at the G1/S-phase, induction of cyclin-dependent kinase inhibitors (such as p15, p21 and p27), down-regulation of anti-apoptotic gene products (e.g., Bcl-2 and Bcl-xL), inhibition of cell-survival kinases (AKT, PKC and MAPK) and inhibition of inflammatory transcription factors (e.g., NF-kappaB). Silymarin can also down-regulate gene products involved in the proliferation of tumor cells (cyclin D1, EGFR, COX-2, TGF-beta, IGF-IR), invasion (MMP-9), angiogenesis (VEGF) and metastasis (adhesion molecules). The antiinflammatory effects of silymarin are mediated through suppression of NF-kappaB-regulated gene products, including COX-2, LOX, inducible iNOS, TNF and IL-1. Numerous studies have indicated that silymarin is a chemopreventive agent in vivo against a variety of carcinogens/tumor promoters, including UV light, 7,12-dimethylbenz(a)anthracene (DMBA), phorbol 12-myristate 13-acetate (PMA) and others. Silymarin has also been shown to sensitize tumors to chemotherapeutic agents through down-regulation of the MDR protein and other mechanisms. It binds to both estrogen and androgen receptors, and down-regulates PSA. In addition to its chemopreventive effects, silymarin exhibits antitumor activity against human tumors (e.g., prostate and ovary) in rodents. Various clinical trials have indicated that silymarin is bioavailable and pharmacologically safe. Studies are now in progress to demonstrate the clinical efficacy of silymarin against various cancers.

Anticancer potential of silymarin: from bench to bed side.

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction, and chemically inert phases and coatings, e.g., for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes use of PBII and PBIID to alter surfaces of or produce coatings on surgical implants and other biomedical devices. With limitations, also nonconducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few electron volts up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process nonflat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.

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Plasma-based ion implantation and deposition: a review of physics, technology, and applications

This paper introduces a novel modular multilevel series/parallel converter that allows switching modules dynamically not only in series, as in the traditional modular multilevel converter (M2C), but also in parallel. As in M2C, the semiconductor voltages do not exceed the module capacitor voltage for any module state. While the new topology is a generalization of M2C and could, therefore, be operated identically to it, the additional states provide degrees of freedom that the controller can dynamically employ to achieve several advantages. Whereas in M2C many modules are bypassed if the instantaneous converter voltage is lower than the system's peak voltage, the parallel connectivity enables these modules to contribute to the current load, thus reducing conduction losses. In addition, the parallel configuration of modules can be used for balancing the modules' state of charge (SOC). The parallelization losses are moderate or negligible, dependent on the switching rate. Since the parallel connection of capacitors can ensure balancing, it enables stable operation of a multilevel converter without the need for monitoring the module SOCs. While such economical control hardware may be appropriate for low-power systems, we also present more sophisticated control that uses the additional degrees of freedom to minimize losses. Finally, we point to further extensions of the circuit topology to multipole module connectivity that could enable additional functionality and applications.

Modular Multilevel Converter With Series and Parallel Module Connectivity: Topology and Control

A generalized circuit topology for bipolar or unipolar high voltage repetitive pulse power applications is proposed. This circuit merges the negative and positive solid state Marx modulator concepts, which take advantage of the intensive use of semiconductor devices to increase the performance of the original dissipative Marx modulators. The flexibility of the proposed modular circuit enables the operation with negative and/or positive pulses, selectable duty cycles, frequencies and relaxation times between the positive and negative pulse. Additionally, the switching topology enables the discharge of the parasitic capacitances after each pulse, allowing the use of capacitive loads, and the clamping of inductive loads, recovering the reset energy back to the main capacitors. Analysis of efficiency and power loss will be addressed, as well as experimental details for different conditions based on laboratory prototype, with 1200 volt Insulated Gate Bipolar Transistors (IGBT), diodes, and 4.5 muF capacitors.

Generalized solid-state marx modulator topology

The analysis of a solid-state Marx modulator (S2M2) topology, which have been developed for repetitive high-voltage (in kilovolts) applications, needing positive or negative rectangular pulses, is presented. The proposed topology benefits from the intensive use of semiconductors, allowing kilohertz operation with different load conditions. In addition to resistive loads, capacitive loads can be discharged to ground after each pulse and inductive loads can be clamped and the energy recovered to the main capacitors. Furthermore, the presented topology and proposed switching sequence enables the use of typical half-bridge semiconductor structures currently integrated in modular packages, which is advantageous for circuit assembling and triggering the semiconductors. Discussion on the advantages and limitation will be given. Finally, experimental results of some modulator features will be presented.

Repetitive High-Voltage Solid-State Marx Modulator Design for Various Load Conditions

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 μs pulse width and 5 μs relaxation time into resistive, capacitive, and inductive loads.

Marx-Type Solid-State Bipolar Modulator Topologies: Performance Comparison

The intensive use of semiconductor devices enabled the development of a repetitive high-voltage pulse-generator topology from the dc voltage-multiplier (VM) concept. The proposed circuit is based on an odd VM-type circuit, where a number of dc capacitors share a common connection with different voltage ratings in each one, and the output voltage comes from a single capacitor. Standard VM rectifier and coupling diodes are used for charging the energy-storing capacitors, from an ac power supply, and two additional on/off semiconductors in each stage, to switch from the typical charging VM mode to a pulse mode with the dc energy-storing capacitors connected in series with the load. Results from a 2-kV experimental prototype with three stages, delivering a 10- s pulse with a 5-kHz repetition rate into a resistive load, are discussed. Additionally, the proposed circuit is compared against the solid-state Marx generator topology for the same peak input and output voltages.

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Luis Redondo

Papers

Generalized solid-state marx modulator topology

Repetitive High-Voltage Solid-State Marx Modulator Design for Various Load Conditions

Marx-Type Solid-State Bipolar Modulator Topologies: Performance Comparison

A DC Voltage-Multiplier Circuit Working as a High-Voltage Pulse Generator

Control of predators in industrial scale microalgae cultures with Pulsed Electric Fields