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Lynn A. Boatner

Researcher at Oak Ridge National Laboratory

Publications -  667
Citations -  24016

Lynn A. Boatner is an academic researcher from Oak Ridge National Laboratory. The author has contributed to research in topics: Ion implantation & Thin film. The author has an hindex of 72, co-authored 661 publications receiving 22536 citations. Previous affiliations of Lynn A. Boatner include École Normale Supérieure & University of Tennessee.

Papers
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Wide band gap ferromagnetic semiconductors and oxides

TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.
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Chemically sensitive structure-imaging with a scanning transmission electron microscope

TL;DR: In this paper, a high-angle detector in a scanning transmission electron microscope was used to obtain high atomic-number contrast for single crystals of the high-transition-temperature superconductors YBa2Cu3O7-x and ErBa2cu3O 7-x.
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Advances in wide bandgap materials for semiconductor spintronics

TL;DR: In this article, the authors summarize recent progress in dilute magnetic semiconductors (DMS) such as (Ga, Mn)N, (Ga and Mn)P, (Zn, Mn), O, and SiGeN2 exhibiting room temperature ferromagnetic properties.
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Ferromagnetism in Mn-implanted ZnO:Sn single crystals

TL;DR: In this article, the magnetic properties of Mn-implanted n-type ZnO single crystals that are codoped with Sn were investigated, and it was shown that the Mn concentration to 5 at.
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STM study of the geometric and electronic structure of ZnO(0001)-Zn, (0001̄)-O, (101̄0), and (112̄0) surfaces

TL;DR: In this article, structural models for the different surfaces of ZnO surfaces are proposed and related to the stability and reactivity of the surfaces, based on these results, structural models are proposed.