Author
M. A. Afifi
Bio: M. A. Afifi is an academic researcher from Ain Shams University. The author has contributed to research in topics: Thin film & Amorphous solid. The author has an hindex of 2, co-authored 2 publications receiving 52 citations.
Papers
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TL;DR: In this article, the electrical and switching properties of InSe thin films have been studied and it was found that the dark electrical resistivity decreases with an increase in film thickness and temperature.
47 citations
Journal Article•
5 citations
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TL;DR: In this article, the currentvoltage characteristic in the OFF-state and switching phenomenon in Ge 20 M 75 Bi 5 (M S, Se or Te) chalcogenide semiconductor thin films was investigated.
124 citations
TL;DR: In this article, the effects of adding thallium to both amorphous GeSe2 and GeSe4 results in decreasing the values of the threshold electric field, the activation energy of switching, as well as the thermal activation energy.
87 citations
TL;DR: A review of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces, is presented in this article.
Abstract: A review is presented of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces. The majority of studies involve the deposition of thermodynamic phases of composition ME and M2E3 (MGa, In; ES, Se, Te), however, MOCVD allows for the growth of either high-pressure (tetragonal InS) or non-thermodynamic phases (metastable cubic phases of GaS and InSe). Based on the results to date, a series of goals for molecular control over the structure of deposited films is discussed.
62 citations
TL;DR: The effect of γ-irradiation on optical and electrical properties of amorphous and polycrystalline Se1−xTex (0.211 0.407) was studied in this article.
57 citations
46 citations