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M. Maier

Bio: M. Maier is an academic researcher. The author has contributed to research in topics: Silicon carbide & Ion implantation. The author has an hindex of 2, co-authored 2 publications receiving 273 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, aluminum and boron implantation in 4H/6H SiC was investigated, and the degree of electrical activity of implanted Al/B atoms was determined as a function of the annealing temperature.
Abstract: Experimental studies on aluminum (Al) and boron (B) implantation in 4H/6H SiC are reported; the implantation is conducted at room temperature or elevated temperatures (500 to 700 C). Both Al and B act as ``shallow`` acceptors in SiC. The ionization energy of these acceptors, the hole mobility and the compensation in the implanted layers are obtained from Hall effect investigations. The degree of electrical activity of implanted Al/B atoms is determined as a function of the annealing temperature. Energetically deep centers introduced by the Al{sup +}/B{sup +} implantation are investigated. The redistribution of implanted Al/B atoms subsequent to anneals and extended lattice defects are monitored. The generation of the B-related D-center is studied by coimplantation of Si/B and C/B, respectively. (orig.) 60 refs.

271 citations


Cited by
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Journal ArticleDOI
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

750 citations

Journal ArticleDOI
TL;DR: In this article, the first planar high-voltage MOSFET's in 6H-SiC were reported, with a block mode operation of up to 760 V, which is nearly three times higher than previously reported operating voltages for SiC MOS FET's.
Abstract: We report on the first planar high-voltage MOSFET's in 6H-SiC. A double-implant MOS (DIMOS) process is used. The planar structure ameliorates the high-field stressing encountered by SiC UMOS transistors fabricated by other groups. Blocking mode operation of up to 760 V is demonstrated, which is nearly three times higher than previously reported operating voltages for SiC MOSFET's.

285 citations

Journal ArticleDOI
TL;DR: Key findings in single-photon generation from deep level defects in silicon carbide (SiC) are summarized and the significance of these individually addressable centers for emerging quantum applications is highlighted.
Abstract: This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

180 citations

Journal ArticleDOI
TL;DR: In this article, step-controlled epitaxy by using off-axis SiC {0001} substrates to grow high-quality epitaxial layer is explained in detail, which easily makes polytype replication of SiC at rather low temperatures.
Abstract: Technological breakthroughs in growth control of SiC are reviewed. Step-controlled epitaxy by using off-axis SiC {0001} substrates to grow high-quality epitaxial layer is explained in detail. The introduction of substrate off-angles brings step-flow growth, which easily makes polytype replication of SiC at rather low temperatures. Off-angle dependence, rate-determining processes, and temperature dependence of growth rate are discussed. Prediction, whether step-flow growth or two-dimensional nucleation does occur, is given as a function of off-angle, growth temperature, and growth rate. Optical and electrical properties of undoped epitaxial layers are characterized. Impurity doping during the growth is explained. Recent progresses in peripheral technologies for realization of power electronic devices, such as bulk growth, epitaxial growth, ion implantation, MOS interface, ohmic contacts, are introduced. Finally application to high-power electronic devices is briefly described.

167 citations

Journal ArticleDOI
TL;DR: In this paper, the effects of wet atmosphere during oxidation and anneal on thermally oxidized p-type and n-type MOS interface properties were systematically investigated for both 4H- and 6H-SiC.
Abstract: Effects of wet atmosphere during oxidation and anneal on thermally oxidized p-type and n-type MOS interface properties were systematically investigated for both 4H- and 6H-SiC. Deep interface states and fixed oxide charges were mainly discussed. The wet atmosphere was effective to reduce a negative flatband shift caused by deep donor-type interface states in p-type SiC MOS capacitors. Negative fixed charges, however, appeared near the interface during wet reoxidation anneal. In n-type SIC MOS capacitors, the flatband shift indicated a positive value when using wet atmosphere. The relation between interface properties and characteristics of n-channel planar 6H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) was also investigated. There was little relation between the interface properties of p-type MOS capacitors and the channel mobility of MOSFETs. The threshold voltage of MOSFETs processed by wet reoxidation anneal was higher than that of without reoxidation anneal. A clear relation between the threshold voltage and the channel mobility was observed in MOSFETs fabricated on the same substrate.

151 citations