M. Ettenberg

Bio: M. Ettenberg is an academic researcher from City University of New York. The author has contributed to research in topics: Electronic circuit & Amplifier. The author has an hindex of 2, co-authored 2 publications receiving 409 citations.

A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers

Abstract: A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data. The harmonic-balance technique is used to develop the FET RF load-pull characteristics in an amplifier configuration under large-signal operation. Computed and experimental load-pull results show good agreement.

A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers

Abstract: A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data The harmonic balance technique is used to develop the FET rf load-pull characteristics in an amplifier configuration under large signal operation Computed and experimental load-pull results show good agreement

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Abstract: Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled with high breakdown voltages, have opened up the possibilities for highly efficient power amplifiers (PAs) exploiting the principles of waveform engineered designs. This paper summarizes the unique advantages of GaN HEMTs compared to other power transistor technologies, with examples of where such features have been exploited. Since RF power densities of GaN HEMTs are many times higher than other technologies, much attention has also been given to thermal management-examples of both commercial “off-the-shelf” packaging as well as custom heat-sinks are described. The very desirable feature of having accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are emphasized with a number of circuit design examples. GaN HEMT technology has been a major enabler for both very broadband high-PAs and very high-efficiency designs. This paper describes examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, Class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing.

A new empirical nonlinear model for HEMT and MESFET devices

Abstract: A large-signal model for HEMTs and MESFETs, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances, is proposed. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different delta -doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled DC and S-parameters are compared and found to coincide well. >

Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data

Abstract: This paper describes a new, general and accurate, large signal GaAs FET model for nonlinear (e.g. harmonic balance) circuit simulation, its fast and unambiguous construction (model generation) by explicit calculations applied to the raw device data, and the adaptive, automated data acquisition system used to characterize the device. The model implementation in a harmonic balance simulator, the model generation procedure, and the automated data acquisition system form an efficient, practical, commercially available package. for state-of-the-art nonlinear circuit design.

Modeling and Characterization of RF and Microwave Power FETs

Abstract: © Cambridge University Press 2007 and Cambridge University Press, 2009.This 2007 book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

An improved GaAs MESFET model for SPICE

Abstract: A SPICE model for modeling GaAs MESFET devices more accurately is discussed. In particular, small-signal parameters are accurately modeled over a wide range of bias conditions. These results were achieved by modifying the model equations of H. Statz et al. (see IEEE Trans. Electron. Devices, vol.3, no.2, p.160-9, 1987) to better represent the variation of I/sub ds/ as a function of the applied voltage. The model applies over a large range of pinch-off voltages, allows size scaling of devices, and is suited for modeling R/sub ds/ changes with frequency. The Statz equations are used to represent diode characteristics and capacitive components of the model. >