Leu-M

The paper critically reviews the state of the art in the field of experimental techniques possible to be applied to the study of conductometric gas sensors based on semiconducting metal oxides. The used assessment criteria are subordinated to the proposed R&D approach, which focuses on the study, and subsequent modelling, of sensors’ performance in realistic operation conditions by means of a combination of phenomenological and spectroscopic techniques. With this viewpoint, the paper presents both the to-date achievements and shortcomings of different experimental techniques, describes – by using selected examples – how the proposed approach can be used and proposes a set of objectives for the near future.

Metal oxide-based gas sensor research: How to?

Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition.

https://www.mdpi.com/1424-8220/10/6/5469/pdf

Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

Electrochromic (EC) materials are able to change their optical properties, reversibly and persistently, by the application of an electrical voltage. These materials can be integrated in multilayer devices capable of modulating the optical transmittance between widely separated extrema. We first review the recent literature on inorganic EC materials and point out that today's research is focused on tungsten oxide (colouring under charge insertion) and nickel oxide (colouring under charge extraction). The properties of thin films of these materials are then discussed in detail with foci on recent results from two comprehensive investigations in the authors' laboratory. A logical exposition is obtained by covering, in sequence, structural features, thin film deposition (by sputtering), electronic band structure, and ion diffusion. A novel conceptual model is given for structural characteristics of amorphous W oxide films, based on notions of defects in the ideal amorphous state. It is also shown that the conduction band density of states is obtainable from simple electrochemical chronopotentiometry. Ion intercalation causes the charge-compensating electrons to enter localized states, implying that the optical absorption underlying the electrochromism can be described as ensuing from transitions between occupied and empty localized conduction band states. A fully quantitative theory of such transitions is not available, but the optical absorption can be modeled more phenomenologically as due to a superposition of transitions between different charge states of the W ions (6+, 5+, and 4+). The Ni oxide films were found to have a porous structure comprised of small grains. The data are consistent with EC coloration being a surface phenomenon, most likely confined to the outer parts of the grains. Initial electrochemical cycling was found to transform hydrated Ni oxide into hydroxide and oxy-hydroxide phases on the grain surfaces. Electrochromism in thus stabilized films is consistent with reversible changes between Ni hydroxide and oxy-hydroxide, in accordance with the Bode reaction scheme. An extension of this model is put forward to account for changes of NiO to Ni2O3. It was demonstrated that electrochromism is associated solely with proton transfer. Data on chemical diffusion coefficients are interpreted for polycrystalline W oxide and Ni oxide in terms of the lattice gas model with interaction. The later part of this review is of a more technological and applications oriented character and is based on the fact that EC devices with large optical modulation can be accomplished essentially by connecting W-oxide-based and Ni-oxide-based films through a layer serving as a pure ion conductor. Specifically, we treat methods to enhance the bleached-state transmittance by mixing the Ni oxide with other oxides characterized by wide band gaps, and we also discuss pre-assembly charge insertion and extraction by facile gas treatments of the films, as well as practical device manufacturing and device testing. Here the emphasis is on novel flexible polyester-foil-based devices. The final part deals with applications with emphasis on architectural “smart” windows capable of achieving improved indoor comfort jointly with significant energy savings due to lowered demands for space cooling. Eyewear applications are touched upon as well.

/pdf/electrochromics-for-smart-windows-thin-films-of-tungsten-aw0rai8h60.pdf

Electrochromics for smart windows: thin films of tungsten oxide and nickel oxide, and devices based on these

Xin Zhou,†,‡ Songyi Lee,† Zhaochao Xu,* and Juyoung Yoon*,† †Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 120-750, Republic of Korea ‡Research Center for Chemical Biology, Department of Chemistry, Yanbian University, Yanjii 133002, People’s Republic of China Key Laboratory of Separation Science for Analytical Chemistry, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Shahekou, Dalian, Liaoning, People’s Republic of China

Recent Progress on the Development of Chemosensors for Gases.

Characterization of copper oxide thin films deposited by the thermal evaporation of cuprous oxide (Cu2O)

Optical properties of hafnium oxide thin films and their application in energy-efficient windows

Optical properties of iron oxide (α-Fe2O3) thin films deposited by the reactive evaporation of iron

Thin films of gallium oxide were deposited by electron-beam evaporation on unheated substrates. Samples were deposited either without oxygen, or under an oxygen partial pressure of 5×10−4 mbar. The films were amorphous. Films deposited with oxygen were stoichiometric, whereas those deposited without oxygen were substoichiometric. The optical properties of the films were derived from measurements, at normal incidence, of transmittance and reflectance. Films deposited without oxygen had higher values of the refractive index and extinction coefficient. The energy gaps were 5.04 and 4.84 eV for films deposited with and without oxygen, respectively.

M.F. Al-Kuhaili

Papers

Characterization of copper oxide thin films deposited by the thermal evaporation of cuprous oxide (Cu2O)

Optical properties of hafnium oxide thin films and their application in energy-efficient windows

Optical properties of iron oxide (α-Fe2O3) thin films deposited by the reactive evaporation of iron

Optical properties of gallium oxide films deposited by electron-beam evaporation

Dielectric/Ag/dielectric coated energy-efficient glass windows for warm climates