M
M. Hermann
Researcher at Technische Universität München
Publications - 33
Citations - 2295
M. Hermann is an academic researcher from Technische Universität München. The author has contributed to research in topics: Epitaxy & Wurtzite crystal structure. The author has an hindex of 18, co-authored 33 publications receiving 2185 citations.
Papers
More filters
Journal ArticleDOI
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
Oliver Ambacher,Jacek A. Majewski,C. R. Miskys,A. Link,M. Hermann,Martin Eickhoff,Martin Stutzmann,Fabio Bernardini,Vincenzo Fiorentini,V. Tilak,B Schaff,L.F. Eastman +11 more
TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter
Journal ArticleDOI
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
TL;DR: In this paper, the pH-sensitivity of GaN surfaces in electrolyte solutions has been determined, showing that the native metal oxide on the III-nitride surface is responsible for pH sensitivity.
Journal ArticleDOI
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications
Martin Eickhoff,J. Schalwig,G. Steinhoff,O. Weidemann,L. Görgens,R. Neuberger,M. Hermann,Barbara Baur,Gerhard Müller,Oliver Ambacher,Martin Stutzmann +10 more
TL;DR: In this paper, the piezoresistive effect in piezoelectric AlGaN layers is investigated and the dependence of the gauge factor on the Al content is attributed to the influence of strain induced piezOElectric fields.
Journal ArticleDOI
AlN/diamond heterojunction diodes
C. R. Miskys,Jose A. Garrido,C. E. Nebel,M. Hermann,Oliver Ambacher,Martin Eickhoff,Martin Stutzmann +6 more
TL;DR: In this article, an aluminum nitride/diamond p-n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond.
Journal ArticleDOI
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
Oliver Ambacher,Martin Eickhoff,A. Link,M. Hermann,Martin Stutzmann,Fabio Bernardini,Vincenzo Fiorentini,Y. Smorchkova,James S. Speck,Umesh K. Mishra,William J. Schaff,V. Tilak,L.F. Eastman +12 more
TL;DR: In this paper, a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases are presented.