M. R. Ibarra

Bio: M. R. Ibarra is an academic researcher from University of Zaragoza. The author has contributed to research in topics: Magnetization & Magnetic anisotropy. The author has an hindex of 60, co-authored 448 publications receiving 13724 citations. Previous affiliations of M. R. Ibarra include Spanish National Research Council & University of Southampton.

Evidence for magnetic polarons in the magnetoresistive perovskites

Abstract: Manganese perovskites based on the compound LaMnO3 are attracting considerable theoretical and technological interest by virtue of their unusual magnetic and electronic properties1–4. Most notable of these properties is the extremely large change in resistivity that accompanies the application of a magnetic field, an effect known as 'colossal' magnetoresistance. The origin of this effect has been attributed5–7 to the presence of magnetic polarons—charge carriers accompanied by a localized (and magnetically polarized) distortion of the surrounding crystal lattice8,9— but their existence and properties remains a matter of speculation. Here, using a combination of volume thermal expansion (with and without an applied field), magnetic susceptibility and small-angle neutron scattering measurements, we present evidence for the existence of magnetic polarons above the ferromagnetic ordering temperature, Tc. We detect the spontaneous formation of localized ∼12-A magnetic clusters above Tc which, on application of a magnetic field, grow in size but decrease in number. We argue that the response of these magnetic polarons to an applied magnetic field underlies the pronounced magnetoresistive properties in the compounds (La1–xAx)2/3Ca1/3MnO3 (where A is Y or Tb).

Double perovskites with ferromagnetism above room temperature

Abstract: We review the structural, magnetic and transport properties of double perovskites (A2BB'O6) with ferromagnetism above room temperature. Ferromagnetism in these compounds is explained by an indirect B?O?B'?O?B exchange interaction mediated by itinerant electrons. We first focus on the BB' =?FeMo-based double perovskites, with Sr2FeMoO6 (TC = 420?K) being the most studied compound. These compounds show metallic behaviour and low magnetic coercivity. Afterwards, we will focus on B' = Re compounds, where the significant orbital moment of Re plays a crucial role in the magnetic properties, for example in the large magnetic coercivity and magnetostructural coupling. More specifically, we first discuss the A2FeReO6 series, with maximum TC = 520?K for Ca2FeReO6, which shows a tendency to semiconducting behaviour. Finally, we describe the Sr2(Fe1?xCrx)ReO6 series, with maximum TC = 625?K for Sr2CrReO6, which is the highest TC in an oxide compound without Fe. This compound is metallic. We discuss the impact of these materials for spin electronics in the light of their high spin polarization at the Fermi level and metallicity. In particular, we focus on the large intergrain magnetoresistance effect observed in polycrystalline samples and the possible implementation of these materials as electrodes in magnetic tunnel junctions.

Influence of oxygen content on the structural, magnetotransport, and magnetic properties of LaMnO 3 + δ

Abstract: A systematic study of the effect of oxygen content on the structural, magnetotransport, and magnetic properties has been undertaken on a series of ${\mathrm{LaMnO}}_{3+\mathrm{\ensuremath{\delta}}}$ samples, with $\ensuremath{\delta}=0,$ 0.025, 0.07, 0.1, and 0.15. Measurements of the ac initial magnetic susceptibility, magnetization, magnetoresistance, and neutron diffraction, including small-angle neutron scattering (SANS), were performed in the temperature range 1--320 K using high magnetic fields up to 12 T. The antiferromagnetic order found in ${\mathrm{LaMnO}}_{3}$ evolves towards a ferromagnetic order as \ensuremath{\delta} increases. This behavior is accompanied by a drastic reduction of the static Jahn-Teller distortion of the ${\mathrm{MnO}}_{6}$ octahedra. The ferromagnetic coupling weakens for $\ensuremath{\delta}g~0.1.$ The magnetic behavior is interpreted by taking into account two effects caused by the increase in \ensuremath{\delta}: cation vacancies and ${\mathrm{Mn}}^{4+}{/\mathrm{M}\mathrm{n}}^{3+}$ ratio enhancement. The orthorhombic crystallographic structure becomes unstable at room temperature for $\ensuremath{\delta}g~0.1.$ The sample $\ensuremath{\delta}=0.1$ shows a structural transition from rhombohedral to orthorhombic below ${T}_{S}\ensuremath{\approx}300\mathrm{K}$ with a huge change in the cell volume. All the studied compounds were found to be insulating at low temperatures with no appreciable magnetoresistance, except for $\ensuremath{\delta}=0.15,$ in which we observed a large value for the magnetoresistance. The SANS results indicate that magnetic clustering effects are important below ${T}_{C}$ for $\ensuremath{\delta}g~0.07,$ which could explain the intriguing ferromagnetic insulator state. In the $\ensuremath{\delta}=0.07$ and $\ensuremath{\delta}=0.10$ samples we found at temperatures below ${T}_{C}$ magnetic and structural anomalies that are characteristic of charge ordering.

Magnetic-field-induced structural phase transition in Gd 5 ( S i 1.8 Ge 2.2 )

Abstract: We present direct evidence that the giant magnetocaloric effect recently discovered in the ${\mathrm{Gd}}_{5}{(\mathrm{S}\mathrm{i}}_{1.8}{\mathrm{Ge}}_{2.2})$ alloy is associated with a field-induced first-order structural transition from a ${P112}_{1}/a$ monoclinic (paramagnetic) to a Pnma orthorhombic (ferromagnetic) structure. A large volume contraction of $\ensuremath{\Delta}V/V\ensuremath{\cong}0.4%$ takes place spontaneously at the transition temperature, ${T}_{C}\ensuremath{\cong}240\mathrm{K}.$ The reported structural transition can be induced reversibly by application of an external magnetic field, producing strong magnetoelastic effects.

Recent developments in magnetocaloric materials

Abstract: The recent literature concerning the magnetocaloric effect (MCE) has been reviewed. The MCE properties have been compiled and correlations have been made comparing the behaviours of the different families of magnetic materials which exhibit large or unusual MCE values. These families include: the lanthanide (R) Laves phases (RM2, where M = Al, Co and Ni), Gd5(Si1−xGex)4 ,M n(As1−xSbx), MnFe(P1−xAsx), La(Fe13−xSix) and their hydrides and the manganites (R1−xMxMnO3, where R = lanthanide and M = Ca, Sr and Ba). The potential for use of these materials in magnetic refrigeration is discussed, including a comparison with Gd as a near room temperature active magnetic regenerator material. (Some figures in this article are in colour only in the electronic version)

Anomalous hall effect

Abstract: We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical work, both playing a crucial role, has been at the heart of these advances. On the theoretical front, the adoption of Berry-phase concepts has established a link between the AHE and the topological nature of the Hall currents which originate from spin-orbit coupling. On the experimental front, new experimental studies of the AHE in transition metals, transition-metal oxides, spinels, pyrochlores, and metallic dilute magnetic semiconductors, have more clearly established systematic trends. These two developments in concert with first-principles electronic structure calculations, strongly favor the dominance of an intrinsic Berry-phase-related AHE mechanism in metallic ferromagnets with moderate conductivity. The intrinsic AHE can be expressed in terms of Berry-phase curvatures and it is therefore an intrinsic quantum mechanical property of a perfect cyrstal. An extrinsic mechanism, skew scattering from disorder, tends to dominate the AHE in highly conductive ferromagnets. We review the full modern semiclassical treatment of the AHE together with the more rigorous quantum-mechanical treatments based on the Kubo and Keldysh formalisms, taking into account multiband effects, and demonstrate the equivalence of all three linear response theories in the metallic regime. Finally we discuss outstanding issues and avenues for future investigation.

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Abstract: The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs)1,2 is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices3,4,5. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studied for device applications, exhibit a magnetoresistance ratio up to 70% at room temperature6. This low magnetoresistance seriously limits the feasibility of spintronics devices. Here, we report a giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs. The origin of this enormous TMR effect is coherent spin-polarized tunnelling, where the symmetry of electron wave functions plays an important role. Moreover, we observed that their tunnel magnetoresistance oscillates as a function of tunnel barrier thickness, indicating that coherency of wave functions is conserved across the tunnel barrier. The coherent TMR effect is a key to making spintronic devices with novel quantum-mechanical functions, and to developing gigabit-scale MRAM.

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

Abstract: Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM). The performance of these devices is currently limited by the modest (< approximately 70%) room-temperature tunnelling magnetoresistance (TMR) of technologically relevant MTJs. Much higher TMR values have been theoretically predicted for perfectly ordered (100) oriented single-crystalline Fe/MgO/Fe MTJs. Here we show that sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented (100) MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to approximately 220% at room temperature and approximately 300% at low temperatures. Consistent with these high TMR values, superconducting tunnelling spectroscopy experiments indicate that the tunnelling current has a very high spin polarization of approximately 85%, which rivals that previously observed only using half-metallic ferromagnets. Such high values of spin polarization and TMR in readily manufactureable and highly thermally stable devices (up to 400 degrees C) will accelerate the development of new families of spintronic devices.