M Rabel

Bio: M Rabel is an academic researcher. The author has contributed to research in topics: Magnetic field & Paramagnetism. The author has an hindex of 1, co-authored 1 publications receiving 21 citations.

Hall coefficient of thin films in a mean free path model

Abstract: Defining an effective relaxation time and then using the Boltzmann transport equation, analytical expressions have been derived, in the case of nearly specular scattering on external surfaces (p>or=0.5), for the Hall coefficient and conductivity in thin metallic films subjected to a transverse magnetic field. The results for moderately high magnetic field agree well with previous theoretical works; at low magnetic field the Hall coefficient in thin films is greater than the bulk value RH0 and becomes identical with RH0 in strong magnetic field. The theoretical predictions agree well with experimental data on copper and potassium thin films.

Theoretical analysis of the Hall effect in thin polycrystalline metallic films

Abstract: In polycrystalline films where three types of scattering processes (background, grainboundaries and external surfaces scatterings) are taking place at the same time an effective relaxation time is defined in the light of a three-dimensional model of grain-boundaries. Analytical expressions for the Hall coefficient and conductivity in thin polycrystalline metallic films subjected to a transverse magnetic field are then derived by using the Boltzmann transport equation. Previously published data can be theoretically interpreted in terms of the proposed model.

Hall coefficient of thin polycrystalline metallic films in a three-dimensional scattering model

Abstract: A three-dimensional grain boundary model can be used to calculate the transport properties of fine-grained films where background and grain boundaries scattering processes occur simultaneously. In the absence of a magnetic field a total relaxation time which is related to the grain size D and to the transmission coefficient t of electrons through grain boundaries is defined. Using the Boltzmann transport equation analytical expressions are easily derived for the Hall coefficient and conductivity in polycrystalline films subjected to a transverse magnetic field. The Hall coefficient is independent of both the grain parameters and the strength of the magnetic field whereas the film resistivity depends markedly on the grain size D and the transmission coefficient t. Some experimental data on polycrystalline films can be interpreted on the basis of these theoretical predictions.

Theoretical analysis of the transverse Hall effect in thin monocrystalline films

Abstract: The transverse Hall coefficient of thin monocrystalline filmsRHF is derived from the recently presented bidimensional conduction model by introducing a term in the Boltzmann equation representing the effective mean free path. Numerical evaluations ofRHF show that the size effect inRHF is less marked than that in resistivity and is much more sensitive to grain-boundary scattering than it is to external-surface scattering. Good agreement with the results from the previous experiments of several authors is found.

Relation between the metal film resistivity, its temperature coefficient of resistivity and its Hall coefficient in a grain boundary conduction model

Abstract: Starting from the three-dimensional model for grain boundary conductivity theoretical expressions for the conductivity, its TCR and the Hall coefficient are derived. In the limit of a small magnetic field the relative grain boundary Hall coefficient is approximately equal to the product of the relative grain boundary conductivity and the relative TCR.