In recent years, shape memory alloy (SMA) thin films have attracted significant attention from the scientific community and industry for their potential applications in the field of smart sensors and actuators, micro- and nano-electromechanical systems, aerospace, automobile, and biomedical. The present article focuses on the recent developments in the field of SMA thin films and their heterostructures with other materials for potential microelectromechanical systems (MEMS) applications. Various microdevices such as microgrippers, micropumps, microvalves, and cantilevers fabricated from binary and ternary SMA films have been discussed in detail. SMA thin films combined with various nitrides, oxides, and ferroelectric layers offer excellent surface modification and vibration damping at microscale for their use in harsh environments. The article encompasses the new paradigms in the field of SMA thin films that have been essentially developed by the authors and co-workers during the past 6 years.

Shape memory alloy thin films and heterostructures for MEMS applications: A review

Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application

Two contact resonance frequencies atomic force acoustic microscopy imaging technique has been used to evaluate local indentation modulus of a diamondlike carbon film deposited on a molybdenum foil by laser ablation from glassy carbon target. Acoustic images were obtained by measuring both first and second contact resonance frequency at each point of the scanned area, and then numerically evaluating local contact stiffness and reconstructing an indentation modulus bidimensional pattern. The wide difference of the indentation modulus values allows to detect the presence of residual glassy carbon agglomerates in the diamondlike carbon film.

Local indentation modulus characterization of diamondlike carbon films by atomic force acoustic microscopy two contact resonance frequencies imaging technique

The effect of annealing on the properties of diamond-like carbon protective antireflection coatings

Structural characterization of pulsed laser-deposited AlN thin films on semiconductor substrates

Nano-indentation studies of hard coatings prepared by laser ablation

Study of dielectric properties of laser processed BaTiO3 thin films on Si(100) with TiN buffer layer

Ferroelectric lead-zirconate-titanate (PZT) thin films were deposited by the pulsed laser deposition technique on Pt-coated (100) Si substrates. This study was focused on the investigation of the PZT film growth on (100) Si substrate at varying deposition parameters and electrical characterization of the films including hysteresis loop and fatigue properties by RT66A Standardized Ferroelectric Test System. PZT deposited at higher temperature (575°C in 450 mTorr O2 partial pressure) showed the best crystalline structure. The remnant polarization and the retained polarization of the ferroelectric capacitors were 13 µC/cm2 and 20 µC/cm2, respectively. The crystallographic properties of the films were determined using the x-ray diffractometer method. The cross-sectional transmission electron microscope results showed very smooth interfaces among different layers of films.

Synthesis of the PZT films deposited on pt-coated (100) Si substrates for nonvolatile memory applications

TiNi thin films with BaTiO3 and PbZr0.52Ti0.48O3 (PZT) as buffer layers were deposited on Si(100) substrates by the pulsed laser deposition (PLD) method. Buffer layers (BaTiO3 and PZT) were deposited at 600 °C in oxygen (O2) environment and TiNi films were deposited on the top of the buffer layer in presence of 15 mTorr nitrogen (N2) at various deposition temperatures (50, 300, and 500 °C). Synthesis and characterization of TiNi films were investigated from the crystallographic point of view by using X-ray diffractometer (XRD) and atomic force microscope (AFM) techniques. It is found that buffer layer of BaTiO3 and PZT have improved the crystallinity of TiNi films deposited at higher temperatures. The TiNi/PZT film was uniform compared to TiNi/BaTiO3 film with the exception of agglomerates that appeared throughout the layer.

Synthesis and characterization of laser ablated TiNi films

Pb(Zr x Ti 1-x )O 3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs) The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide La x Sr 1-x CoO 3 (lanthanum strontium cobalt oxide or LSCO) as electrodes The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated The PZT and LSCO films grown on Pt/(100)Si are polycrystalline The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400344499

M.R. Alam

Papers

Nano-indentation studies of hard coatings prepared by laser ablation

Study of dielectric properties of laser processed BaTiO3 thin films on Si(100) with TiN buffer layer

Synthesis of the PZT films deposited on pt-coated (100) Si substrates for nonvolatile memory applications

Synthesis and characterization of laser ablated TiNi films

Synthesis and Characterization of Ferroelectric Thin Films by KrF Excimer Laser Ablation for Memory Applications