M.J. Carter

Bio: M.J. Carter is an academic researcher from Northumbria University. The author has contributed to research in topics: Annealing (metallurgy) & Thin film. The author has an hindex of 9, co-authored 12 publications receiving 737 citations.

Formation of a stable ohmic contact to CdTe thin films through the diffusion of P from Ni-P

Abstract: Thin films of CdTe used in electronic devices often have problems with electrical contacts. This is due to the non-availability of a contacting material with a large work function for proper matching with p-CdTe. Moreover, the method of doping the thin film is the real problem. There are several possible solutions in this connection, one of which is the formation of a p+ layer on the CdTe surface by the reaction or indiffusion of dopant materials. Another approach is to engineer the barrier height prior to the metal contact deposition by depositing a layer of Cu-doped ZnTe onto the CdTe. However, all of the above methods have their own limitations. In this paper a method is presented which can overcome these limitations. Using an autocatalytic reduction process, NbP composite material has been deposited successfully on the p-CdTe surface. On annealing at an optimum temperature of 250 degrees C, the contact resistivity comes down to 0.1-0.08 Omega cm2. XRD and EDAX studies reveal that the lowering of the contact resistance is due to the diffusion of P into the CdTe with the formation of a p+ layer. A model for this has also been presented in the text.

Thin-film solar cells: an overview

Abstract: Thin film solar cells (TFSC) are a promising approach for terrestrial and space photovoltaics and offer a wide variety of choices in terms of the device design and fabrication. A variety of substrates (flexible or rigid, metal or insulator) can be used for deposition of different layers (contact, buffer, absorber, reflector, etc.) using different techniques (PVD, CVD, ECD, plasma-based, hybrid, etc.). Such versatility allows tailoring and engineering of the layers in order to improve device performance. For large-area devices required for realistic applications, thin-film device fabrication becomes complex and requires proper control over the entire process sequence. Proper understanding of thin-film deposition processes can help in achieving high-efficiency devices over large areas, as has been demonstrated commercially for different cells. Research and development in new, exotic and simple materials and devices, and innovative, but simple manufacturing processes need to be pursued in a focussed manner. Which cell(s) and which technologies will ultimately succeed commercially continue to be anybody's guess, but it would surely be determined by the simplicity of manufacturability and the cost per reliable watt. Cheap and moderately efficient TFSC are expected to receive a due commercial place under the sun.

CuO Nanowires Can Be Synthesized by Heating Copper Substrates in Air

Abstract: This paper describes a vapor-phase approach to the facial synthesis of cupric oxide (CuO) nanowires supported on the surfaces of various copper substrates that include grids, foils, and wires. A typical procedure simply involved the thermal oxidation of these substrates in air and within the temperature range from 400 to 700 °C. Electron microscopic studies indicated that these nanowires had a controllable diameter in the range of 30−100 nm with lengths of up to 15 μm by varying the temperature and growth time. Electron diffraction and high-resolution TEM studies implied that each CuO nanowire was a bicrystal divided by a (111) twin plane in its middle along the longitudinal axis. A possible mechanism was also proposed to account for the growth of these CuO nanowires.

Copper oxide nanocrystals.

Abstract: It is well-known that inorganic nanocrystals are a benchmark model for nanotechnology, given that the tunability of optical properties and the stabilization of specific phases are uniquely possible at the nanoscale. Copper (I) oxide (Cu(2)O) is a metal oxide semiconductor with promising applications in solar energy conversion and catalysis. To understand the Cu/Cu(2)O/CuO system at the nanoscale, we have developed a method for preparing highly uniform monodisperse nanocrystals of Cu(2)O. The procedure also serves to demonstrate our development of a generalized method for the synthesis of transition metal oxide nanocrystals. Cu nanocrystals are initially formed and subsequently oxidized to form highly crystalline Cu(2)O. The volume change during phase transformation can induce crystal twinning. Absorption in the visible region of the spectrum gave evidence for the presence of a thin, epitaxial layer of CuO, which is blue-shifted, and appears to increase in energy as a function of decreasing particle size. XPS confirmed the thin layer of CuO, calculated to have a thickness of approximately 5 A. We note that the copper (I) oxide phase is surprisingly well-stabilized at this length scale.

Recent Advances in the Use of TiO2 Nanotube and Nanowire Arrays for Oxidative Photoelectrochemistry

Abstract: In this article, we present recent advances that we have achieved toward improving the properties of anodically formed semiconducting TiO2 nanotubes as well as nanowire arrays as electrodes for oxidative photoelectrochemistry. The morphology, crystallinity, composition, and illumination geometry of nanotube or nanowire arrays are critical factors in their performance as photoelectrodes. We discuss the key aspects relating to each factor and the advances achieved in improving each. With respect to the more fully investigated nanotube arrays, the ability to control the morphological parameters such as pore size, tube length, and wall thickness of the nanotube architecture has enabled high performance in applications such as water photoelectrolysis, photocatalysis, dye-sensitized solar cells, and heterojunction TiO2−polymer hybrid solar cells. We begin by reviewing the photoelectrochemical performance of state-of-the-art nanotube arrays fabricated on planar substrates. We then present more recent results rel...

Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

Abstract: The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.