M. Drescher

Bio: M. Drescher is an academic researcher from GlobalFoundries. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.

IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF

Abstract: Highlights from Silicon Device Physics, material sciences and electrical engineering are among the first results to be presented from GFs subcontracts in the IPCEI-project, namely a reconfigurable FET compatible with 22-FDX-technology, a CMOS compatible new material Si doped HfO 2 for electrocaloric/ pyroelectric effects on chip, modelling of the 22FDX devices in the higher GHz range and first 5G Dual Band transceiver blocks designed in 22FDX

Empirical Large-Signal Modeling of mm-Wave FDSOI CMOS Based on Angelov Model

Abstract: This article presents a systematic empirical modeling approach in fully depleted silicon-on-insulator (FDSOI) CMOS for large-signal simulation in power amplifier applications. The model is constructed from multibias S-parameter measurements up to 67 GHz. The frequency dispersions in transconductance and output conductance are addressed by two independent radio frequency (RF) current sources. Angelov’s current formula is modified to adapt to the FDSOI transistors. Load-pull measurements are performed for the large-signal verification in a non-50- $\Omega $ environment. The model accurately predicts the nonlinear characteristics of the device under test and the harmonic components. The time-domain waveforms also show excellent agreement to the simulation.

An 80 GHz Power Amplifier with 17.4 dBm Output Power and 18 % PAE in 22 nm FD-SOI CMOS for Binary-Phase Modulated Radars

Abstract: This work presents a power amplifier operating from 75 GHz to 85 GHz and integrated with a binary phase modulator in a 22 nm FD-SOI technology. The circuit can serve directly as a transmitter in a 76 GHz to 81 GHz binary phase modulation multiple-input-multiple-output frequency-modulated continuous-wave (BPM-MIMO-FMCW) radar system. Measurements of the fabricated prototypes show a peak gain of 21.7 dB and a binary phase control of 180° ± 2 ° from 60 GHz to 100 GHz. From 75 GHz to 85 GHz the maximum output power is 17.4 dBm in saturation and 14.6 dBm at 1dB-compression-point with a peak power added efficiency (PAE) of 18 %. To the best knowledge of the authors, this is the first prototype of such a transmitter for 76 GHz to 81 GHz BPM-MIMO-FMCW radars in a 22 nm technology. It offers the best combination of power gain, output power, PAE and bandwidth compared to the state of the art for CMOS power amplifiers around 80 GHz and implemented in deeply-scaled technologies with gate length below 40 nm.