Author
M. S. Dresselhaus
Bio: M. S. Dresselhaus is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Seebeck coefficient & Thermoelectric effect. The author has an hindex of 11, co-authored 11 publications receiving 382 citations.
Papers
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TL;DR: In PbSe epitaxial thin films grown by thermal evaporation on KCl(001) substrates and covered with an EuS protective layer, oscillatory dependences of the galvanomagnetic and thermoelectric properties (electrical conductivity σ, the Hall coefficient RH, charge carrier mobility μ, and the Seebeck coefficient S) were observed at room temperature as mentioned in this paper.
Abstract: In PbSe epitaxial thin films grown by thermal evaporation on KCl(001) substrates and covered with an EuS protective layer, oscillatory dependences of the galvanomagnetic and thermoelectric properties (electrical conductivity σ, the Hall coefficient RH, charge carrier mobility μ, and the Seebeck coefficient S) on the PbSe layer thickness d (3
70 citations
TL;DR: In this paper, the authors report on the thickness d dependences of the Seebeck coefficient, electrical conductivity, and Hall coefficient of PbTe and PbS epitaxial thin films (d=5-200nm), prepared by thermal evaporation in vacuum and deposition on (001) KCl substrates.
Abstract: We report on the thickness d dependences of the Seebeck coefficient, electrical conductivity, and Hall coefficient of PbTe and PbS epitaxial thin films (d=5–200 nm), prepared by thermal evaporation in vacuum and deposition on (001) KCl substrates. The oxidation of the films in air at 300 K leads to a sign inversion of the carrier type from n to p in films with d⩽125 and 110 nm for PbTe and PbS, respectively. The observed d dependences are interpreted in terms of compensating acceptor states created by oxygen on the film surface.
63 citations
TL;DR: In this paper, the authors attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.
Abstract: Oscillatory thickness dependences of the electrical conductivity, Hall coefficient, charge carrier mobility, and Seebeck coefficient were obtained at room temperature for n-type thin Bi films (d=3–300 nm) fabricated by the thermal evaporation of a bismuth crystal in a vacuum and deposition on mica substrates at 380 K. We attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.
62 citations
TL;DR: In this paper, the dependence of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2-200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature.
Abstract: Oscillatory behaviour was detected in the dependences of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2–200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature. The non-monotonic character of these dependences is attributed to quantum size effects, which manifest themselves in PbTe QWs at sufficiently small values of d. The positions of the extrema in the thickness dependences of the transport properties shift with changing electron concentration in PbTe QWs.
44 citations
TL;DR: In this article, a non-monotonic dependence of the thermoelectric properties of PbS epitaxial films grown on (001)KCl substrates and covered with an EuS protective layer was detected at room temperature.
31 citations
Cited by
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TL;DR: It is theoretically predicted that two-dimensional bismuth will show the quantum spin-Hall effect, both by calculating the helical edge states, and by showing the nontriviality of the Z2 topological number.
Abstract: We show that the spin-Hall conductivity in insulators is related to a magnetic susceptibility representing the strength of the spin-orbit coupling. We use this relationship as a guiding principle to search real materials showing quantum spin-Hall effect. As a result, we theoretically predict that two-dimensional bismuth will show the quantum spin-Hall effect, both by calculating the helical edge states, and by showing the nontriviality of the ${Z}_{2}$ topological number, and propose possible experiments.
525 citations
TL;DR: In this paper, the physical and chemical properties of various thermoelectric materials are reviewed and strategies for improving the performance of materials are proposed, along with an insight into semiconductor physics.
499 citations
TL;DR: In this article, the authors introduce the theory behind thermoelectric materials and details the predicted and demonstrated enhancements of ZT in nanoscale and nanostructured thermocomponent materials, including thin films and superlattices, nanowires and nanotubes.
Abstract: Thermoelectric materials can be used for solid state power generation and heating/cooling applications. The figure of merit of thermoelectric materials, ZT, which determines their efficiency in a thermoelectric device, remains low for most conventional bulk materials. Nanoscale and nanostructured thermoelectric materials are promising for increasing ZT relative to the bulk. This review introduces the theory behind thermoelectric materials and details the predicted and demonstrated enhancements of ZT in nanoscale and nanostructured thermoelectric materials. We discuss thin films and superlattices, nanowires and nanotubes, and nanocomposites, providing a ZT comparison among various families of nanocomposite materials. We provide some perspectives regarding the origin of enhanced ZT in nanoscale and nanostructured materials and suggest some promising and fruitful research directions for achieving high ZT materials for practical applications.
346 citations
TL;DR: It is demonstrated that thermopower of PbSe nanocrystal solids can be tailored by charge-transfer doping and increases monotonically as the Nanocrystal size decreases due to changes in carrier concentration.
Abstract: We examine the effect of strong three-dimensional quantum confinement on the thermopower and electrical conductivity of PbSe nanocrystal superlattices. We show that for comparable carrier concentrations PbSe nanocrystal superlattices exhibit a substantial thermopower enhancement of several hundred microvolts per Kelvin relative to bulk PbSe. We also find that thermopower increases monotonically as the nanocrystal size decreases due to changes in carrier concentration. Lastly, we demonstrate that thermopower of PbSe nanocrystal solids can be tailored by charge-transfer doping.
262 citations