Author
M. Radhakrishnan
Other affiliations: Bharathiar University
Bio: M. Radhakrishnan is an academic researcher from University of Madras. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 8, co-authored 17 publications receiving 198 citations. Previous affiliations of M. Radhakrishnan include Bharathiar University.
Topics: Thin film, Dielectric, Temperature coefficient, Capacitance, Capacitor
Papers
More filters
TL;DR: In this paper, the dielectric properties of thin film capacitors of lanthanum oxide were studied over the frequency range 0.5-30 kHz at various temperatures (300-530 K).
51 citations
TL;DR: In this article, the dielectric properties of LaF3 films have been studied in the audio-frequency range (0.1-30 kHz) at different temperatures (300- 490 K).
26 citations
TL;DR: In this article, the authors measured the defect density and activation energy of an annealed polycrystalline polysilicon film of thickness 270-1670 A. The defect density F 0 (E ) max varies considerably from 21.4 to 5.25 μΩ cm eV -1 in the thickness range of 270 -1670
22 citations
TL;DR: In this paper, the dielectric properties of thermally evaporated TbF 3 thin film capacitors (Al/TbF3 /Al) of various thicknesses were studied in the frequency range 0.5-30 kHz at various temperatures (300-443 K).
21 citations
TL;DR: In this paper, the aging and annealing studies of the titanium oxide capacitors have been made, and the dependence of the capacitance and dielectric loss on frequency and temperature have been discussed.
Abstract: Titanium oxide thin films have been deposited by an ion plating technique under rf glow. The structure of the deposited film has been found to be amorphous and the composition has been analysed by IR spectrum. Aging and annealing studies of the titanium oxide capacitors have been made. The dielectric constant of the film at 1 kHz has been estimated to be 12.4. The dependence of the capacitance and dielectric loss on frequency and temperature have been studied, and the results are discussed. The temperature coefficient of the capacitance has also been calculated.
20 citations
Cited by
More filters
TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
2,553 citations
295 citations
TL;DR: In this article, Lanthanum oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 180-425°C on soda-lime glass and Si(1-0-0) substrates using a β-diketonate type precursor La(thd) 3 and ozone.
237 citations
TL;DR: In this paper, the effects of post-treatment through N2 or O2 plasma on the electrical properties of as-deposited TiO2 films were evaluated, and it was shown that electrical properties could be enhanced by O 2 plasma treatment.
171 citations
TL;DR: In this paper, a tetragonal structure of TeO2 nanowires was used to construct a gas sensor with low power consumption for NO2, NH3, and H2S gas sensing.
Abstract: Tellurium dioxide (TeO2) nanowires with a tetragonal structure have been grown by thermally evaporating tellurium metal at 400°C in air. The nanowires produced have diameters ranging from 30to200nm and have lengths of several tens of micrometers. Gas sensors were fabricated using the obtained TeO2 nanowires. The sensing behavior to NO2, NH3, and H2S gases at room temperature showed typical characteristics of a p-type semiconductor. The results demonstrate the potential to develop TeO2 nanowire based gas sensors with low power consumption.
117 citations