Lutz Geelhaar

TL;DR: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths, and the transistors displayed p-type behaviour, sustained current densities, and on/off current ratios.

TL;DR: In this paper, the authors have shown that the Ni seeds can cause more basal-plane stacking faults and their photoluminescence is weaker than the catalyst-free Ni seeds, which can be explained as effects of the catalyst Ni seeds.

TL;DR: In this paper, the formation mechanisms of epitaxial GaN nanowires grown within a self-induced approach by molecular-beam epitaxy have been investigated at the onset of the nucleation process by combining in situ reflection high-energy electron-diffraction measurements and ex situ high-resolution transmission electron microscopy imaging.

TL;DR: On Si(1 1 1 1) and Si(0 0 1), GaN nanowires (NWs) form in a self-induced way without the need for any external material as discussed by the authors.

TL;DR: In this article, the formation mechanisms of GaN nanowires grown on a Si$x$N${y}$ amorphous interlayer within a self-induced approach by molecular beam epitaxy have been investigated by combining in situ reflection high-energy electron-diffraction measurements with ex situ high-resolution transmission electron microscopy imaging.