M. Haugk

Bio: M. Haugk is an academic researcher from Chemnitz University of Technology. The author has contributed to research in topics: Vacancy defect & Dislocation. The author has an hindex of 15, co-authored 28 publications receiving 3788 citations. Previous affiliations of M. Haugk include University of Paderborn.

Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties

Abstract: We outline details about an extension of the tight-binding (TB) approach to improve total energies, forces, and transferability. The method is based on a second-order expansion of the Kohn-Sham total energy in density-functional theory (DFT) with respect to charge density fluctuations. The zeroth order approach is equivalent to a common standard non-self-consistent (TB) scheme, while at second order a transparent, parameter-free, and readily calculable expression for generalized Hamiltonian matrix elements may be derived. These are modified by a self-consistent redistribution of Mulliken charges (SCC). Besides the usual ``band structure'' and short-range repulsive terms the final approximate Kohn-Sham energy additionally includes a Coulomb interaction between charge fluctuations. At large distances this accounts for long-range electrostatic forces between two point charges and approximately includes self-interaction contributions of a given atom if the charges are located at one and the same atom. We apply the new SCC scheme to problems where deficiencies within the non-SCC standard TB approach become obvious. We thus considerably improve transferability.

Deep acceptors trapped at threading-edge dislocations in gan

Abstract: Local-density-functional methods are used to examine the behavior of the oxygen defect, gallium vacancy, and related defect complexes trapped at threading-edge dislocations in GaN. These defects are found to be particularly stable at the core of the dislocation where oxygen sits twofold coordinated in a bridge position. VGa-ON is found to be a deep double acceptor, VGa-(O,N)2 is a deep single acceptor, and VGa-(ON)3 at the dislocation core is electrically inactive. We suggest that the first two defects are responsible for a deep acceptor level associated with the midgap yellow luminescence band. © 1998 The American Physical Society.

Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes

Abstract: Local density–functional methods are used to examine the behavior of O and O-related defect complexes on the walls of nanopipes in GaN We find that O has a tendency to segregate to the (1010) surface and identify the gallium vacancy surrounded by three oxygen impurities [VGa–(ON)3] to be a particularly stable and electrically inert complex We suggest that during Stranski–Krastanow growth, when interisland spaces shrink, these defects reach a critical concentration beyond which further growth is prevented and nanopipes are formed

Stability of large vacancy clusters in silicon

Abstract: Using a density-functional-based tight-binding method we investigate the stability of various vacancy clusters up to a size of 17 vacancies. Additionally, we compute the positron lifetimes for the most stable structures to compare them to experimental data. A simple bond-counting model is extended to take into account the formation of new bonds. This yields a very good agreement with the explicitly calculated formation energies of the relaxed structures for ${V}_{6}$ to ${V}_{14}.$ The structures, where the vacancies form closed rings, such as ${V}_{6}$ and ${V}_{10},$ are especially stable against dissociation. For these structures, the calculated dissociation energies are in agreement with experimentally determined annealing temperatures and the calculated positron lifetimes are consistent with measurements.

Structures, Energetics and Electronic Properties of Complex III—V Semiconductor Systems

Abstract: A parallel implementation of the selfconsistent-charge density-functional based tight-binding (SCC-DFTB) method is used to examine large scale structures in III—V semiconductors We firstly describe the parallel implementation of the method and its efficiency We then turn to applications of the parallel code to complex GaAs systems The geometries and energetics of different models for the √19 × √19 reconstruction at the (1-1-1-) surface are investigated A structure containing hexagonal rings of As at the surface consistent with STM experiments is found to be stable under Ga-rich growth conditions We then examine voids in the bulk material which are mainly caused by the movement of dislocations Void clusters of 12 missing atoms are found to be energetically favorable This is in very good agreement with recent positron annihilation measurements Additionally, we investigate the diffusion of C in p-type material and suggest a diffusion path with an activation energy of less than 1 eV which is consistent with experimental studies Finally, focusing on GaN we provide atomistic insight into line defects in wurtzite GaN threading along the growing c-axis We highlight the stability and electronic properties of screw and edge dislocations, discuss reasons for the formation of nanopipes and relate the yellow luminescence observed in highly defected materials to deep acceptors, VGa and VGa–(ON)n, trapped at threading edge dislocations

CHARMM: the biomolecular simulation program.

Abstract: CHARMM (Chemistry at HARvard Molecular Mechanics) is a highly versatile and widely used molecu- lar simulation program. It has been developed over the last three decades with a primary focus on molecules of bio- logical interest, including proteins, peptides, lipids, nucleic acids, carbohydrates, and small molecule ligands, as they occur in solution, crystals, and membrane environments. For the study of such systems, the program provides a large suite of computational tools that include numerous conformational and path sampling methods, free energy estima- tors, molecular minimization, dynamics, and analysis techniques, and model-building capabilities. The CHARMM program is applicable to problems involving a much broader class of many-particle systems. Calculations with CHARMM can be performed using a number of different energy functions and models, from mixed quantum mechanical-molecular mechanical force fields, to all-atom classical potential energy functions with explicit solvent and various boundary conditions, to implicit solvent and membrane models. The program has been ported to numer- ous platforms in both serial and parallel architectures. This article provides an overview of the program as it exists today with an emphasis on developments since the publication of the original CHARMM article in 1983.

Electronic Structure: Basic Theory and Practical Methods

Abstract: Preface Acknowledgements Notation Part I. Overview and Background Topics: 1. Introduction 2. Overview 3. Theoretical background 4. Periodic solids and electron bands 5. Uniform electron gas and simple metals Part II. Density Functional Theory: 6. Density functional theory: foundations 7. The Kohn-Sham ansatz 8. Functionals for exchange and correlation 9. Solving the Kohn-Sham equations Part III. Important Preliminaries on Atoms: 10. Electronic structure of atoms 11. Pseudopotentials Part IV. Determination of Electronic Structure, The Three Basic Methods: 12. Plane waves and grids: basics 13. Plane waves and grids: full calculations 14. Localized orbitals: tight binding 15. Localized orbitals: full calculations 16. Augmented functions: APW, KKR, MTO 17. Augmented functions: linear methods Part V. Predicting Properties of Matter from Electronic Structure - Recent Developments: 18. Quantum molecular dynamics (QMD) 19. Response functions: photons, magnons ... 20. Excitation spectra and optical properties 21. Wannier functions 22. Polarization, localization and Berry's phases 23. Locality and linear scaling O (N) methods 24. Where to find more Appendixes References Index.

First-principles calculations for defects and impurities: Applications to III-nitrides

Abstract: First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be a...

The Atomic Simulation Environment - A Python library for working with atoms

Abstract: The Atomic Simulation Environment (ASE) is a software package written in the Python programming language with the aim of setting up, steering, and analyzing atomistic simula- tions. In ASE, tasks are fully scripted in Python. The powerful syntax of Python combined with the NumPy array library make it possible to perform very complex simulation tasks. For example, a sequence of calculations may be performed with the use of a simple "for-loop" construction. Calculations of energy, forces, stresses and other quantities are performed through interfaces to many external electronic structure codes or force fields using a uniform interface. On top of this calculator interface, ASE provides modules for performing many standard simulation tasks such as structure optimization, molecular dynamics, handling of constraints and performing nudged elastic band calculations.

QM/MM Methods for Biomolecular Systems

Abstract: Combined quantum-mechanics/molecular-mechanics (QM/MM) approaches have become the method of choice for modeling reactions in biomolecular systems. Quantum-mechanical (QM) methods are required for describing chemical reactions and other electronic processes, such as charge transfer or electronic excitation. However, QM methods are restricted to systems of up to a few hundred atoms. However, the size and conformational complexity of biopolymers calls for methods capable of treating up to several 100,000 atoms and allowing for simulations over time scales of tens of nanoseconds. This is achieved by highly efficient, force-field-based molecular mechanics (MM) methods. Thus to model large biomolecules the logical approach is to combine the two techniques and to use a QM method for the chemically active region (e.g., substrates and co-factors in an enzymatic reaction) and an MM treatment for the surroundings (e.g., protein and solvent). The resulting schemes are commonly referred to as combined or hybrid QM/MM methods. They enable the modeling of reactive biomolecular systems at a reasonable computational effort while providing the necessary accuracy.