Author
M. E. Levinshteĭn
Bio: M. E. Levinshteĭn is an academic researcher. The author has contributed to research in topics: Silicon carbide & Semiconductor. The author has an hindex of 5, co-authored 6 publications receiving 1644 citations.
Topics: Silicon carbide, Semiconductor, Materials science, Nitride, Diamond
Papers
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Book•
01 Jan 2001
TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Abstract: Contributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si-1-xGe-x) (F. Schaffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.
1,556 citations
Book•
01 Jan 1996
TL;DR: In this article, Yu A. Levinshtein and S.E. Goldberg discuss the importance of diversity in the context of women's empowerment and their role in women empowerment.
Abstract: Si, M.E. Levinshtein and S. Rumyantsev Ge, L.E. Vorob'ev C (diamond), G. Gindenblat and P. Schmidt GaAs, M.E. Levinshtein and S. Rumyantsev GaP, Yu A. Goldberg GaSb, A. Ya Vul' InAs, Maya P. Mikhaylova InP, Natalya M. Schmidt InSb, Yu A. Goldberg.
77 citations
Book•
01 Jan 2006
TL;DR: Growth of SiC Substrates (A Powell et al. as mentioned in this paper ) and Deep Level Defects in Silicon Carbide (A A Lebedev) Silicon carbide Junction Field Effect Transistors (D Stephani & P Friedrichs) SiC BJTs (T P Chow & A K Agarwal).
Abstract: Growth of SiC Substrates (A Powell et al.) Deep Level Defects in Silicon Carbide (A A Lebedev) Silicon Carbide Junction Field Effect Transistors (D Stephani & P Friedrichs) SiC BJTs (T P Chow & A K Agarwal).
35 citations
Book•
01 Jan 1999
TL;DR: The "Handbook Series on Semiconductor Parameters" as discussed by the authors consists of five volumes and includes data on the most popular semiconductor materials, including ternary and quarternary A3B5.
Abstract: "Handbook Series on Semiconductor Parameters" consists of five volumes and includes data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. This volume contains data on ternary and quarternary A3B5 semiconductors.
29 citations
Book•
01 Jan 1997
TL;DR: Guk et al. as mentioned in this paper proposed a method for transmutation tampering of Semiconductors by Charged Particles (V. Kozlovskii and L. Zakharenkov).
Abstract: Introduction to Semiconductor Technology (E. Guk & N. Shmidt). Transmutation Doping of Semiconductors by Charged Particles (V. Kozlovskii & L. Zakharenkov). Polymer Diffusants in Semiconductor Technology (E. Guk, et al.). Rare--Earth Elements in the Technology of III--V Compounds (L. Zakharenkov, et al.). Intrinsic Point Defect Engineering in Silicon High--Voltage Power Device Technology (N. Sobolev). Isovalent Impurity Doping of Direct--Gap III--V Semiconductor Layers (V. Chaldyshev & S. Novikov). Surface Passivation of III--V Compounds by Inorganic Dielectrics and Polyimides (A. Gorelenok, et al.). Precision Profiling of Semiconductor Surfaces by Photochemical Etching (D. Goryachev, et al.). Index.
12 citations
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TL;DR: ShengBTE is a software package for computing the lattice thermal conductivity of crystalline bulk materials and nanowires with diffusive boundary conditions based on a full iterative solution to the Boltzmann transport equation.
1,834 citations
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...
871 citations
TL;DR: The EPW (E lectron-P honon coupling using Wannier functions) as discussed by the authors software is a Fortran-90 code that uses density-functional perturbation theory and maximally localized WANier functions for computing electron-phonon couplings and related properties in solids accurately and efficiently.
789 citations
Sandia National Laboratories1, University of California, Davis2, Massachusetts Institute of Technology3, Cornell University4, United States Army Research Laboratory5, Ohio State University6, University of California, Santa Barbara7, Boston University8, North Carolina State University9, Purdue University10, Georgia Institute of Technology11, Michigan State University12, Air Force Research Laboratory13, National Institute of Information and Communications Technology14, University of South Carolina15, United States Naval Research Laboratory16, Arizona State University17, University of Illinois at Urbana–Champaign18, Vanderbilt University19
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Abstract: J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons
785 citations
TL;DR: In this article, the surface plasmons (SPs) have attracted much attentions because optical properties can be greatly enhanced by coupling between SPs and the multiple quantum wells (MQWs) in light-emitting diodes(LEDs).
Abstract: Surface plasmons (SPs) have attracted much attentions because optical properties can be greatly enhanced by coupling between SPs and the multiple quantum wells(MQWs) in light-emitting diodes(LEDs). We demonstrate the SP enhanced InGaN/GaN MQW blue LED with an Ag nanoparticle layer located underneath the MQWs. An enhancement of 32.2% of optical output power of the LED was observed at an input current of 100 mA. The time resolvedphotoluminescence(PL) result showed that the PL decay time of the LED with Ag nanoparticles was significantly decreased compared to that of the LED without Ag nanoparticles, indicating that the spontaneous emission rate was increased by the energy transfer between the QW light emitter and the SP of Ag nanoparticle. This result shows that the Ag nanoparticles can be used to greatly increase the internal quantum efficiency of InGaN/GaN MQW blue LED through the coupling of excitons in MQWs and SPs in Ag nanoparticles.
468 citations